Л.И. Мурин

1.1k citations

65 papers · 853 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 56
- Silicon and Solar Cell Technologies 48
- Semiconductor materials and devices 19
- Thin-Film Transistor Technologies 15
- Integrated Circuits and Semiconductor Failure Analysis 4
Materials Chemistry 36
- Silicon Nanostructures and Photoluminescence 33

Co-authors: В. П. Маркевич (54 shared papers)J. L. Lindström (28 shared papers)Tomas Hallberg (10 shared papers)А. R. Peaker (16 shared papers)Л. Ф. Макаренко (7 shared papers)L. Dobaczewski (6 shared papers)B. G. Svensson (6 shared papers)B. G. Svensson (5 shared papers)
Journals: Physica B Condensed Matter (14 papers)Applied Physics Letters (3 papers)Physical Review B (2 papers)physica status solidi (b) (2 papers)Materials Science and Engineering B (2 papers)
Partner nations: Belarus Sweden United Kingdom

In The Last Decade

Л.И. Мурин

64 papers receiving 822 citations

Peers

Countries citing papers authored by Л.И. Мурин

Since Specialization

Citations

This map shows the geographic impact of Л.И. Мурин's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Л.И. Мурин with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Л.И. Мурин more than expected).

Fields of papers citing papers by Л.И. Мурин

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Л.И. Мурин. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Л.И. Мурин. The network helps show where Л.И. Мурин may publish in the future.

Co-authors

The 25 scholars most cited alongside Л.И. Мурин, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Л.И. Мурин Line = papers co-authored together Л.И. Мурин links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Experimental Evidence of the Oxygen Dimer in Silicon Physical Review Letters ·Л.И. Мурин, Tomas Hallberg, В. П. Маркевич, J. L. Lindström	1998	100
2	Electronic properties of vacancy–oxygen complex in Ge crystals Applied Physics Letters ·В. П. Маркевич, I.D. Hawkins, А. R. Peaker, V. V. Litvinov, Л.И. Мурин, L. Dobaczewski, J. L. Lindström	2002	59
3	Trivacancy and trivacancy-oxygen complexes in silicon: Experiments andab initiomodeling Physical Review B ·В. П. Маркевич, А. R. Peaker, С. Б. Ластовский, Л.И. Мурин, J. Coutinho, V. J. B. Torres, P. R. Briddon, L. Dobaczewski, E. V. Monakhov, B. G. Svensson	2009	52
4	Defect engineering in Czochralski silicon by electron irradiation at different temperatures Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J. L. Lindström, Л.И. Мурин, Tomas Hallberg, В. П. Маркевич, B. G. Svensson, M. Kleverman, J. Hermansson	2002	45
5	Electrical and Optical Characterization of Thermal Donors in Silicon physica status solidi (a) ·Y. A. I. Latushko, Л. Ф. Макаренко, В. П. Маркевич, Л.И. Мурин	1986	41
6	The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells? Applied Physics Letters ·Л.И. Мурин, Е. А. Толкачева, В. П. Маркевич, А. R. Peaker, B. Hamilton, Edouard V. Monakhov, B. G. Svensson, J. L. Lindström, P. Santos, J. Coutinho, Alexandra Carvalho	2011	40
7	The VO2* defect in silicon Physica B Condensed Matter ·J. L. Lindström, Л.И. Мурин, B. G. Svensson, В. П. Маркевич, Tomas Hallberg	2003	33
8	VO<sub>n</sub> (n≥3) Defects in Irradiated and Heat-Treated Silicon Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Л.И. Мурин, J. L. Lindström, B. G. Svensson, В. П. Маркевич, А. R. Peaker, Charalamos A. Londos	2005	31
9	Electronic and dynamical properties of the silicon trivacancy Physical Review B ·J. Coutinho, В. П. Маркевич, А. R. Peaker, B. Hamilton, С. Б. Ластовский, Л.И. Мурин, B. J. Svensson, M. J. Rayson, P. R. Briddon	2012	29
10	Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Л.И. Мурин, В. П. Маркевич, J. L. Lindström, M. Kleverman, J. Hermansson, Tomas Hallberg, B. G. Svensson	2001	29
11	Some new features of thermal donor formation in silicon at T < 800 K physica status solidi (a) ·В. П. Маркевич, Л. Ф. Макаренко, Л.И. Мурин	1986	27
12	On the identity of a crucial defect contributing to leakage current in silicon particle detectors Applied Physics Letters ·J. H. Bleka, Л.И. Мурин, Edouard V. Monakhov, B. S. Avset, Bengt Svensson	2008	23
13	The Oxygen Dimer in Silicon: Some Experimental Observations Materials science forum ·Tomas Hallberg, J. L. Lindström, Л.И. Мурин, В. П. Маркевич	1997	20
14	Evidence for trapped by carbon impurities in silicon Physica B Condensed Matter ·B. Hourahine, R. Jones, Sven Öberg, P. R. Briddon, В. П. Маркевич, R.C. Newman, J. Hermansson, M. Kleverman, J. L. Lindström, Л.И. Мурин, Naoki Fukata, M. Suezawa	2001	20
15	Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C Materials science forum ·J. L. Lindström, Tomas Hallberg, P. Liberski, B. G. Svensson, Л.И. Мурин, В. П. Маркевич	1997	18
16	Vacancy–oxygen complex in Ge crystals Physica B Condensed Matter ·В. П. Маркевич, V. V. Litvinov, L. Dobaczewski, J. L. Lindström, Л.И. Мурин, S.V. Vetrov, I.D. Hawkins, А. R. Peaker	2003	15
17	On the electrical activity of the Ci-Oi complex in silicon physica status solidi (a) ·Л.И. Мурин	1987	14
18	On the Nature of the Interstitial Defect with EC −0.16 eV Level in Irradiated Silicon physica status solidi (a) ·Л.И. Мурин	1986	14
19	Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·В. П. Маркевич, А. R. Peaker, I. F. Medvedeva, V. E. Gusakov, Л.И. Мурин, B. G. Svensson	2007	14
20	Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Lyudmila I. Khirunenko, Yu.V. Pomozov, N. A. Tripachko, Mikhail G. Sosnin, A.V. Duvanskii, Л.И. Мурин, J. L. Lindström, С. Б. Ластовский, Л. Ф. Макаренко, В. П. Маркевич, А. R. Peaker	2005	13

About Л.И. Мурин

Л.И. Мурин is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Computational Mechanics and Polymers and Plastics, having authored 65 papers that have together received 853 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (48 papers), Silicon Nanostructures and Photoluminescence (33 papers), Semiconductor materials and interfaces (25 papers), Semiconductor materials and devices (19 papers), Thin-Film Transistor Technologies (15 papers), Ion-surface interactions and analysis (14 papers), Transition Metal Oxide Nanomaterials (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (792 citations), Atomic and Molecular Physics, and Optics (338 citations), Materials Chemistry (355 citations), Computational Mechanics (116 citations) and Polymers and Plastics (46 citations). Л.И. Мурин has collaborated with scholars based in Belarus, Sweden and United Kingdom. Frequent co-authors include В. П. Маркевич, J. L. Lindström, Tomas Hallberg, А. R. Peaker, Л. Ф. Макаренко, L. Dobaczewski, B. G. Svensson, B. G. Svensson, С. Б. Ластовский and J. Coutinho. Their work appears in journals such as Physica B Condensed Matter, Applied Physics Letters, Physical Review B, physica status solidi (b) and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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