Mark Doczy

3.1k citations

22 papers · 2.5k · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
Biomedical Engineering top 5%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 18
- Advancements in Semiconductor Devices and Circuit Design 17
- Semiconductor materials and devices 17
- Integrated Circuits and Semiconductor Failure Analysis 4
- Ferroelectric and Negative Capacitance Devices 3
- Silicon Carbide Semiconductor Technologies 2
Biomedical Engineering 9
- Nanowire Synthesis and Applications 7

Co-authors: J. Kavalieros (17 shared papers)Suman Datta (15 shared papers)Robert S. Chau (16 shared papers)Barry M. Doyle (10 shared papers)M. Metz (10 shared papers)Ben Jin (10 shared papers)M. Radosavljević (6 shared papers)B.S. Doyle (5 shared papers)
Journals: IEEE Electron Device Letters (2 papers)Microelectronic Engineering (1 paper)ACS Nano (1 paper)Journal of Applied Physics (1 paper)IEEE Transactions on Nanotechnology (1 paper)
Partner nations: United States United Kingdom India

In The Last Decade

Mark Doczy

21 papers receiving 2.3k citations

Mark Doczy's Hit Papers

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Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications 2005 · 542 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2005 IEEE Transactions on Nanotechnology

Peers

Countries citing papers authored by Mark Doczy

Since Specialization

Citations

This map shows the geographic impact of Mark Doczy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark Doczy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark Doczy more than expected).

Fields of papers citing papers by Mark Doczy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark Doczy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark Doczy. The network helps show where Mark Doczy may publish in the future.

Co-authors

The 25 scholars most cited alongside Mark Doczy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mark Doczy Line = papers co-authored together Mark Doczy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications IEEE Transactions on Nanotechnology ·Suman Datta, Mark Doczy, Barry M. Doyle, J. Kavalieros, A. Majumdar, M. Radosavljević +3 others Hit paper breakdown →	2005	542
2	High- $kappa$ /Metal–Gate Stack and Its MOSFET Characteristics IEEE Electron Device Letters ·Robert S. Chau, Suman Datta, Mark Doczy, Barry M. Doyle, J. Kavalieros, M. Metz	2004	407
3	High performance fully-depleted tri-gate CMOS transistors IEEE Electron Device Letters ·B.S. Doyle, Suman Datta, Mark Doczy, Scott A. Hareland, Ben Jin, J. Kavalieros, T. Linton, Anand Murthy	2003	342
4	Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering J. Kavalieros, Barry M. Doyle, Suman Datta, Gilbert Dewey, Mark Doczy, Ben Jin, D. Lionberger, M. Metz	2006	188
5	Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout Barry M. Doyle, Boyan I. Boyanov, Suman Datta, Mark Doczy, Scott A. Hareland, Ben Jin, J. Kavalieros, T. Linton	2004	167
6	Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology Microelectronic Engineering ·Robert S. Chau, J.K. Brask, Suman Datta, Gilbert Dewey, Mark Doczy, B.S. Doyle, J. Kavalieros, Ben Jin	2005	116
7	CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films ACS Nano ·Michael Ramon, Aparna Gupta, Chris M. Corbet, Domingo A. Ferrer, Hema C. P. Movva, Gary D. Carpenter, Luigi Colombo, George I. Bourianoff	2011	104
8	85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications ORCA Online Research @Cardiff (Cardiff University) ·Suman Datta, Tim Ashley, J.K. Brask, Louise Buckle, Mark Doczy, M. T. Emeny, D.G. Hayes, K.P. Hilton	2006	102
9	Experimental demonstration of the coexistence of spin Hall and Rashba effects in β−tantalum/ferromagnet bilayers Physical Review B ·Gary A. Allen, Sasikanth Manipatruni, Dmitri E. Nikonov, Mark Doczy, Ian A. Young	2015	88
10	A 50 nm depleted-substrate CMOS transistor (DST) Robert S. Chau, J. Kavalieros, Barry M. Doyle, Anand Murthy, N. Paulsen, D. Lionberger, Douglas W. Barlage, Reza Arghavani	2002	78
11	High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack Suman Datta, Gilbert Dewey, Mark Doczy, B.S. Doyle, Ben Jin, J. Kavalieros, R. Kotlyar, M. Metz	2004	69
12	Advanced Depleted-Substrate Transistors: Single-gate, Double-gate and Tri-gate Robert S. Chau, B.S. Doyle, J. Kavalieros, Doug William Barlage, Anand Murthy, Mark Doczy, Reza Arghavani, Suman Datta	2002	56
13	Gate dielectric scaling for high-performance CMOS: from SiO2 to high-K Robert S. Chau, Suman Datta, Mark Doczy, J. Kavalieros, M. Metz	2003	50
14	Silicon nano-transistors and breaking the 10 nm physical gate length barrier Robert S. Chau, Barry M. Doyle, Mark Doczy, Suman Datta, Scott A. Hareland, Ben Jin, J. Kavalieros, M. Metz	2004	41
15	Silicon nano-transistors for logic applications Physica E Low-dimensional Systems and Nanostructures ·Robert S. Chau, Boyan I. Boyanov, B.S. Doyle, Mark Doczy, Suman Datta, Scott A. Hareland, Ben Jin, J. Kavalieros	2003	38
16	High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics Douglas W. Barlage, Reza Arghavani, Gilbert Dewey, Mark Doczy, Barry M. Doyle, J. Kavalieros, Anand Murthy, Brian E. Roberds	2002	33
17	Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications Robert S. Chau, Mark Doczy, Barry M. Doyle, Suman Datta, Gilbert Dewey, J. Kavalieros, Ben Jin, M. Metz	2004	13
18	Emerging silicon and non-silicon nanoelectronic devices: opportunities and challenges for future high-performance and low-power computational applications (invited paper) Robert S. Chau, J.K. Brask, S. Davita, Gilbert Dewey, Mark Doczy, Barry M. Doyle, J. Kavalieros, Ben Jin	2005	12
19	Advanced si and sige strained channel NMOS and PMOS transistors with high-k/metal-gate stack Suman Datta, J.K. Brask, Gilbert Dewey, Mark Doczy, Barry M. Doyle, Ben Jin, J. Kavalieros, M. Metz	2004	11
20	Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets Journal of Applied Physics ·Domingo A. Ferrer, Samaresh Guchhait, Huanhuan Liu, Fahmida Ferdousi, Chris M. Corbet, Hongyi Xu, Mark Doczy, George I. Bourianoff	2011	10

About Mark Doczy

Mark Doczy is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Philosophy, having authored 22 papers that have together received 2.5k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and devices (17 papers), Nanowire Synthesis and Applications (7 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Quantum and electron transport phenomena (2 papers), Silicon Carbide Semiconductor Technologies (2 papers) and Magnetic properties of thin films (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.2k citations), Biomedical Engineering (711 citations), Atomic and Molecular Physics, and Optics (418 citations), Materials Chemistry (528 citations) and Electronic, Optical and Magnetic Materials (112 citations). Mark Doczy has collaborated with scholars based in United States, United Kingdom and India. Frequent co-authors include J. Kavalieros, Suman Datta, Robert S. Chau, Barry M. Doyle, M. Metz, Ben Jin, M. Radosavljević, B.S. Doyle, A. Majumdar and Scott A. Hareland. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, ACS Nano, Journal of Applied Physics and IEEE Transactions on Nanotechnology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Mark Doczy's Hit Papers

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