J.B. Fedison

728 citations
26 papers · 616 · h-index 13

Impact in

    • GaN-based semiconductor devices and materials
    • Silicon Carbide Semiconductor Technologies
    • Semiconductor materials and devices
    • Electromagnetic Compatibility and Noise Suppression
    • Advanced DC-DC Converters
    • Silicon and Solar Cell Technologies

Papers in

J.B. Fedison

25 papers receiving 581 citations

Peers

J.B. Fedison
Comparison fields: 5 of 28
  • Condensed Matter Physics 156
  • Electrical and Electronic Engineering 558
  • Electronic, Optical and Magnetic Materials 94
  • Ceramics and Composites 24
  • Atomic and Molecular Physics, and Optics 122
Replace Christian Brylinski with:
Christian Brylinski France
Greg Dunne United States
E. Downey United States
Calvin H. Carter China
T. P. Chow United States
Stephan G. Mueller United States
H. Mitlehner Germany
R.T. Leonard China
Yean-Kuen Fang Taiwan
Katsuki Furukawa Japan
J.B. Fedison relative to Christian Brylinski France Christian Brylinski's profile →
Citations per field
00.5×5.7×
Christian Brylinski · 1×
Citations per year

Countries citing papers authored by J.B. Fedison

Since Specialization
Citations

This map shows the geographic impact of J.B. Fedison's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.B. Fedison with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.B. Fedison more than expected).

Fields of papers citing papers by J.B. Fedison

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.B. Fedison. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.B. Fedison. The network helps show where J.B. Fedison may publish in the future.

Co-authors

The 25 scholars most cited alongside J.B. Fedison, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.B. Fedison Line = papers co-authored together J.B. Fedison links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#Work
1 199893
2 200089
3 201462
4 200355
5 201652
6 200245
7 200135
8 200134
9 200226
10 200224
11 200518
12 199717
13 200214
14 20007
15 20027
16 20026
17 20046
18 20035
19 20045
20 20025

About J.B. Fedison

J.B. Fedison is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Mechanical Engineering, having authored 26 papers that have together received 616 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and devices (14 papers), Semiconductor materials and interfaces (8 papers), GaN-based semiconductor devices and materials (5 papers), Copper Interconnects and Reliability (5 papers), Advanced DC-DC Converters (4 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and Multilevel Inverters and Converters (3 papers). The work is most often cited by research in Condensed Matter Physics (156 citations), Electrical and Electronic Engineering (558 citations), Electronic, Optical and Magnetic Materials (94 citations), Ceramics and Composites (24 citations) and Atomic and Molecular Physics, and Optics (122 citations). J.B. Fedison has collaborated with scholars based in United States, Israel and China. Frequent co-authors include T. Paul Chow, Hongqiang Lu, Yi Tang, I. Bhat, T. P. Chow, Michael J. Harrison, Robert E. Stahlbush, M. Fatemi, S. D. Arthur and L.B. Rowland. Their work appears in journals such as IEEE Electron Device Letters, Journal of Electronic Materials, Applied Physics Letters, IEEE Sensors Journal and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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