V. E. Gusakov

637 citations

37 papers · 506 · h-index 8

Impact in

Materials Chemistry top 10%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
Electrical and Electronic Engineering
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies

Papers in

Electrical and Electronic Engineering 19
- Silicon and Solar Cell Technologies 16
- Semiconductor materials and devices 6
Materials Chemistry 17
- Silicon Nanostructures and Photoluminescence 9
- 2D Materials and Applications 4

Co-authors: Beng Kang Tay (4 shared papers)Julia Gusakova (4 shared papers)А. В. Кривошеева (1 shared paper)В. Л. Шапошников (1 shared paper)Xingli Wang (1 shared paper)Li Lynn Shiau (1 shared paper)В. Е. Борисенко (1 shared paper)Л. И. Мурин (6 shared papers)
Journals: physica status solidi (a) (5 papers)Physica C Superconductivity (4 papers)Physica B Condensed Matter (3 papers)Journal of Low Temperature Physics (1 paper)Journal of Applied Physics (1 paper)
Partner nations: Belarus United Kingdom Singapore

In The Last Decade

V. E. Gusakov

32 papers receiving 502 citations

Peers

Countries citing papers authored by V. E. Gusakov

Since Specialization

Citations

This map shows the geographic impact of V. E. Gusakov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. E. Gusakov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. E. Gusakov more than expected).

Fields of papers citing papers by V. E. Gusakov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. E. Gusakov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. E. Gusakov. The network helps show where V. E. Gusakov may publish in the future.

Co-authors

The 25 scholars most cited alongside V. E. Gusakov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. E. Gusakov Line = papers co-authored together V. E. Gusakov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electronic Properties of Bulk and Monolayer TMDs: Theoretical Study Within DFT Framework (GVJ‐2e Method) physica status solidi (a) ·Julia Gusakova, Xingli Wang, Li Lynn Shiau, А. В. Кривошеева, В. Л. Шапошников, В. Е. Борисенко, V. E. Gusakov, Beng Kang Tay	2017	355
2	DFT study of structural and electronic properties of MoS2(1−x)Se2x alloy (x = 0.25) Journal of Applied Physics ·Julia Gusakova, V. E. Gusakov, Beng Kang Tay	2018	16
3	Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·В. П. Маркевич, А. R. Peaker, I. F. Medvedeva, V. E. Gusakov, Л.И. Мурин, B. G. Svensson	2007	14
4	General approach for band gap calculation of semiconductors and insulators physica status solidi (a) ·Julia Gusakova, Beng Kang Tay, V. E. Gusakov	2016	11
5	Effect of pressure on oxygen diffusion jump in Si: quantum-chemical simulations Physica B Condensed Matter ·V. E. Gusakov, Л. И. Мурин	2003	11
6	Structural instability and superconductivity in The European Physical Journal B ·S. Zherlitsyn, B. Lüthi, V. E. Gusakov, B. Wolf, Franz Ritter, D. Wichert, S. N. Barilo, S. V. Shiryaev, C. Escribe-Filippini, J.L. Tholence	2000	10
7	Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·В. П. Маркевич, А. R. Peaker, Bruce Hamilton, V. E. Gusakov, С. Б. Ластовский, Л. И. Мурин, Naveengoud Ganagona, E. V. Monakhov, Bengt Svensson	2015	8
8	Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·В. П. Маркевич, А. R. Peaker, С. Б. Ластовский, V. E. Gusakov, I. F. Medvedeva, Л. И. Мурин	2009	7
9	Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation Physica B Condensed Matter ·V. E. Gusakov, V. Belko, Nikolai Dorozhkin	2009	6
10	Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics physica status solidi (a) ·Stanislau B. Lastovskii, V. E. Gusakov, В. П. Маркевич, А. R. Peaker, H. S. Yakushevich, Ф. П. Коршунов, Л. И. Мурин	2017	6
11	General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·V. E. Gusakov	2005	6
12	Anisotropy of thermal conductivity in YBaCuO single crystals Physica C Superconductivity ·V. E. Gusakov, A. Jeżowski, S. N. Barilo, Н. А. Каланда, A. P. Saǐko	2000	6
13	The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms physica status solidi (a) ·V. E. Gusakov, Stanislau B. Lastovskii, Л. И. Мурин, Е. А. Толкачева, Lyudmila I. Khirunenko, Mikhail G. Sosnin, A.V. Duvanskii, В. П. Маркевич, Matthew P. Halsall, А. R. Peaker, Ilia Kolevatov, Hussein M. Ayedh, Edouard V. Monakhov, B. G. Svensson	2017	6
14	On possible explanation of temperature hysteresis of the superconducting transition temperature Low Temperature Physics ·A. P. Saǐko, V. E. Gusakov	1995	4
15	Anisotropy of thermal conductivity in single crystals YBa2Cu3O7 Physica B Condensed Matter ·V. E. Gusakov	2000	4
16	Hysteretic behavior of the thermal conductivity in YBa 2 Cu 3 O 7-δ A. P. Saǐko, V. E. Gusakov, V. S. Kuz’min	1993	4
17	Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals ECS Transactions ·В. П. Маркевич, А. R. Peaker, I. F. Medvedeva, V. E. Gusakov, Л. И. Мурин, B. G. Svensson	2009	4
18	On theory of the temperature hysteresis of ultrasonic wave velocity in high-Tc cuprates Physica C Superconductivity ·A. P. Saǐko, V. E. Gusakov, V. S. Kuz’min	1994	3
19	First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·V. E. Gusakov	2013	3
20	Diffusion of interstitial Hydrogen molecules in Crystalline Germanium and Silicon: Quantumchemical simulation Materials Science in Semiconductor Processing ·V. E. Gusakov	2006	3

About V. E. Gusakov

V. E. Gusakov is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Geophysics, having authored 37 papers that have together received 506 indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (16 papers), Physics of Superconductivity and Magnetism (14 papers), Semiconductor materials and interfaces (11 papers), Silicon Nanostructures and Photoluminescence (9 papers), High-pressure geophysics and materials (7 papers), Semiconductor materials and devices (6 papers), 2D Materials and Applications (4 papers) and Ion-surface interactions and analysis (4 papers). The work is most often cited by research in Materials Chemistry (399 citations), Electrical and Electronic Engineering (289 citations), Condensed Matter Physics (42 citations), Electronic, Optical and Magnetic Materials (56 citations) and Renewable Energy, Sustainability and the Environment (47 citations). V. E. Gusakov has collaborated with scholars based in Belarus, United Kingdom and Singapore. Frequent co-authors include Beng Kang Tay, Julia Gusakova, А. В. Кривошеева, В. Л. Шапошников, Xingli Wang, Li Lynn Shiau, В. Е. Борисенко, Л. И. Мурин, В. П. Маркевич and А. R. Peaker. Their work appears in journals such as physica status solidi (a), Physica C Superconductivity, Physica B Condensed Matter, Journal of Low Temperature Physics and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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