Chih-Hung Pan

984 citations

38 papers · 840 · h-index 17

Impact in

Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials
Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 37
- Advanced Memory and Neural Computing 37
- Ferroelectric and Negative Capacitance Devices 29
- Semiconductor materials and devices 12
- Gas Sensing Nanomaterials and Sensors 1
Polymers and Plastics 15
- Transition Metal Oxide Nanomaterials 15

Co-authors: Kuan‐Chang Chang (33 shared papers)Tsung‐Ming Tsai (32 shared papers)Ting‐Chang Chang (34 shared papers)Min-Chen Chen (21 shared papers)Simon M. Sze (21 shared papers)Tian-Jian Chu (15 shared papers)Chih‐Cheng Shih (13 shared papers)Po‐Hsun Chen (19 shared papers)
Journals: IEEE Electron Device Letters (10 papers)Applied Physics Express (6 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)Nanoscale Research Letters (2 papers)
Partner nations: Taiwan China United States

In The Last Decade

Chih-Hung Pan

37 papers receiving 827 citations

Peers

Countries citing papers authored by Chih-Hung Pan

Since Specialization

Citations

This map shows the geographic impact of Chih-Hung Pan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chih-Hung Pan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chih-Hung Pan more than expected).

Fields of papers citing papers by Chih-Hung Pan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chih-Hung Pan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chih-Hung Pan. The network helps show where Chih-Hung Pan may publish in the future.

Co-authors

The 25 scholars most cited alongside Chih-Hung Pan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Chih-Hung Pan Line = papers co-authored together Chih-Hung Pan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Physical and chemical mechanisms in oxide-based resistance random access memory Nanoscale Research Letters ·Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Yao‐Feng Chang, Min-Chen Chen, Tian-Jian Chu, Hsin-Lu Chen, Chih-Hung Pan, Chih‐Cheng Shih, Jin‐Cheng Zheng, Simon M. Sze	2015	128
2	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode Nanoscale ·Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Shengdong Zhang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Yi‐Ting Tseng, Yao‐Feng Chang, Ying‐Chen Chen, Hui‐Chun Huang, Simon M. Sze	2017	58
3	Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices IEEE Electron Device Letters ·Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang, Tsung‐Ming Tsai, J. C. Lou, Jung‐Hui Chen, Tai-Fa Young, Min-Chen Chen, Ya‐Liang Yang, Yin-Chih Pan, Geng-Wei Chang, Tian-Jian Chu, Chih‐Cheng Shih, Jianyu Chen, Chih-Hung Pan, Yu‐Ting Su, Yong-En Syu, Ya‐Hsiang Tai, Simon M. Sze	2013	55
4	Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO₂-Based Resistive Random Access Memory IEEE Electron Device Letters ·Po‐Hsun Chen, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Tian-Jian Chu, Min-Chen Chen, Hui‐Chun Huang, Ikai Lo, Jin‐Cheng Zheng, Simon M. Sze	2016	51
5	Characteristics of hafnium oxide resistance random access memory with different setting compliance current Applied Physics Letters ·Yu‐Ting Su, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Rui Zhang, J. C. Lou, Jung‐Hui Chen, Tai-Fa Young, Kai-Huang Chen, Bae‐Heng Tseng, Chih‐Cheng Shih, Ya‐Liang Yang, Min-Chen Chen, Tian-Jian Chu, Chih-Hung Pan, Yong-En Syu, Simon M. Sze	2013	44
6	Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO₂ fluid treatment IEEE Electron Device Letters ·Kuan‐Chang Chang, Tian-Jian Chu, Jianyu Chen, Yu-Ting Su, Jingwei Jiang, Kai-Huang Chen, Hui‐Chun Huang, Yong-En Syu, Dershin Gan, Simon M. Sze, Chih-Hung Pan, Tsung‐Ming Tsai, Rui Zhang, Jen-Chung Lou, Tai-Fa Young, Jung‐Hui Chen, Chih-Cheng Shih	2013	42
7	Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory IEEE Electron Device Letters ·Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Rui Zhang, Kuan-Hsien Liu, Hua-Mao Chen, Yi‐Ting Tseng, Ya-Chi Hung, Yong-En Syu, Jin‐Cheng Zheng, Ying-Lang Wang, Wei Zhang, Simon M. Sze	2015	42
8	Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device IEEE Electron Device Letters ·Yong-En Syu, Rui Zhang, Ting‐Chang Chang, Tsung‐Ming Tsai, Kuan‐Chang Chang, Jen-Chung Lou, Tai-Fa Young, Jung‐Hui Chen, Min-Chen Chen, Ya‐Liang Yang, Chih‐Cheng Shih, Tian-Jian Chu, Jianyu Chen, Chih-Hung Pan, Yu‐Ting Su, Hui‐Chun Huang, Dershin Gan, Simon M. Sze	2013	42
9	Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory IEEE Electron Device Letters ·Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang, Rui Zhang, Tong Wang, Chih-Hung Pan, Kai-Huang Chen, Hua-Mao Chen, Min-Chen Chen, Yi‐Ting Tseng, Po‐Hsun Chen, Ikai Lo, Jin‐Cheng Zheng, Jen-Chung Lou, Simon M. Sze	2016	35
10	Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory ACS Applied Materials & Interfaces ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Chih‐Yang Lin, Yi‐Ting Tseng, Hui‐Chun Huang, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze	2017	31
11	Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO₂-Based Resistive Random Access Memory IEEE Electron Device Letters ·Po‐Hsun Chen, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Chih‐Yang Lin, Fu‐Yuan Jin, Min-Chen Chen, Hui‐Chun Huang, Minghui Wang, Ikai Lo, Jin‐Cheng Zheng, Simon M. Sze	2016	28
12	Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory Applied Physics Letters ·Tian-Jian Chu, Tsung‐Ming Tsai, Ting‐Chang Chang, Kuan‐Chang Chang, Chih-Hung Pan, Kai-Huang Chen, Jung‐Hui Chen, Hsin-Lu Chen, Hui‐Chun Huang, Chih‐Cheng Shih, Yong-En Syu, Jin‐Cheng Zheng, Simon M. Sze	2014	27
13	Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation RSC Advances ·Cong Ye, Jiaji Wu, Chih-Hung Pan, Tsung‐Ming Tsai, Kuan‐Chang Chang, Huaqiang Wu, Ning Deng, He Qian	2017	25
14	Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence Applied Physics Letters ·Chih-Hung Pan, Ting‐Chang Chang, Tsung‐Ming Tsai, Kuan‐Chang Chang, Po‐Hsun Chen, Shi-Wang Chang-Chien, Min-Chen Chen, Hui‐Chun Huang, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze	2016	23
15	Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications Applied Surface Science ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Chih‐Cheng Shih, Cheng-Hsien Wu, Chih-Cheng Yang, Wen‐Chung Chen, Jiun-Chiu Lin, Minghui Wang, Haimei Zheng, Min-Chen Chen, Simon M. Sze	2017	19
16	Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM IEEE Electron Device Letters ·Cheng-Hsien Wu, Shih‐Kai Lin, Chih-Hung Pan, Po‐Hsun Chen, Wenyan Lin, Ting‐Chang Chang, Tsung‐Ming Tsai, Youlin Xu, Chih‐Cheng Shih, Yu-Shuo Lin, Wen‐Chung Chen, Minghui Wang, Shengdong Zhang, Simon M. Sze	2018	18
17	High performance of graphene oxide-doped silicon oxide-based resistance random access memory Nanoscale Research Letters ·Rui Zhang, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Jung‐Hui Chen, Tai-Fa Young, Chih‐Cheng Shih, Ya‐Liang Yang, Yin-Chih Pan, Tian-Jian Chu, Syuan-Yong Huang, Chih-Hung Pan, Yu‐Ting Su, Yong-En Syu, Simon M. Sze	2013	18
18	Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode IEEE Transactions on Electron Devices ·Chih-Hung Pan, Ting‐Chang Chang, Tsung‐Ming Tsai, Kuan‐Chang Chang, Tian-Jian Chu, Chih‐Cheng Shih, Chih‐Yang Lin, Po‐Hsun Chen, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze	2016	16
19	High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang, Tsung‐Ming Tsai, Tian-Jian Chu, Hsin-Lu Chen, Chih‐Cheng Shih, Chih-Hung Pan, Yu‐Ting Su, Pei-Jung Wu, Simon M. Sze	2014	15
20	Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH₃ Treatment IEEE Electron Device Letters ·Ji Chen, Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Rui Zhang, Jen-Chung Lou, Tian-Jian Chu, Cheng-Hsien Wu, Min-Chen Chen, Ya-Chi Hung, Yong-En Syu, Jin‐Cheng Zheng, Simon M. Sze	2015	13

About Chih-Hung Pan

Chih-Hung Pan is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, Cellular and Molecular Neuroscience and Health, Toxicology and Mutagenesis, having authored 38 papers that have together received 840 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (37 papers), Ferroelectric and Negative Capacitance Devices (29 papers), Transition Metal Oxide Nanomaterials (15 papers), Semiconductor materials and devices (12 papers), Electronic and Structural Properties of Oxides (11 papers), Neuroscience and Neural Engineering (3 papers), ZnO doping and properties (1 paper) and Gas Sensing Nanomaterials and Sensors (1 paper). The work is most often cited by research in Polymers and Plastics (276 citations), Electrical and Electronic Engineering (816 citations), Cellular and Molecular Neuroscience (205 citations), Materials Chemistry (197 citations) and Bioengineering (13 citations). Chih-Hung Pan has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Min-Chen Chen, Simon M. Sze, Tian-Jian Chu, Chih‐Cheng Shih, Po‐Hsun Chen, Jin‐Cheng Zheng and Yong-En Syu. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Express, Applied Physics Letters, IEEE Transactions on Electron Devices and Nanoscale Research Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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