Karol Čičo

701 citations

26 papers · 634 · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Electrical and Electronic Engineering 7
- Semiconductor materials and devices 6
- Advanced Memory and Neural Computing 1

Co-authors: Dagmar Gregušová (13 shared papers)Roman Stoklas (7 shared papers)Karol Fröhlich (18 shared papers)Peter Kordos (6 shared papers)Jan Kuzmik (14 shared papers)N. Grandjean (13 shared papers)Dionyz Pogany (11 shared papers)J.‐F. Carlin (11 shared papers)
Journals: IEEE Electron Device Letters (3 papers)Applied Physics Letters (3 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)Semiconductor Science and Technology (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Slovakia Austria Switzerland

In The Last Decade

Karol Čičo

26 papers receiving 620 citations

Peers

Countries citing papers authored by Karol Čičo

Since Specialization

Citations

This map shows the geographic impact of Karol Čičo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karol Čičo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karol Čičo more than expected).

Fields of papers citing papers by Karol Čičo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karol Čičo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karol Čičo. The network helps show where Karol Čičo may publish in the future.

Co-authors

The 25 scholars most cited alongside Karol Čičo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Karol Čičo Line = papers co-authored together Karol Čičo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor Applied Physics Letters ·Peter Kordos, Dagmar Gregušová, Roman Stoklas, Karol Čičo, Jozef Novak	2007	75
2	Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·Gianmauro Pozzovivo, Jan Kuzmik, Sebastian Golka, Werner Schrenk, G. Strasser, Dionyz Pogany, Karol Čičo, M. Ťapajna	2007	69
3	AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide Semiconductor Science and Technology ·Dagmar Gregušová, Roman Stoklas, Karol Čičo, T. Lalinský, Peter Kordos	2007	64
4	Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation IEEE Electron Device Letters ·Clemens Ostermaier, Gianmauro Pozzovivo, J.‐F. Carlin, Bernhard Basnar, Werner Schrenk, Y. Douvry, Christophe Gaquière, J.C. DeJaeger	2009	58
5	Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures Semiconductor Science and Technology ·M. Ťapajna, Karol Čičo, Jan Kuzmik, Dionyz Pogany, Gianmauro Pozzovivo, G. Strasser, N. Grandjean, Karol Fröhlich +1 other	2009	41
6	Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·M. Ťapajna, Nicole Killat, Vassil Palankovski, Dagmar Gregušová, Karol Čičo, J.‐F. Carlin, N. Grandjean, Martin Kuball	2014	39
7	Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region IEEE Electron Device Letters ·Michal Jurkovič, Dagmar Gregušová, Vassil Palankovski, Štefan Haščík, Michal Blaho, Karol Čičo, Karol Fröhlich, J.‐F. Carlin	2013	36
8	RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$ IEEE Electron Device Letters ·Peter Kordos, M. Mikulics, Dagmar Gregušová, Karol Čičo, J.‐F. Carlin, N. Grandjean, Jozef Novak, Karol Fröhlich +1 other	2010	34
9	Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier IEEE Transactions on Electron Devices ·Jan Kuzmik, Clemens Ostermaier, Gianmauro Pozzovivo, Bernhard Basnar, Werner Schrenk, J.‐F. Carlin, Marcus Gonschorek, Eric Feltin	2010	32
10	Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Karol Čičo, Kristina Husekova, M. Ťapajna, Dagmar Gregušová, Roman Stoklas, Jan Kuzmik, J.‐F. Carlin, N. Grandjean	2011	32
11	Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition Materials Science in Semiconductor Processing ·Karol Fröhlich, R. Lupták, Edmund Dobročka, Kristina Husekova, Karol Čičo, Alica Rosova, Mindaugas Lukosius, A. Abrutis	2006	21
12	Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Solid-State Electronics ·Karol Čičo, Dagmar Gregušová, Jan Kuzmik, Michal Jurkovič, Alexander Alexewicz, M.A. Poisson, Dionyz Pogany, G. Strasser	2011	17
13	Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition Applied Physics Letters ·Peter Kordos, Róbert Kúdela, Roman Stoklas, Karol Čičo, M. Mikulics, Dagmar Gregušová, Jozef Novak	2012	17
14	Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures Microelectronics Reliability ·Karol Čičo, Jan Kuzmik, Dagmar Gregušová, Roman Stoklas, T. Lalinský, A. Georgakilas, Dionyz Pogany, Karol Fröhlich	2007	16
15	Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures Japanese Journal of Applied Physics ·M. Ťapajna, Jan Kuzmik, Karol Čičo, Dionyz Pogany, Gianmauro Pozzovivo, G. Strasser, S. Abermann, E. Bertagnolli	2009	14
16	Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al2O3 gate insulation grown by CVD Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Gianmauro Pozzovivo, Jan Kuzmik, Sebastian Golka, Karol Čičo, Karol Fröhlich, J.‐F. Carlin, Marcus Gonschorek, N. Grandjean	2008	13
17	Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Dagmar Gregušová, Roman Stoklas, Karol Čičo, Gero Heidelberger, M. Marso, Jozef Novak, Peter Kordos	2007	11
18	In Al N ∕ Ga N metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Karol Čičo, Jan Kuzmik, Jozef Liday, Kristina Husekova, Gianmauro Pozzovivo, J.‐F. Carlin, N. Grandjean, Dionyz Pogany	2009	10
19	InAlN/GaN heterostructures for microwave power and beyond Technical digest - International Electron Devices Meeting/Technical digest ·E. Kohn, M. Alomari, Andrej Denisenko, Michele Dipalo, David Maier, Farid Medjdoub, Carsten Pietzka, S.L. Delage	2009	7
20	Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Karol Čičo, Dagmar Gregušová, J. Šoltýs, Jan Kuzmik, J.‐F. Carlin, N. Grandjean, Dionyz Pogany, Karol Fröhlich +1 other	2009	7

About Karol Čičo

Karol Čičo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 26 papers that have together received 634 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (6 papers), Advanced Memory and Neural Computing (1 paper) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Condensed Matter Physics (535 citations), Electrical and Electronic Engineering (136 citations), Atomic and Molecular Physics, and Optics (21 citations), Electronic, Optical and Magnetic Materials (8 citations) and Materials Chemistry (19 citations). Karol Čičo has collaborated with scholars based in Slovakia, Austria and Switzerland. Frequent co-authors include Dagmar Gregušová, Roman Stoklas, Karol Fröhlich, Peter Kordos, Jan Kuzmik, N. Grandjean, Dionyz Pogany, J.‐F. Carlin, Jozef Novak and G. Strasser. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Semiconductor Science and Technology and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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