G.H. Johnson
Impact in
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- Radiation Effects in Electronics
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
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- VLSI and Analog Circuit Testing
Papers in
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- Radiation Effects in Electronics 12
- Semiconductor materials and devices 2
- Advancements in Semiconductor Devices and Circuit Design 1
- Low-power high-performance VLSI design 1
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- VLSI and Analog Circuit Testing 2
- Co-authors
- Ronald D. Schrimpf (14 shared papers)Kenneth F. Galloway (14 shared papers)C. Dachs (3 shared papers)J.M. Palau (2 shared papers)Jeffery L. Titus (4 shared papers)R. Koga (2 shared papers)Ronald L. Pease (3 shared papers)C. Frank Wheatley (4 shared papers)
- Journals
- IEEE Transactions on Nuclear Science (7 papers)Microelectronics Reliability (1 paper)Applied Physics Letters (1 paper)Quality and Reliability Engineering International (1 paper)IEEE Transactions on Electron Devices (1 paper)
- Partner nations
- United States
In The Last Decade
G.H. Johnson
17 papers receiving 507 citations
Peers
Comparison fields: 5 of 16
- Electrical and Electronic Engineering 515
- Hardware and Architecture 11
- Radiation 4
- Statistics, Probability and Uncertainty 3
- Nuclear and High Energy Physics 5
Countries citing papers authored by G.H. Johnson
This map shows the geographic impact of G.H. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.H. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.H. Johnson more than expected).
Fields of papers citing papers by G.H. Johnson
This network shows the impact of papers produced by G.H. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.H. Johnson. The network helps show where G.H. Johnson may publish in the future.
Co-authors
The 15 scholars most cited alongside G.H. Johnson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 1996 | 102 | |
| 2 | 1995 | 93 | |
| 3 | 1993 | 89 | |
| 4 | 1996 | 81 | |
| 5 | 1992 | 59 | |
| 6 | 1991 | 39 | |
| 7 | 1996 | 19 | |
| 8 | 1996 | 11 | |
| 9 | 1994 | 9 | |
| 10 | 1995 | 6 | |
| 11 | 2002 | 6 | |
| 12 | 2002 | 5 | |
| 13 | 2002 | 5 | |
| 14 | 1996 | 4 | |
| 15 | 2005 | 4 | |
| 16 | Temperature dependence of single-event burnout in n-channel power MOSFET's | 1994 | 1 |
| 17 | ISS: U.S. National Laboratory | 2018 | 1 |
About G.H. Johnson
G.H. Johnson is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Astronomy and Astrophysics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 17 papers that have together received 534 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (12 papers), Semiconductor materials and devices (2 papers), VLSI and Analog Circuit Testing (2 papers), Advancements in Semiconductor Devices and Circuit Design (1 paper), Low-power high-performance VLSI design (1 paper) and Space exploration and regulation (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (515 citations), Hardware and Architecture (11 citations), Radiation (4 citations), Statistics, Probability and Uncertainty (3 citations) and Nuclear and High Energy Physics (5 citations). G.H. Johnson has collaborated with scholars based in United States. Frequent co-authors include Ronald D. Schrimpf, Kenneth F. Galloway, C. Dachs, J.M. Palau, Jeffery L. Titus, R. Koga, Ronald L. Pease, C. Frank Wheatley, Mark Allenspach and W.E. Combs. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, Applied Physics Letters, Quality and Reliability Engineering International and IEEE Transactions on Electron Devices.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.