H.S. Momose

2.6k citations

126 papers · 1.7k · h-index 21

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 121
- Semiconductor materials and devices 100
- Advancements in Semiconductor Devices and Circuit Design 94
- Integrated Circuits and Semiconductor Failure Analysis 31
- Silicon Carbide Semiconductor Technologies 23
- Low-power high-performance VLSI design 15
- Silicon and Solar Cell Technologies 9
- Electrostatic Discharge in Electronics 7
Atomic and Molecular Physics, and Optics 16
- Semiconductor materials and interfaces 15

Co-authors: Hiroshi Iwai (62 shared papers)T. Ohguro (63 shared papers)T. Yoshitomi (44 shared papers)T. Morimoto (31 shared papers)Y. Katsumata (36 shared papers)E. Morifuji (35 shared papers)Mizuki Ono (22 shared papers)M. Saito (18 shared papers)
Journals: IEEE Transactions on Electron Devices (23 papers)IEEE Journal of Solid-State Circuits (6 papers)Solid-State Electronics (4 papers)Microelectronic Engineering (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: Japan United States South Korea

In The Last Decade

H.S. Momose

116 papers receiving 1.7k citations

Peers

Countries citing papers authored by H.S. Momose

Since Specialization

Citations

This map shows the geographic impact of H.S. Momose's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.S. Momose with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.S. Momose more than expected).

Fields of papers citing papers by H.S. Momose

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.S. Momose. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.S. Momose. The network helps show where H.S. Momose may publish in the future.

Co-authors

The 25 scholars most cited alongside H.S. Momose, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H.S. Momose Line = papers co-authored together H.S. Momose links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 126 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI IEEE Transactions on Electron Devices ·T. Morimoto, T. Ohguro, H.S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, Masakatsu Tsuchiaki, Mizuki Ono, Y. Katsumata, Hiroshi Iwai	1995	216
2	Deep trench isolated CMOS devices R.D. Rung, H.S. Momose, Yoshihide Nagakubo	1982	86
3	Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide IEEE Transactions on Electron Devices ·H.S. Momose, Shigenari Nakamura, T. Ohguro, T. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katsumata, Hiroshi Iwai	1998	82
4	Future perspective and scaling down roadmap for RF CMOS E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, H. Kimijima, F. Matsuoka, M. Kinugawa, Y. Katsumata, Hiroshi Iwai	1999	76
5	Control of Charge Dynamics through a Charge‐Separation Interface for All‐Solid Perovskite‐Sensitized Solar Cells ChemPhysChem ·Yuhei Ogomi, Kenji Kukihara, Qing Shen, Taro Toyoda, Kenji Yoshino, Shyam S. Pandey, H.S. Momose, Shuzi Hayase	2014	68
6	An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs IEEE Transactions on Electron Devices ·R.W. Dutton, T.H. Lee, H. Iwai, Zhiping Yu, H.S. Momose, E. Morifuji, F. Danneville, Chang-Hoon Choi, Jung-Suk Goo	2000	52
7	Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration IEEE Transactions on Electron Devices ·H.S. Momose, T. Morimoto, Yoshio Ozawa, Kikuo Yamabe, Hiroshi Iwai	1994	51
8	High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs H.S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, I. Saito, T. Morimoto, Y. Katsumata, Hiroshi Iwai	2002	41
9	1.5-nm Gate oxide CMOS on [110] surface-oriented Si substrate IEEE Transactions on Electron Devices ·H.S. Momose, T. Ohguro, Kazunobu Kojima, Shin Nakamura, Y. Toyoshima	2003	41
10	0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation IEEE Transactions on Electron Devices ·M. Saito, Mizuki Ono, Ryuichi Fujimoto, Hiroshi Tanimoto, Nobuyuki Ito, T. Yoshitomi, T. Ohguro, H.S. Momose, Hiroshi Iwai	1998	40
11	DC holding and dynamic triggering characteristics of bulk CMOS latchup IEEE Transactions on Electron Devices ·R.D. Rung, H.S. Momose	1983	37
12	Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate IEEE Transactions on Electron Devices ·H.S. Momose, T. Ohguro, Shigenari Nakamura, Y. Toyoshima, H. Ishiuchi, Hiroshi Iwai	2002	36
13	Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs H.S. Momose, Mizuki Ono, T. Yoshitomi, T. Ohguro, Shin Nakamura, M. Saito, Hiroshi Iwai	2002	35
14	Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS IEEE Transactions on Electron Devices ·H.S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, Hiroshi Iwai	2001	33
15	Huge suppression of charge recombination in P3HT–ZnO organic–inorganic hybrid solar cells by locating dyes at the ZnO/P3HT interfaces Physical Chemistry Chemical Physics ·Qing Shen, Yuhei Ogomi, Sandeep Kumar Das, Shyam S. Pandey, Kenji Yoshino, Kenji Katayama, H.S. Momose, Taro Toyoda, Shuzi Hayase	2013	30
16	Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs Solid-State Electronics ·H.S. Momose, Mizuki Ono, T. Yoshitomi, T. Ohguro, Shin-ichi Nakamura, Masanobu Saito, Hiroshi Iwai	1997	27
17	Fabrication of sub-50-nm gate length n-metal–oxide–semiconductor field effect transistors and their electrical characteristics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Mizuki Ono, Masanobu Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H.S. Momose, Hiroshi Iwai	1995	27
18	Ultra-thin gate oxides-performance and reliability Hiroshi Iwai, H.S. Momose	2002	26
19	0.5 Micron BICMOS technology H.S. Momose, Kit Man Cham, C.I. Drowley, H.R. Grinolds, Hua Fu	1987	24
20	Improvement of high resistivity substrate for future mixed analog-digital applications T. Ohguro, Kazunobu Kojima, H.S. Momose, S. Nitta, Toshikazu Fukuda, Toshiyuki Enda, Y. Toyoshima	2003	22

About H.S. Momose

H.S. Momose is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Hardware and Architecture and Computer Networks and Communications, having authored 126 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (100 papers), Advancements in Semiconductor Devices and Circuit Design (94 papers), Integrated Circuits and Semiconductor Failure Analysis (31 papers), Silicon Carbide Semiconductor Technologies (23 papers), Semiconductor materials and interfaces (15 papers), Low-power high-performance VLSI design (15 papers), Silicon and Solar Cell Technologies (9 papers) and Electrostatic Discharge in Electronics (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (321 citations), Hardware and Architecture (50 citations), Materials Chemistry (187 citations) and Biomedical Engineering (176 citations). H.S. Momose has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Hiroshi Iwai, T. Ohguro, T. Yoshitomi, T. Morimoto, Y. Katsumata, E. Morifuji, Mizuki Ono, M. Saito, Y. Toyoshima and Kikuo Yamabe. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits, Solid-State Electronics, Microelectronic Engineering and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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