Yi‐Ting Tseng

767 citations

42 papers · 640 · h-index 16

Impact in

Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials
Cellular and Molecular Neuroscience top 10%
- Neuroscience and Neural Engineering
- Photoreceptor and optogenetics research

Papers in

Electrical and Electronic Engineering 31
- Advanced Memory and Neural Computing 27
- Ferroelectric and Negative Capacitance Devices 22
- Semiconductor materials and devices 13
Polymers and Plastics 12
- Transition Metal Oxide Nanomaterials 11

Co-authors: Ting‐Chang Chang (31 shared papers)Simon M. Sze (16 shared papers)Kuan‐Chang Chang (12 shared papers)Tsung‐Ming Tsai (18 shared papers)Chih‐Cheng Shih (14 shared papers)Min-Chen Chen (11 shared papers)Po‐Hsun Chen (12 shared papers)Chih‐Yang Lin (8 shared papers)
Journals: IEEE Electron Device Letters (9 papers)Journal of Physics D Applied Physics (4 papers)Applied Physics Express (4 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)
Partner nations: Taiwan China United States

In The Last Decade

Yi‐Ting Tseng

39 papers receiving 633 citations

Peers

Countries citing papers authored by Yi‐Ting Tseng

Since Specialization

Citations

This map shows the geographic impact of Yi‐Ting Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yi‐Ting Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yi‐Ting Tseng more than expected).

Fields of papers citing papers by Yi‐Ting Tseng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yi‐Ting Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yi‐Ting Tseng. The network helps show where Yi‐Ting Tseng may publish in the future.

Co-authors

The 25 scholars most cited alongside Yi‐Ting Tseng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yi‐Ting Tseng Line = papers co-authored together Yi‐Ting Tseng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment Nanoscale Research Letters ·Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih, Yi‐Ting Tseng, Ting‐Chang Chang, Kuan‐Chang Chang, Minghui Wang, Wen‐Chung Chen, (unknown), Huaqiang Wu, He Qian, Simon M. Sze	2017	62
2	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode Nanoscale ·Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Shengdong Zhang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Yi‐Ting Tseng, Yao‐Feng Chang, Ying‐Chen Chen, Hui‐Chun Huang, Simon M. Sze	2017	58
3	Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory Applied Physics Letters ·Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang, Chih‐Cheng Shih, Kuan‐Chang Chang, Rui Zhang, Kai-Huang Chen, Jung‐Hui Chen, Yu-Chiuan Li, Chih‐Yang Lin, Ya-Chi Hung, Yong-En Syu, Jin‐Cheng Zheng, Simon M. Sze	2015	51
4	Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory IEEE Electron Device Letters ·Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Rui Zhang, Kuan-Hsien Liu, Hua-Mao Chen, Yi‐Ting Tseng, Ya-Chi Hung, Yong-En Syu, Jin‐Cheng Zheng, Ying-Lang Wang, Wei Zhang, Simon M. Sze	2015	42
5	Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory IEEE Electron Device Letters ·Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang, Rui Zhang, Tong Wang, Chih-Hung Pan, Kai-Huang Chen, Hua-Mao Chen, Min-Chen Chen, Yi‐Ting Tseng, Po‐Hsun Chen, Ikai Lo, Jin‐Cheng Zheng, Jen-Chung Lou, Simon M. Sze	2016	36
6	The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector IEEE Transactions on Electron Devices ·Chun-Kuei Chen, Chih‐Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Chih‐Cheng Shih, Yi‐Ting Tseng, (unknown), Ying‐Chen Chen, Yao‐Feng Chang, Chun-Chu Lin, Hui‐Chun Huang, Wei‐Chen Huang, Hao Wang, Simon M. Sze	2018	31
7	Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory ACS Applied Materials & Interfaces ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Chih‐Yang Lin, Yi‐Ting Tseng, Hui‐Chun Huang, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze	2017	31
8	Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory Applied Physics Letters ·Yi‐Ting Tseng, I-Chieh Chen, Ting‐Chang Chang, J.C. Huang, Chih‐Cheng Shih, (unknown), Wen‐Chung Chen, Minghui Wang, Wei‐Chen Huang, Min-Chen Chen, Xiaohua Ma, Yue Hao, Simon M. Sze	2018	31
9	Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid IEEE Electron Device Letters ·Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Rui Zhang, Kai-Huang Chen, Jung‐Hui Chen, Min-Chen Chen, Hui‐Chun Huang, Wei Zhang, Chih‐Yang Lin, Yi‐Ting Tseng, Hua-Ching Lin, Jin‐Cheng Zheng, Simon M. Sze	2015	25
10	Forecasting the seasonal pollen index by using a hidden Markov model combining meteorological and biological factors The Science of The Total Environment ·Yi‐Ting Tseng, Shigeto Kawashima, Satoshi Kobayashi, Shinji Takeuchi, Kimihito Nakamura	2019	24
11	Algorithm for forecasting the total amount of airborne birch pollen from meteorological conditions of previous years Agricultural and Forest Meteorology ·Yi‐Ting Tseng, Shigeto Kawashima, Satoshi Kobayashi, Shinji Takeuchi, Kimihito Nakamura	2017	22
12	Ultra-Low Switching Voltage Induced by Inserting SiO₂Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory IEEE Electron Device Letters ·Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Tian-Jian Chu, Yi‐Ting Tseng, Cheng-Hsien Wu, Wan-Ching Su, Min-Chen Chen, Hui‐Chun Huang, Minghui Wang, Jung‐Hui Chen, Jin‐Cheng Zheng, Simon M. Sze	2016	21
13	Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure Advanced Electronic Materials ·Yi‐Ting Tseng, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih‐Cheng Shih, Hui‐Chun Huang, Cheng‐Chi Yang, Chih‐Yang Lin, Cheng‐Hsien Wu, (unknown), Shengdong Zhang, Simon M. Sze	2017	20
14	Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory IEEE Electron Device Letters ·(unknown), Ting‐Chang Chang, Kan‐Hao Xue, Yu‐Ting Su, Cheng-Hsien Wu, Chih‐Cheng Shih, Yi‐Ting Tseng, Wen‐Chung Chen, Wei‐Chen Huang, Chun-Kuei Chen, Xiangshui Miao, Simon M. Sze	2018	19
15	Investigation on the current conduction mechanism of HfZrO _x ferroelectric memory Journal of Physics D Applied Physics ·Wen‐Chung Chen, Yong‐Ci Zhang, Po‐Hsun Chen, Yi‐Ting Tseng, Cheng-Hsien Wu, Chih-Cheng Yang, Peiyu Wu, Yung‐Fang Tan, Shih‐Kai Lin, Wei‐Chen Huang, Hui‐Chun Huang, Tsung‐Ming Tsai, Ting‐Chang Chang	2020	18
16	Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO₂/TiN Resistive Random Access Memory IEEE Electron Device Letters ·Kuan‐Ju Zhou, Ting‐Chang Chang, Chih‐Yang Lin, Chun-Kuei Chen, Yi‐Ting Tseng, (unknown), Hong-Chih Chen, Li-Chuan Sun, Chih-Ying Lien, Yung‐Fang Tan, Chung‐Wei Wu, Yu‐Hsuan Yeh, Simon M. Sze	2019	16
17	A high-speed MIM resistive memory cell with an inherent vanadium selector Applied Materials Today ·Chih-Yang Lin, Yi‐Ting Tseng, Po‐Hsun Chen, Ting‐Chang Chang, Jason K. Eshraghian, Qiwen Wang, Qi Lin, Yung‐Fang Tan, Mao‐Chou Tai, Wei‐Chun Hung, Hui‐Chun Huang, Wei Lü, Simon M. Sze	2020	15
18	Complementary resistive switching behavior for conductive bridge random access memory Applied Physics Express ·(unknown), Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih‐Cheng Shih, Rui Zhang, Kai-Huang Chen, Minghui Wang, Jin‐Cheng Zheng, Ikai Lo, Cheng-Hsien Wu, Yi‐Ting Tseng, Simon M. Sze	2016	11
19	Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory IEEE Transactions on Electron Devices ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Chih‐Cheng Shih, Cheng-Hsien Wu, Cheng‐Chi Yang, Yu‐Ting Su, Chih‐Yang Lin, Yi‐Ting Tseng, Min-Chen Chen, Ruey‐Chi Wang, Ching‐Chich Leu, Kai-Huang Chen, Ikai Lo, Jin‐Cheng Zheng, Simon M. Sze	2016	10
20	The influence of temperature on set voltage for different high resistance state in 1T1R devices Applied Physics Express ·Yung‐Fang Tan, Yu‐Ting Su, Min-Chen Chen, Ting‐Chang Chang, Tsung‐Ming Tsai, Yi‐Ting Tseng, Chih-Cheng Yang, (unknown), Wen‐Chung Chen, Chun-Chu Lin, Xiaohua Ma, Hao Yue, Simon M. Sze	2019	10

About Yi‐Ting Tseng

Yi‐Ting Tseng is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, Immunology and Allergy and Cellular and Molecular Neuroscience, having authored 42 papers that have together received 640 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (27 papers), Ferroelectric and Negative Capacitance Devices (22 papers), Semiconductor materials and devices (13 papers), Transition Metal Oxide Nanomaterials (11 papers), Electronic and Structural Properties of Oxides (6 papers), Allergic Rhinitis and Sensitization (4 papers), Animal Ecology and Behavior Studies (3 papers) and Neuroscience and Neural Engineering (3 papers). The work is most often cited by research in Polymers and Plastics (156 citations), Cellular and Molecular Neuroscience (180 citations), Electrical and Electronic Engineering (561 citations), Immunology and Allergy (36 citations) and Materials Chemistry (120 citations). Yi‐Ting Tseng has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Ting‐Chang Chang, Simon M. Sze, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih‐Cheng Shih, Min-Chen Chen, Po‐Hsun Chen, Chih‐Yang Lin, Wen‐Chung Chen and Shigeto Kawashima. Their work appears in journals such as IEEE Electron Device Letters, Journal of Physics D Applied Physics, Applied Physics Express, IEEE Transactions on Electron Devices and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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