K.C. Chiang

704 citations

27 papers · 625 · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Materials Chemistry
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 19
- Ferroelectric and Negative Capacitance Devices 17
- Advanced Memory and Neural Computing 6
- Advancements in Semiconductor Devices and Circuit Design 3
Materials Chemistry 8
- Ferroelectric and Piezoelectric Materials 6

Co-authors: Albert Chin (22 shared papers)S. P. McAlister (11 shared papers)W.J. Chen (6 shared papers)Hsuan‐Ling Kao (8 shared papers)C.C. Chi (5 shared papers)Chyong‐Huey Lai (5 shared papers)Chaoyi Huang (4 shared papers)Han Pan (4 shared papers)
Journals: IEEE Electron Device Letters (9 papers)Journal of The Electrochemical Society (2 papers)Polymers (2 papers)Buildings (2 papers)Materials (1 paper)
Partner nations: Taiwan Canada Singapore

In The Last Decade

K.C. Chiang

26 papers receiving 611 citations

Peers

Countries citing papers authored by K.C. Chiang

Since Specialization

Citations

This map shows the geographic impact of K.C. Chiang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.C. Chiang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.C. Chiang more than expected).

Fields of papers citing papers by K.C. Chiang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.C. Chiang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.C. Chiang. The network helps show where K.C. Chiang may publish in the future.

Co-authors

The 25 scholars most cited alongside K.C. Chiang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.C. Chiang Line = papers co-authored together K.C. Chiang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications IEEE Transactions on Electron Devices ·K.C. Chiang, C.-C. Huang, G.L. Chen, W.J. Chen, Hsuan‐Ling Kao, Yung‐Hsien Wu, Albert Chin, S. P. McAlister	2006	83
2	Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric IEEE Electron Device Letters ·K.C. Chiang, Chyong‐Huey Lai, Albert Chin, T.J. Wang, Hsin‐Yi Chiu, Jiann–Ruey Chen, S. P. McAlister, C.C. Chi	2005	68
3	High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning IEEE Electron Device Letters ·K.C. Chiang, C. H. Cheng, Han Pan, C. N. Hsiao, C. P. Chou, Albert Chin, H. L. Hwang	2007	50
4	Improved Capacitance Density and Reliability of High-$ \kappa$$\hbox{Ni}/\hbox{ZrO}_{2}/\hbox{TiN}$ MIM Capacitors Using Laser-Annealing Technique IEEE Electron Device Letters ·Chih‐Ming Tsai, K.C. Chiang, S. H. Lin, Kuo‐Chiang Hsu, C C, Albert Chin	2010	45
5	High-performance poly-silicon TFTs incorporating LaAlO/sub 3/ as the gate dielectric IEEE Electron Device Letters ·B.F. Hung, K.C. Chiang, Chaoyi Huang, Albert Chin, S. P. McAlister	2005	44
6	Fully Silicided NiSi:Hf–LaAlO<tex>$_3$</tex>/SG–GOI n-MOSFETs With High Electron Mobility IEEE Electron Device Letters ·Decai Yu, K.C. Chiang, Chien‐Fu Cheng, Albert Chin, Chun Zhu, M.F. Li, D. L. Kwong	2004	39
7	High-Density and Low-Leakage-Current MIM Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Insulators IEEE Electron Device Letters ·S. H. Lin, K.C. Chiang, Albert Chin, F. S. Yeh	2009	35
8	Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors IEEE Electron Device Letters ·K.C. Chiang, C. H. Cheng, Ke-Yin Jhou, Han Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang	2007	34
9	High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications IEEE Electron Device Letters ·K.C. Chiang, Chaoyi Huang, Albert Chin, W.J. Chen, S. P. McAlister, Hsin‐Yi Chiu, Jiann–Ruey Chen, C.C. Chi	2005	32
10	Novel SiO/sub 2/AlN/HfAlO/IrO/sub 2/ memory with fast erase, large ΔV/sub TH/ and good retention National University of Singapore ·Chyong‐Huey Lai, Albert Chin, K.C. Chiang, Won Jong Yoo, Chien‐Fu Cheng, S. P. McAlister, C.C. Chi, P. Wua	2005	27
11	Thermal Leakage Improvement by Using a High-Work-Function Ni Electrode in High-κ TiHfO Metal–Insulator–Metal Capacitors Journal of The Electrochemical Society ·K.C. Chiang, Ching-Chien Huang, Han Pan, C. N. Hsiao, Jun-Ting Lin, I−Ta Hsieh, C. H. Cheng, C. P. Chou, Albert Chin, H. L. Hwang, S. P. McAlister	2007	25
12	Very high K and high density TiTaO MIM capacitors for analog and RF applications National University of Singapore ·K.C. Chiang, Albert Chin, Chyong‐Huey Lai, W.J. Chen, Chien‐Fu Cheng, Byung Hun, C. C. Liao	2005	25
13	Low voltage high speed SiO/sub 2/AlGaN/AlLaO/sub 3/TaN memory with good retention Albert Chin, S. P. McAlister, C.C. Chi, C.C. Laio, C. Chen, K.C. Chiang, Decai Yu, Won Jong Yoo, G.S. Samudra, Ting Wang, I−Ta Hsieh	2005	24
14	High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications K.C. Chiang, Chaoyi Huang, Albert Chin, W. Chen, Hsuan‐Ling Kao, Min-Jun Hong, J. Kwo	2006	17
15	Very High Density (44 fF∕μm[sup 2]) SrTiO[sub 3] MIM Capacitors for RF Applications Journal of The Electrochemical Society ·K.C. Chiang, Jun-Ting Lin, Han Pan, C. N. Hsiao, W.J. Chen, Hsuan‐Ling Kao, I−Ta Hsieh, Albert Chin	2007	11
16	Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout National University of Singapore ·Hsuan‐Ling Kao, Albert Chin, J.M. Lai, C.F. Lee, K.C. Chiang, S. P. McAlister	2005	11
17	Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Dielectrics IEEE Electron Device Letters ·S. H. Lin, K.C. Chiang, F. S. Yeh, Albert Chin	2009	10
18	Very High Density RF MIM Capacitor Compatible with VLSI IEEE MTT-S International Microwave Symposium Digest, 2005. ·K.C. Chiang, Chyong‐Huey Lai, Albert Chin, Hsuan‐Ling Kao, S. P. McAlister, C. C.	2005	9
19	RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density IEEE Microwave and Wireless Components Letters ·Ching-Chien Huang, K.C. Chiang, Hsuan‐Ling Kao, Albert Chin, W.J. Chen	2006	9
20	A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO[sub 3] rf Capacitor Electrochemical and Solid-State Letters ·Chao-Ching Cheng, Chia‐Chang Huang, Hsiao‐Hsuan Hsu, Po‐Hsuan Chen, K.C. Chiang, Albert Chin, F. S. Yeh	2010	9

About K.C. Chiang

K.C. Chiang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Civil and Structural Engineering, Building and Construction and Condensed Matter Physics, having authored 27 papers that have together received 625 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Ferroelectric and Negative Capacitance Devices (17 papers), Advanced Memory and Neural Computing (6 papers), Ferroelectric and Piezoelectric Materials (6 papers), Innovative concrete reinforcement materials (3 papers), Recycled Aggregate Concrete Performance (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Infrastructure Maintenance and Monitoring (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (593 citations), Materials Chemistry (265 citations), Electronic, Optical and Magnetic Materials (82 citations), Polymers and Plastics (14 citations) and Atomic and Molecular Physics, and Optics (28 citations). K.C. Chiang has collaborated with scholars based in Taiwan, Canada and Singapore. Frequent co-authors include Albert Chin, S. P. McAlister, W.J. Chen, Hsuan‐Ling Kao, C.C. Chi, Chyong‐Huey Lai, Chaoyi Huang, Han Pan, H. L. Hwang and C. P. Chou. Their work appears in journals such as IEEE Electron Device Letters, Journal of The Electrochemical Society, Polymers, Buildings and Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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K.C. Chiang

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