Fatima Husna

1.6k citations

31 papers · 1.3k · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Multilevel Inverters and Converters
- Advanced DC-DC Converters

Papers in

Electrical and Electronic Engineering 28
- Silicon Carbide Semiconductor Technologies 21
- Semiconductor materials and devices 13
- Multilevel Inverters and Converters 9
- Electromagnetic Compatibility and Noise Suppression 5
- Advancements in Semiconductor Devices and Circuit Design 4
- HVDC Systems and Fault Protection 3
Condensed Matter Physics 13
- GaN-based semiconductor devices and materials 13

Co-authors: Anant Agarwal (13 shared papers)Sei‐Hyung Ryu (10 shared papers)Sarah K. Haney (6 shared papers)Robert Callanan (7 shared papers)Alex Q. Huang (2 shared papers)Tiefu Zhao (2 shared papers)Jun Wang (2 shared papers)Jun Li (1 shared paper)
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Semiconductor Science and Technology (1 paper)Microelectronics Reliability (1 paper)
Partner nations: United States China United Kingdom

In The Last Decade

Fatima Husna

31 papers receiving 1.3k citations

Peers

Countries citing papers authored by Fatima Husna

Since Specialization

Citations

This map shows the geographic impact of Fatima Husna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fatima Husna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fatima Husna more than expected).

Fields of papers citing papers by Fatima Husna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fatima Husna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fatima Husna. The network helps show where Fatima Husna may publish in the future.

Co-authors

The 25 scholars most cited alongside Fatima Husna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Fatima Husna Line = papers co-authored together Fatima Husna links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization, Modeling, and Application of 10-kV SiC MOSFET IEEE Transactions on Electron Devices ·Jun Wang, Tiefu Zhao, Jun Li, Alex Q. Huang, Robert Callanan, Fatima Husna, Anant Agarwal	2008	327
2	A New Degradation Mechanism in High-Voltage SiC Power MOSFETs IEEE Electron Device Letters ·Anant Agarwal, Fatima Husna, Sarah K. Haney, Sei‐Hyung Ryu	2007	231
3	SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs IEEE Electron Device Letters ·G. Simin, A. Koudymov, Fatima Husna, Jianping Zhang, Jinwei Yang, M. Asif Khan, X. Hu, Ahmad Tarakji, R. Gaška, M. S. Shur	2002	93
4	Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill IEEE Electron Device Letters ·Jie Sun, Fatima Husna, A. Koudymov, A. Chitnis, X. Hu, H.-M. Wang, Jianping Zhang, G. Simin, J. Yang, M.A. Khan	2003	87
5	High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate IEEE Transactions on Electron Devices ·Fatima Husna, M. Lachab, Mahbuba Sultana, V. Adivarahan, Q. Fareed, Asif Khan	2012	79
6	Submicron gate Si₃N₄/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors IEEE Electron Device Letters ·V. Adivarahan, Mikhail Gaevski, Wenhong Sun, Fatima Husna, A. Koudymov, Salih Saygı, G. Simin, J. Yang, M.A. Khan, Ahmad Tarakji, M. S. Shur, R. Gaška	2003	73
7	AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors Applied Physics Letters ·C. Q. Chen, Jianping Zhang, V. Adivarahan, A. Koudymov, Fatima Husna, G. Simin, Jie Yang, M. Asif Khan	2003	70
8	A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching Materials science forum ·Mrinal K. Das, Q. Jon Zhang, Robert Callanan, Craig Capell, Jack Clayton, Matthew Donofrio, Sarah K. Haney, Fatima Husna, Charlotte Jonas, Jim Richmond, Joseph J. Sumakeris	2008	47
9	Large-signal linearity in III-N MOSDHFETs IEEE Electron Device Letters ·Ahmad Tarakji, Fatima Husna, X. Hu, J.-P. Zhang, G. Simin, Muhammad Asif Khan, M. S. Shur, R. Gaška	2003	35
10	Maximum current in nitride-based heterostructure field-effect transistors Applied Physics Letters ·A. Koudymov, Fatima Husna, G. Simin, J. Yang, M. Asif Khan, Ahmad Tarakji, X. Hu, M. S. Shur, R. Gaška	2002	31
11	Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes Microelectronics Reliability ·A. Греков, Qingchun Zhang, Fatima Husna, Anant Agarwal, T. S. Sudarshan	2008	27
12	State of the Art 10 kV NMOS Transistors Mrinal K. Das, Robert Callanan, D.C. Capell, Brett Hull, Fatima Husna, James Richmond, Michael O’Loughlin, Michael J. Paisley, A. Powell, Qingchun Zhang	2008	25
13	Performance of 60 A, 1200 V 4H-SiC DMOSFETs Materials science forum ·Brett Hull, Charlotte Jonas, Sei‐Hyung Ryu, Mrinal K. Das, Michael O’Loughlin, Fatima Husna, Robert Callanan, Jim Richmond, Anant Agarwal, John W. Palmour, Charles Scozzie	2009	25
14	Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V Applied Physics Express ·D. V. Morgan, Mahbuba Sultana, Fatima Husna, Sho Sugiyama, Q. Fareed, V. Adivarahan, M. Lachab, Asif Khan	2011	22
15	4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield Qingchun Zhang, Al Burk, Fatima Husna, Robert Callanan, Anant Agarwal, John W. Palmour, Robert E. Stahlbush, Charles Scozzie	2009	18
16	10 kV SiC MOSFET Based Boost Converter Jun Wang, Jun Li, Xiaohu Zhou, Tiefu Zhao, Alex Q. Huang, Robert Callanan, Fatima Husna, Anant Agarwal	2008	16
17	Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO₂gate dielectric Semiconductor Science and Technology ·M. Lachab, Mahbuba Sultana, Fatima Husna, V. Adivarahan, Q. Fareed, M.A. Khan	2012	14
18	High Speed Switching Devices in 4H-SiC - Performance and Reliability Sei‐Hyung Ryu, Sumi Krishnaswami, Brett Hull, Bradley Heath, Mrinal K. Das, Jim Richmond, Fatima Husna, Jincai Zhang, Anant Agarwal, John W. Palmour, A. Lelis, B. Geil, D.C. Katsis, Charles Scozzie, James D. Scofield	2006	14
19	Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs Materials science forum ·Sei‐Hyung Ryu, Fatima Husna, Sarah K. Haney, Qing Chun Jon Zhang, Robert E. Stahlbush, Anant Agarwal	2008	13
20	AlGaN/GaN MOSHFET integrated circuit power converter 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) ·Steven G. Pytel, S. Lentijo, A. Koudymov, S. Rai, Fatima Husna, V. Adivarahan, A. Chitnis, J. Yang, J.L. Hudgins, Enrico Santi, Antonello Monti, G. Simin, M.A. Khan	2004	11

About Fatima Husna

Fatima Husna is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 31 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (21 papers), GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (13 papers), Multilevel Inverters and Converters (9 papers), Ga2O3 and related materials (7 papers), Electromagnetic Compatibility and Noise Suppression (5 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers) and HVDC Systems and Fault Protection (3 papers). The work is most often cited by research in Condensed Matter Physics (509 citations), Electrical and Electronic Engineering (1.2k citations), Electronic, Optical and Magnetic Materials (278 citations), Atomic and Molecular Physics, and Optics (173 citations) and Ceramics and Composites (28 citations). Fatima Husna has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include Anant Agarwal, Sei‐Hyung Ryu, Sarah K. Haney, Robert Callanan, Alex Q. Huang, Tiefu Zhao, Jun Wang, Jun Li, G. Simin and A. Koudymov. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Semiconductor Science and Technology and Microelectronics Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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