David J. Spry

1.5k citations

86 papers · 1.2k · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 79
- Silicon Carbide Semiconductor Technologies 66
- Semiconductor materials and devices 19
- Electromagnetic Compatibility and Noise Suppression 17
- Silicon and Solar Cell Technologies 15
- Radiation Effects in Electronics 7
- 3D IC and TSV technologies 6
Atomic and Molecular Physics, and Optics 14
- Semiconductor materials and interfaces 12

Co-authors: Philip G. Neudeck (73 shared papers)Glenn M. Beheim (39 shared papers)Liang-Yü Chen (19 shared papers)Michael J. Krasowski (19 shared papers)Dorothy Lukco (23 shared papers)Norman F. Prokop (16 shared papers)Carl W. Chang (22 shared papers)Roger D. Meredith (16 shared papers)
Journals: Materials science forum (27 papers)Journal of Electronic Materials (3 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (2 papers)Journal of Physics D Applied Physics (1 paper)
Partner nations: United States Germany Cyprus

In The Last Decade

David J. Spry

82 papers receiving 1.2k citations

Peers

Countries citing papers authored by David J. Spry

Since Specialization

Citations

This map shows the geographic impact of David J. Spry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David J. Spry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David J. Spry more than expected).

Fields of papers citing papers by David J. Spry

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David J. Spry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David J. Spry. The network helps show where David J. Spry may publish in the future.

Co-authors

The 25 scholars most cited alongside David J. Spry, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with David J. Spry Line = papers co-authored together David J. Spry links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C IEEE Electron Device Letters ·Philip G. Neudeck, David J. Spry, Liang-Yü Chen, Norman F. Prokop, Michael J. Krasowski	2017	117
2	Extreme temperature 6H‐SiC JFET integrated circuit technology physica status solidi (a) ·Philip G. Neudeck, S.L. Garverick, David J. Spry, Liangyu Chen, Glenn M. Beheim, Michael J. Krasowski, Mehran Mehregany	2009	112
3	Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{\circ}\hbox{C}$ IEEE Electron Device Letters ·Philip G. Neudeck, David J. Spry, Liang-Yü Chen, Glenn M. Beheim, Robert S. Okojie, Carl W. Chang, Roger D. Meredith, Terry L. Ferrier, Laura J. Evans, Michael J. Krasowski, Norman F. Prokop	2008	112
4	Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions IEEE Journal of the Electron Devices Society ·Philip G. Neudeck, Liangyu Chen, Roger D. Meredith, Dorothy Lukco, David J. Spry, Leah M. Nakley, Gary W. Hunter	2018	58
5	CVD Growth of 3C‐SiC on 4H/6H Mesas Chemical Vapor Deposition ·Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. A. Powell, Hui Du, Marek Skowroński, Xuanqui Huang, Michael Dudley	2006	57
6	Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 °C Journal of Applied Physics ·Robert S. Okojie, Dorothy Lukco, Yuanliang L. Chen, David J. Spry	2002	57
7	Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions AIP Advances ·Philip G. Neudeck, Roger D. Meredith, Liang-Yü Chen, David J. Spry, Leah M. Nakley, Gary W. Hunter	2016	57
8	Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect IEEE Electron Device Letters ·David J. Spry, Philip G. Neudeck, Liang-Yü Chen, Dorothy Lukco, Carl W. Chang, Glenn M. Beheim	2016	53
9	Novel light-emitting devices based on pyridine-containing conjugated polymers IEEE Transactions on Electron Devices ·Y.Z. Wang, D. D. Gebler, David J. Spry, Dongchuan Fu, Timothy M. Swager, A.G. MacDiamid, A. J. Epstein	1997	35
10	Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits Journal of Microelectronics and Electronic Packaging ·Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yü Chen, Carl W. Chang	2018	34
11	Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers Journal of Applied Physics ·Philip G. Neudeck, J. A. Powell, Glenn M. Beheim, Emye L. Benavage, Phillip B. Abel, Andrew J. Trunek, David J. Spry, Michael Dudley, William M. Vetter	2002	29
12	Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ·David J. Spry, Philip G. Neudeck, Liang-Yü Chen, Dorothy Lukco, Carl W. Chang, Glenn M. Beheim, Michael J. Krasowski, Norman F. Prokop	2016	23
13	Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient Materials science forum ·David J. Spry, Philip G. Neudeck, Liangyu Chen, Glenn M. Beheim, Robert S. Okojie, Carl W. Chang, Roger D. Meredith, Terry L. Ferrier, Laura J. Evans	2008	21
14	Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect Materials science forum ·David J. Spry, Philip G. Neudeck, Liangyu Chen, Dorothy Lukco, Carl W. Chang, Glenn M. Beheim, Michael J. Krasowski, Norman F. Prokop	2016	21
15	Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages Materials science forum ·Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Norman F. Prokop, Liangyu Chen	2019	19
16	6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C NASA Technical Reports Server (NASA) ·Philip G. Neudeck, David J. Spry, Liang-Yü Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger D. Meredith, Terry L. Ferrier, Michael J. Krasowski, Norman F. Prokop	2008	19
17	Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits Materials science forum ·David J. Spry, Philip G. Neudeck, Dorothy Lukco, Liangyu Chen, Michael J. Krasowski, Norman F. Prokop, Carl W. Chang, Glenn M. Beheim	2018	18
18	SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C Materials science forum ·Philip G. Neudeck, David J. Spry, Liangyu Chen, Robert S. Okojie, Glenn M. Beheim, Roger D. Meredith, Terry L. Ferrier	2007	17
19	Chemical Analysis of Materials Exposed to Venus Temperature and Surface Atmosphere Earth and Space Science ·Dorothy Lukco, David J. Spry, R. P. Harvey, Gustavo Costa, Robert S. Okojie, Amir Avishai, Leah M. Nakley, Philip G. Neudeck, Gary W. Hunter	2018	17
20	Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ·Liang-Yü Chen, Philip G. Neudeck, David J. Spry, Glenn M. Beheim, Gary W. Hunter	2016	15

About David J. Spry

David J. Spry is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Ceramics and Composites, having authored 86 papers that have together received 1.2k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (66 papers), Semiconductor materials and devices (19 papers), Electromagnetic Compatibility and Noise Suppression (17 papers), Silicon and Solar Cell Technologies (15 papers), Semiconductor materials and interfaces (12 papers), Copper Interconnects and Reliability (8 papers), Radiation Effects in Electronics (7 papers) and 3D IC and TSV technologies (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Condensed Matter Physics (104 citations), Ceramics and Composites (50 citations), Electronic, Optical and Magnetic Materials (154 citations) and Atomic and Molecular Physics, and Optics (184 citations). David J. Spry has collaborated with scholars based in United States, Germany and Cyprus. Frequent co-authors include Philip G. Neudeck, Glenn M. Beheim, Liang-Yü Chen, Michael J. Krasowski, Dorothy Lukco, Norman F. Prokop, Carl W. Chang, Roger D. Meredith, Robert S. Okojie and Gary W. Hunter. Their work appears in journals such as Materials science forum, Journal of Electronic Materials, IEEE Electron Device Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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