M. Smith

2.0k citations

69 papers · 1.4k · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 31
- Semiconductor materials and devices 15
- Silicon and Solar Cell Technologies 9
- Silicon Carbide Semiconductor Technologies 9
Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 20

Co-authors: H. X. Jiang (23 shared papers)J. Y. Lin (22 shared papers)G. D. Chen (9 shared papers)M. Asif Khan (8 shared papers)C. J. Sun (6 shared papers)A. Salvador (7 shared papers)A. Botchkarev (6 shared papers)M. Voelskow (11 shared papers)
Journals: Applied Physics Letters (17 papers)Fusion Engineering and Design (9 papers)Fusion Science & Technology (5 papers)Journal of Applied Physics (5 papers)IEEE Transactions on Plasma Science (3 papers)
Partner nations: United States United Kingdom Germany

In The Last Decade

M. Smith

60 papers receiving 1.3k citations

Peers

Countries citing papers authored by M. Smith

Since Specialization

Citations

This map shows the geographic impact of M. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Smith more than expected).

Fields of papers citing papers by M. Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Smith. The network helps show where M. Smith may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Smith, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Smith Line = papers co-authored together M. Smith links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 69 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fundamental optical transitions in GaN Applied Physics Letters ·G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, Su‐Huai Wei, M. Asif Khan, C. J. Sun	1996	155
2	Mechanisms of band-edge emission in Mg-doped p-type GaN Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç, B. Goldenberg	1996	108
3	4H–SiC photoconductive switching devices for use in high-power applications Applied Physics Letters ·S. Doğan, Ali Teke, Daming Huang, H. Morkoç̌, Carson Roberts, J. Parish, B. N. Ganguly, M. Smith, Robert E. Myers, Stephen E. Saddow	2003	96
4	Time-resolved photoluminescence studies of InGaN epilayers Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, Q. Chen	1996	90
5	Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures Applied Physics Letters ·M. E. Aumer, S. F. LeBoeuf, S. M. Bedair, M. Smith, J. Y. Lin, H. X. Jiang	2000	87
6	Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes Applied Physics Letters ·C. J. Sun, M. Zubair Anwar, Qihui Chen, Jinhong Yang, M. Asif Khan, M. S. Shur, Alexei Bykhovski, Z. Liliental‐Weber, C. Kisielowski, M. Smith, J. Y. Lin, H. X. Jiang	1997	76
7	Excitonic recombination in GaN grown by molecular beam epitaxy Applied Physics Letters ·M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. K. Kim, Özgür Aktaş, A. Botchkarev, H. Morkoç̌	1995	65
8	Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass Journal of Crystal Growth ·M. Smith, Richard McMahon, M. Voelskow, D. Panknin, W. Skorupa	2005	60
9	Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy Applied Physics Letters ·M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, W. Kim, H. Morkoç	1996	53
10	Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells Applied Physics Letters ·M. Smith, J. Y. Lin, H. X. Jiang, Ali Hossain Khan, Q. Chen, A. Salvador, A. Botchkarev, W. Kim, H. Morkoç̌	1997	50
11	Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions Applied Physics Letters ·M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan	1997	50
12	Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition Applied Physics Letters ·G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun	1995	49
13	Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics ·G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarv, H. Morkoç̌	1996	45
14	Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition Journal of Applied Physics ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun, Q. Chen, Jinwei Yang	1996	44
15	Flash-lamp annealing of semiconductor materials—Applications and process models Vacuum ·Richard McMahon, M. Smith, Keith A. Seffen, M. Voelskow, W. Anwand, W. Skorupa	2007	40
16	Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures Journal of Applied Physics ·M. Smith, Richard McMahon, M. Voelskow, W. Skorupa	2004	31
17	Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. Sverdlov, A. Botchkarev, H. Morkoç	1995	30
18	Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells Applied Physics Letters ·K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang	1998	23
19	Acceptor-bound exciton recombination dynamics in p-type GaN Applied Physics Letters ·M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun	1995	20
20	Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers Materials science forum ·W. Skorupa, D. Panknin, W. Anwand, M. Voelskow, Gabriel Ferro, Y. Monteil, A. Leycuras, Joerg Pezoldt, Richard McMahon, M. Smith, Jean Camassel, J. Stoëmenos, Efstathios K. Polychroniadis, Philippe Godignon, N. Mestres, Daniel Turover, S. Rushworth, Alois Friedberger	2004	17

About M. Smith

M. Smith is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Nuclear and High Energy Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 69 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Magnetic confinement fusion research (19 papers), Semiconductor materials and devices (15 papers), Superconducting Materials and Applications (12 papers), Semiconductor Quantum Structures and Devices (11 papers), Ga2O3 and related materials (9 papers), Silicon and Solar Cell Technologies (9 papers) and Silicon Carbide Semiconductor Technologies (9 papers). The work is most often cited by research in Condensed Matter Physics (891 citations), Electronic, Optical and Magnetic Materials (451 citations), Atomic and Molecular Physics, and Optics (535 citations), Materials Chemistry (574 citations) and Electrical and Electronic Engineering (585 citations). M. Smith has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include H. X. Jiang, J. Y. Lin, G. D. Chen, M. Asif Khan, C. J. Sun, A. Salvador, A. Botchkarev, M. Voelskow, Richard McMahon and H. Morkoç̌. Their work appears in journals such as Applied Physics Letters, Fusion Engineering and Design, Fusion Science & Technology, Journal of Applied Physics and IEEE Transactions on Plasma Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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