X. Ni

1.3k citations

62 papers · 1.1k · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 61
- GaN-based semiconductor devices and materials 61
Materials Chemistry 29
- ZnO doping and properties 27

Co-authors: H. Morkoç̌ (49 shared papers)Ü. Özgür (31 shared papers)H. Morkoç (12 shared papers)A. A. Baski (10 shared papers)Y. Fu (11 shared papers)Necmi Bıyıklı (7 shared papers)Y. T. Moon (5 shared papers)M. Wu (16 shared papers)
Journals: Applied Physics Letters (17 papers)Journal of Applied Physics (8 papers)Journal of Crystal Growth (5 papers)physica status solidi (a) (4 papers)Superlattices and Microstructures (2 papers)
Partner nations: United States China Lithuania

In The Last Decade

X. Ni

59 papers receiving 1.1k citations

Peers

Countries citing papers authored by X. Ni

Since Specialization

Citations

This map shows the geographic impact of X. Ni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Ni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Ni more than expected).

Fields of papers citing papers by X. Ni

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Ni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Ni. The network helps show where X. Ni may publish in the future.

Co-authors

The 25 scholars most cited alongside X. Ni, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with X. Ni Line = papers co-authored together X. Ni links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 62 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Optimization of a-plane GaN growth by MOCVD on r-plane sapphire Journal of Crystal Growth ·X. Ni, Y. Fu, Y. T. Moon, Necmi Bıyıklı, H. Morkoç̌	2006	124
2	InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes Applied Physics Letters ·X. Ni, Xin‐Ge Li, J. Lee, Seosi Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans	2010	81
3	Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition Applied Physics Letters ·X. Ni, Ü. Özgür, A. A. Baski, H. Morkoç, Lin Zhou, David J. Smith, C. A. Tran	2007	79
4	Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy Applied Physics Letters ·Serguei Chevtchenko, X. Ni, Q. Fan, A. A. Baski, H. Morkoç̌	2006	58
5	Study of SiNx and SiO2 passivation of GaN surfaces Journal of Applied Physics ·Serguei Chevtchenko, M. A. Reshchikov, Qi Fan, X. Ni, Y. T. Moon, A. A. Baski, H. Morkoç̌	2007	54
6	Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes Applied Physics Letters ·Xianbo LI, X. Ni, Joon Chok Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans	2009	53
7	Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth Applied Physics Letters ·X. Ni, Ümit Özgür, Yang Ming Fu, Necmi Bıyıklı, Jinqiao Xie, A. A. Baski, H. Morkoç, Z. Liliental‐Weber	2006	51
8	Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them Journal of Applied Physics ·X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ümit Özgür, H. Morkoç̌, A. Matulionis	2010	51
9	Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork Applied Physics Letters ·Jinqiao Xie, Ü. Özgür, Y. Fu, X. Ni, H. Morkoç̌, C. K. Inoki, T. S. Kuan, John V. Foreman, Henry O. Everitt	2007	49
10	On carrier spillover in c- and m-plane InGaN light emitting diodes Applied Physics Letters ·J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans	2009	40
11	Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition Applied Physics Letters ·X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, H. Morkoç	2009	34
12	Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers Applied Physics Letters ·Jun Xie, Jacob H. Leach, X. Ni, M. Wu, Rintaro Shimada, Ü. Özgür, H. Morkoç	2007	34
13	Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, Çağlıyan Kurdak	2009	31
14	Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency Superlattices and Microstructures ·X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ümit Özgür, H. Morkoç̌	2010	30
15	Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition Journal of Applied Physics ·X. Ni, Ü. Özgür, H. Morkoç̌, Z. Liliental‐Weber, Henry O. Everitt	2007	26
16	Ballistic transport in InGaN-based LEDs: impact on efficiency Semiconductor Science and Technology ·Ü. Özgür, X. Ni, X Li, J Lee, S. Liu, Serdal Okur, V. Avrutin, A. Matulionis, H. Morkoç̌	2010	25
17	Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates Applied Physics Letters ·Jacob H. Leach, Congyong Zhu, M. Wu, X. Ni, X. Li, Jinqiao Xie, Ümit Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, Edward A. Preble, K. R. Evans	2010	21
18	Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN Applied Physics Letters ·X. Ni, J. Lee, M. Wu, X. Li, Rintaro Shimada, Ümit Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K. R. Evans	2009	20
19	Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels Applied Physics Letters ·A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, E. Šermukšnis, Jacob H. Leach, M. Wu, X. Ni, X. Li, H. Morkoç̌	2009	20
20	The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes physica status solidi (RRL) - Rapid Research Letters ·X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç̌, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans	2010	19

About X. Ni

X. Ni is a scholar working on Condensed Matter Physics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Electrical and Electronic Engineering, having authored 62 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (61 papers), Ga2O3 and related materials (28 papers), ZnO doping and properties (27 papers), Metal and Thin Film Mechanics (19 papers), Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (15 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Acoustic Wave Resonator Technologies (4 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (477 citations), Atomic and Molecular Physics, and Optics (430 citations), Materials Chemistry (539 citations) and Mechanics of Materials (209 citations). X. Ni has collaborated with scholars based in United States, China and Lithuania. Frequent co-authors include H. Morkoç̌, Ü. Özgür, H. Morkoç, A. A. Baski, Y. Fu, Necmi Bıyıklı, Y. T. Moon, M. Wu, Ümit Özgür and V. Avrutin. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, physica status solidi (a) and Superlattices and Microstructures.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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