G.H. Johnson

649 citations
20 papers · 557 · h-index 10

Impact in

    • Radiation Effects in Electronics
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Electrostatic Discharge in Electronics
    • Silicon Carbide Semiconductor Technologies
    • Low-power high-performance VLSI design
    • VLSI and Analog Circuit Testing

Papers in

G.H. Johnson

20 papers receiving 523 citations

Peers

G.H. Johnson
Comparison fields: 5 of 32
  • Electrical and Electronic Engineering 539
  • Hardware and Architecture 64
  • Nuclear Energy and Engineering 4
  • Automotive Engineering 18
  • Radiation 12
Replace M. Allenspach with:
M. Allenspach United States
C.R. Cirba United States
C. Dachs Belgium
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Citations per field
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Citations per year

Countries citing papers authored by G.H. Johnson

Since Specialization
Citations

This map shows the geographic impact of G.H. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.H. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.H. Johnson more than expected).

Fields of papers citing papers by G.H. Johnson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.H. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.H. Johnson. The network helps show where G.H. Johnson may publish in the future.

Co-authors

The 18 scholars most cited alongside G.H. Johnson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G.H. Johnson Line = papers co-authored together G.H. Johnson links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown
#Work
1 1996102
2 199595
3 199389
4 199679
5 199260
6 199141
7 199619
8 199611
9 199410
10 198810
11
Features of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETs
19909
12 20026
13 19965
14 19955
15 20025
16 20025
17 19532
18
Analytical modeling of single-event burnout of power transistors.
19922
19
Temperature dependence of single-event burnout in n-channel power MOSFET's
19941
20
ISS: U.S. National Laboratory
20181

About G.H. Johnson

G.H. Johnson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Hardware and Architecture, Cellular and Molecular Neuroscience and Astronomy and Astrophysics, having authored 20 papers that have together received 557 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (13 papers), Radiation Effects in Electronics (13 papers), Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Electrostatic Discharge in Electronics (4 papers), VLSI and Analog Circuit Testing (2 papers), Neuroscience and Neural Engineering (1 paper) and Silicon Carbide Semiconductor Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (539 citations), Hardware and Architecture (64 citations), Nuclear Energy and Engineering (4 citations), Automotive Engineering (18 citations) and Radiation (12 citations). G.H. Johnson has collaborated with scholars based in United States and France. Frequent co-authors include Ronald D. Schrimpf, K.F. Galloway, C. Dachs, J.M. Palau, J.L. Titus, R. Koga, R.L. Pease, D. Schmidt, Daniel M. Fleetwood and M. Allenspach. Their work appears in journals such as IEEE Transactions on Nuclear Science, Applied Physics Letters, Quality and Reliability Engineering International, Microelectronics Reliability and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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