Gilbert Dewey

2.5k citations

32 papers · 2k · h-index 22

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- 3D IC and TSV technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 31
- Advancements in Semiconductor Devices and Circuit Design 27
- Semiconductor materials and devices 6
- 3D IC and TSV technologies 4
Atomic and Molecular Physics, and Optics 2
- Semiconductor Quantum Structures and Devices 2

Co-authors: Robert S. Chau (20 shared papers)M. Radosavljević (19 shared papers)J. Kavalieros (17 shared papers)M. Metz (14 shared papers)Willy Rachmady (9 shared papers)B. Chu-Kung (9 shared papers)R. Pillarisetty (9 shared papers)Joel M. Fastenau (7 shared papers)
Journals: IEEE Electron Device Letters (2 papers)Microelectronic Engineering (1 paper)Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting (1 paper)Technical digest - International Electron Devices Meeting/Technical digest (20 papers)IEEE International Reliability Physics Symposium proceedings (2 papers)
Partner nations: United States United Kingdom

In The Last Decade

Gilbert Dewey

32 papers receiving 2k citations

Peers

Countries citing papers authored by Gilbert Dewey

Since Specialization

Citations

This map shows the geographic impact of Gilbert Dewey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gilbert Dewey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gilbert Dewey more than expected).

Fields of papers citing papers by Gilbert Dewey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gilbert Dewey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gilbert Dewey. The network helps show where Gilbert Dewey may publish in the future.

Co-authors

The 25 scholars most cited alongside Gilbert Dewey, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Gilbert Dewey Line = papers co-authored together Gilbert Dewey links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing Technical digest - International Electron Devices Meeting/Technical digest ·Gilbert Dewey, B. Chu-Kung, J. Boardman, Joel M. Fastenau, J. Kavalieros, R. Kotlyar, W. K. Liu, Dmitri Lubyshev	2011	295
2	Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering Symposium on VLSI Technology ·J. Kavalieros, Suman Datta, Gilbert Dewey, Mark Doczy, Ben Jin, D. Lionberger, M. Metz, Willy Rachmady	2006	188
3	BTI reliability of 45 nm high-K + metal-gate process technology IEEE International Reliability Physics Symposium proceedings ·Sangwoo Pae, M. Agostinelli, Mark Brazier, Robert S. Chau, Gilbert Dewey, Tahir Ghani, M. Hattendorf, Jeffrey Hicks	2008	120
4	Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation Technical digest - International Electron Devices Meeting/Technical digest ·M. Radosavljević, Gilbert Dewey, J. Boardman, B. Chu-Kung, Joel M. Fastenau, Sanaz Kabehie, J. Kavalieros, W. K. Liu	2011	120
5	Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology Microelectronic Engineering ·Robert S. Chau, J.K. Brask, Suman Datta, Gilbert Dewey, Mark Doczy, Brian S. Doyle, J. Kavalieros, Ben Jin	2005	117
6	Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications Technical digest - International Electron Devices Meeting/Technical digest ·M. Radosavljević, B. Chu-Kung, Sean F. Corcoran, Gilbert Dewey, Mantu Kumar Hudait, Joel M. Fastenau, J. Kavalieros, W. K. Liu	2009	115
7	3-D Self-aligned Stacked NMOS-on-PMOS Nanoribbon Transistors for Continued Moore’s Law Scaling Technical digest - International Electron Devices Meeting/Technical digest ·ChingYao Huang, Gilbert Dewey, Ehren Mannebach, P. Morrow, Willy Rachmady, I‐Cheng Tung, Nicole K. Thomas, Urusa S. Alaan	2020	94
8	30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays Technical digest - International Electron Devices Meeting/Technical digest ·Robert S. Chau, J. Kavalieros, Brian E. Roberds, Richard E. Schenker, D. Lionberger, Douglas W. Barlage, Reza Arghavani, Anand Murthy	2002	88
9	High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications Technical digest - International Electron Devices Meeting/Technical digest ·M. Radosavljević, Tim Ashley, A. D. Andreev, S. D. Coomber, Gilbert Dewey, M. T. Emeny, M. Fearn, D.G. Hayes	2008	85
10	High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture Technical digest - International Electron Devices Meeting/Technical digest ·R. Pillarisetty, B. Chu-Kung, Sean F. Corcoran, Gilbert Dewey, J. Kavalieros, Harold W. Kennel, R. Kotlyar, D. Lionberger	2010	85
11	Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications Technical digest - International Electron Devices Meeting/Technical digest ·M. Radosavljević, Gilbert Dewey, Joel M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu, Dmitri Lubyshev	2010	80
12	Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate IEEE Electron Device Letters ·Suman Datta, Gilbert Dewey, Joel M. Fastenau, Mantu Kumar Hudait, Dmitri Loubychev, W. K. Liu, M. Radosavljević, Willy Rachmady	2007	73
13	High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack Technical digest - International Electron Devices Meeting/Technical digest ·Suman Datta, Gilbert Dewey, Mark Doczy, Brian S. Doyle, Ben Jin, J. Kavalieros, R. Kotlyar, M. Metz	2004	69
14	300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications Technical digest - International Electron Devices Meeting/Technical digest ·Willy Rachmady, Ankur Kumar Agrawal, Gilbert Dewey, Siddharth Chouksey, B. Chu-Kung, Giselle A. Elbaz, Paul B. Fischer, ChingYao Huang	2019	68
15	Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications Technical digest - International Electron Devices Meeting/Technical digest ·Mantu Kumar Hudait, Gilbert Dewey, Suman Datta, Joel M. Fastenau, J. Kavalieros, W. K. Liu, Dmitri Lubyshev, R. Pillarisetty	2007	62
16	Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications IEEE Electron Device Letters ·Gilbert Dewey, Mantu Kumar Hudait, Kangho Lee, R. Pillarisetty, Willy Rachmady, M. Radosavljević, Titash Rakshit, Robert S. Chau	2008	58
17	III–V field effect transistors for future ultra-low power applications Symposium on VLSI Technology ·Gilbert Dewey, B. Chu-Kung, R. Kotlyar, M. Metz, M. Radosavljević +1 other	2012	43
18	Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET Technical digest - International Electron Devices Meeting/Technical digest ·Uygar E. Avci, B. Chu-Kung, Ashish Agrawal, Gilbert Dewey, Rafael Rios, Daniel H. Morris, Sayed Hasan, R. Kotlyar	2015	37
19	High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics Technical digest - International Electron Devices Meeting/Technical digest ·Douglas W. Barlage, Reza Arghavani, Gilbert Dewey, Mark Doczy, J. Kavalieros, Anand Murthy, Brian E. Roberds, P. Stokley	2002	33
20	MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications Technical digest - International Electron Devices Meeting/Technical digest ·J. Boardman, B. Chu-Kung, Gilbert Dewey, A. Eisenbach, Joel M. Fastenau, J. Kavalieros, W. K. Liu, Dmitri Lubyshev	2011	25

About Gilbert Dewey

Gilbert Dewey is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 32 papers that have together received 2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (27 papers), Semiconductor materials and devices (6 papers), 3D IC and TSV technologies (4 papers), Semiconductor Quantum Structures and Devices (2 papers) and GaN-based semiconductor devices and materials (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Atomic and Molecular Physics, and Optics (180 citations), Hardware and Architecture (26 citations), Condensed Matter Physics (37 citations) and Materials Chemistry (109 citations). Gilbert Dewey has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include Robert S. Chau, M. Radosavljević, J. Kavalieros, M. Metz, Willy Rachmady, B. Chu-Kung, R. Pillarisetty, Joel M. Fastenau, W. K. Liu and Suman Datta. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting, Technical digest - International Electron Devices Meeting/Technical digest and IEEE International Reliability Physics Symposium proceedings.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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