N. E. B. Cowern

2.2k citations

105 papers · 1.9k · h-index 25

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor materials and interfaces
- Atomic and Molecular Physics
Computational Mechanics top 2%
- Ion-surface interactions and analysis

Papers in

Atomic and Molecular Physics, and Optics 79
- Semiconductor materials and interfaces 54
- Atomic and Molecular Physics 23
Electrical and Electronic Engineering 75
- Silicon and Solar Cell Technologies 72
- Integrated Circuits and Semiconductor Failure Analysis 28
- Semiconductor materials and devices 12

Co-authors: D. J. Gravesteijn (5 shared papers)C.J. Sofield (21 shared papers)H.F.F. Jos (1 shared paper)K.T.F. Janssen (1 shared paper)P. C. Zalm (4 shared papers)W.B. de Boer (4 shared papers)G. F. A. van de Walle (2 shared papers)P. van der Sluis (1 shared paper)
Journals: Applied Physics Letters (16 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (13 papers)Journal of Applied Physics (6 papers)Physical Review Letters (4 papers)Materials Science and Engineering B (3 papers)
Partner nations: United Kingdom Netherlands France

In The Last Decade

N. E. B. Cowern

102 papers receiving 1.8k citations

Peers

Countries citing papers authored by N. E. B. Cowern

Since Specialization

Citations

This map shows the geographic impact of N. E. B. Cowern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. E. B. Cowern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. E. B. Cowern more than expected).

Fields of papers citing papers by N. E. B. Cowern

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. E. B. Cowern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. E. B. Cowern. The network helps show where N. E. B. Cowern may publish in the future.

Co-authors

The 25 scholars most cited alongside N. E. B. Cowern, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. E. B. Cowern Line = papers co-authored together N. E. B. Cowern links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 105 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Diffusion in strained Si(Ge) Physical Review Letters ·N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, W.B. de Boer	1994	211
2	Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles Journal of Applied Physics ·N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos	1990	179
3	Experiments on atomic-scale mechanisms of diffusion Physical Review Letters ·N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn, C. J. Vriezema	1991	115
4	A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon Journal of Applied Physics ·C.J. Ortiz, P. Pichler, Tim Fühner, (unknown), B. Colombeau, N. E. B. Cowern, A. Claverie	2004	64
5	Boron uphill diffusion during ultrashallow junction formation Applied Physics Letters ·Ray Duffy, V. C. Venezia, A. Heringa, T. W. T. Hüsken, M. Hopstaken, N. E. B. Cowern, Peter B. Griffin, Chenhao Wang	2003	61
6	Reactions of point defects and dopant atoms in silicon Physical Review Letters ·N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, D. J. Oostra	1992	56
7	Role of C and B clusters in transient diffusion of B in silicon Applied Physics Letters ·N. E. B. Cowern, A. Cacciato, J. S. Custer, F.W. Saris, W. Vandervorst	1996	54
8	Interstitial traps and diffusion in epitaxial silicon films Applied Physics Letters ·N. E. B. Cowern	1994	50
9	Transient enhanced diffusion in preamorphized silicon: the role of the surface Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·N. E. B. Cowern, Daniel Alquier, M. Omri, A. Claverie, A. Nejim	1999	44
10	Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon Applied Physics Letters ·Giovanni Mannino, N. E. B. Cowern, F. Roozeboom, J. G. M. van Berkum	2000	41
11	Charge-changing energy loss, higher-orderZ1dependence, and pre-equilibrium behavior in the stopping power for energetic ions in solids Physical review. A, General physics ·N. E. B. Cowern, P.M. Read, C.J. Sofield, L.B. Bridwell, M W Lucas	1984	41
12	On the optimization of SiGe-base bipolar transistors IEEE Transactions on Electron Devices ·R.J.E. Hueting, J.W. Slotboom, A. Pruijmboom, W.B. de Boer, C.E. Timmering, N. E. B. Cowern	1996	39
13	Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans Applied Physics Letters ·J. A. Sharp, N. E. B. Cowern, R.P. Webb, K.J. Kirkby, D. Giubertoni, S. Gennaro, M. Bersani, M.A. Foad, F. Cristiano, Pier‐Francesco Fazzini	2006	35
14	Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions MRS Proceedings ·B. Colombeau, Andrew J. Smith, N. E. B. Cowern, Bartek Pawlak, F. Cristiano, Ray Duffy, A. Claverie, C.J. Ortiz, P. Pichler, E. Lampin, Christoph Zechner	2004	35
15	Extended Point Defects in Crystalline Materials: Ge and Si Physical Review Letters ·N. E. B. Cowern, S. I. Simdyankin, Chi Young Ahn, Nick S. Bennett, Jonathan P. Goss, Jean‐Michel Hartmann, A. Pakfar, Silke Hamm, J. Valentin, E. Napolitani, D. De Salvador, E. Bruno, S. Mirabella	2013	34
16	Boride-enhanced diffusion in silicon: Bulk and surface layers Applied Physics Letters ·N. E. B. Cowern, M. J. J. Theunissen, F. Roozeboom, J. G. M. van Berkum	1999	33
17	Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth Applied Physics Letters ·Bartek Pawlak, Wilfried Vandervorst, A. J. Smith, N. E. B. Cowern, B. Colombeau, Xavier Llimona i Pagès	2005	32
18	Charge-exchange effects in the energy-loss straggling ofO16ions in Al Physical review. A, General physics ·C.J. Sofield, N. E. B. Cowern, R.J. Petty, J.M. Freeman, James Mason	1978	29
19	Comparison of charge-changing cross sections in gaseous and solid targets Journal of Physics B Atomic and Molecular Physics ·Clifton Woods, C.J. Sofield, N. E. B. Cowern, M. P. Murrell, J. E. Draper	1984	29
20	Dislocation formation and B transient diffusion in C coimplanted Si Journal of Applied Physics ·A. Cacciato, J.G.E. Klappe, N. E. B. Cowern, W. Vandervost, László Péter Biró, J. S. Custer, F. W. Saris	1996	28

About N. E. B. Cowern

N. E. B. Cowern is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Computational Mechanics, Materials Chemistry and Radiation, having authored 105 papers that have together received 1.9k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (72 papers), Semiconductor materials and interfaces (54 papers), Ion-surface interactions and analysis (29 papers), Integrated Circuits and Semiconductor Failure Analysis (28 papers), Atomic and Molecular Physics (23 papers), Silicon Nanostructures and Photoluminescence (13 papers), Semiconductor materials and devices (12 papers) and X-ray Spectroscopy and Fluorescence Analysis (11 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.1k citations), Computational Mechanics (546 citations), Electrical and Electronic Engineering (1.5k citations), Radiation (172 citations) and Surfaces, Coatings and Films (80 citations). N. E. B. Cowern has collaborated with scholars based in United Kingdom, Netherlands and France. Frequent co-authors include D. J. Gravesteijn, C.J. Sofield, H.F.F. Jos, K.T.F. Janssen, P. C. Zalm, W.B. de Boer, G. F. A. van de Walle, P. van der Sluis, J.M. Freeman and A. Claverie. Their work appears in journals such as Applied Physics Letters, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics, Physical Review Letters and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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N. E. B. Cowern

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