R.C. Newman
Impact in
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- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Papers in
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- Silicon and Solar Cell Technologies 81
- Semiconductor materials and devices 34
- Thin-Film Transistor Technologies 34
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- Semiconductor materials and interfaces 49
- Semiconductor Quantum Structures and Devices 36
- Co-authors
- R. Bullough (10 shared papers)A.R. Bean (3 shared papers)J. B. Willis (4 shared papers)E C Lightowlers (19 shared papers)R B Beall (11 shared papers)S.A. McQuaid (18 shared papers)R. Murray (10 shared papers)James H. R. Tucker (17 shared papers)
- Journals
- Semiconductor Science and Technology (17 papers)Applied Physics Letters (13 papers)Journal of Applied Physics (9 papers)Journal of Physics and Chemistry of Solids (7 papers)Physical review. B, Condensed matter (5 papers)
- Partner nations
- United KingdomUnited StatesGermany
In The Last Decade
R.C. Newman
166 papers receiving 3.9k citations
Peers
Comparison fields: 5 of 95
- Nuclear Energy and Engineering 33
- Atomic and Molecular Physics, and Optics 2.0k
- Electrical and Electronic Engineering 3.1k
- Materials Chemistry 1.8k
- Surfaces, Coatings and Films 159
Countries citing papers authored by R.C. Newman
This map shows the geographic impact of R.C. Newman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.C. Newman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.C. Newman more than expected).
Fields of papers citing papers by R.C. Newman
This network shows the impact of papers produced by R.C. Newman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.C. Newman. The network helps show where R.C. Newman may publish in the future.
Co-authors
The 25 scholars most cited alongside R.C. Newman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 171 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 1982 | 226 | |
| 2 | 1965 | 203 | |
| 3 | 1970 | 198 | |
| 4 | 1971 | 152 | |
| 5 | 2000 | 150 | |
| 6 | 1972 | 136 | |
| 7 | 1989 | 133 | |
| 8 | 1994 | 130 | |
| 9 | 1987 | 118 | |
| 10 | 1987 | 103 | |
| 11 | 1981 | 94 | |
| 12 | 1989 | 85 | |
| 13 | 1985 | 84 | |
| 14 | 1961 | 81 | |
| 15 | 1960 | 69 | |
| 16 | 1971 | 66 | |
| 17 | 1994 | 60 | |
| 18 | 1962 | 53 | |
| 19 | 1999 | 51 | |
| 20 | 1988 | 50 |
About R.C. Newman
R.C. Newman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Computational Mechanics and Surfaces, Coatings and Films, having authored 171 papers that have together received 4.3k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (81 papers), Semiconductor materials and interfaces (49 papers), Silicon Nanostructures and Photoluminescence (40 papers), Semiconductor Quantum Structures and Devices (36 papers), Semiconductor materials and devices (34 papers), Thin-Film Transistor Technologies (34 papers), Ion-surface interactions and analysis (19 papers) and Electron and X-Ray Spectroscopy Techniques (15 papers). The work is most often cited by research in Nuclear Energy and Engineering (33 citations), Atomic and Molecular Physics, and Optics (2.0k citations), Electrical and Electronic Engineering (3.1k citations), Materials Chemistry (1.8k citations) and Surfaces, Coatings and Films (159 citations). R.C. Newman has collaborated with scholars based in United Kingdom, United States and Germany. Frequent co-authors include R. Bullough, A.R. Bean, J. B. Willis, E C Lightowlers, R B Beall, S.A. McQuaid, R. Murray, James H. R. Tucker, J. Woodhead and Jonathan Wakefield. Their work appears in journals such as Semiconductor Science and Technology, Applied Physics Letters, Journal of Applied Physics, Journal of Physics and Chemistry of Solids and Physical review. B, Condensed matter.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.