Brett Hull

2.8k citations

116 papers · 2.3k · h-index 26

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- HVDC Systems and Fault Protection
- Radiation Effects in Electronics
Condensed Matter Physics top 10%

Papers in

Electrical and Electronic Engineering 116
- Silicon Carbide Semiconductor Technologies 110
- Semiconductor materials and devices 48
- Multilevel Inverters and Converters 29
- Electromagnetic Compatibility and Noise Suppression 24
- HVDC Systems and Fault Protection 17
- Advancements in Semiconductor Devices and Circuit Design 15
Atomic and Molecular Physics, and Optics 12
- Semiconductor materials and interfaces 11

Co-authors: John W. Palmour (74 shared papers)Scott T. Allen (38 shared papers)Jim Richmond (33 shared papers)Sei‐Hyung Ryu (40 shared papers)Mrinal K. Das (37 shared papers)Daniel J. Lichtenwalner (31 shared papers)Edward Van Brunt (26 shared papers)D.E. Grider (9 shared papers)
Journals: Materials science forum (43 papers)Solid-State Electronics (4 papers)Journal of Applied Physics (3 papers)Semiconductor Science and Technology (3 papers)IEEE Transactions on Nuclear Science (3 papers)
Partner nations: United States China Russia

In The Last Decade

Brett Hull

115 papers receiving 2.2k citations

Peers

Countries citing papers authored by Brett Hull

Since Specialization

Citations

This map shows the geographic impact of Brett Hull's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brett Hull with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brett Hull more than expected).

Fields of papers citing papers by Brett Hull

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brett Hull. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brett Hull. The network helps show where Brett Hull may publish in the future.

Co-authors

The 25 scholars most cited alongside Brett Hull, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Brett Hull Line = papers co-authored together Brett Hull links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 116 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications IEEE Transactions on Power Electronics ·Samir Hazra, Ankan De, Lin Cheng, John W. Palmour, Marcelo Schupbach, Brett Hull, Scott T. Allen, Subhashish Bhattacharya	2015	225
2	Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices IEEE Transactions on Nuclear Science ·Arthur F. Witulski, Robert Arslanbekov, Ashok Raman, Ronald D. Schrimpf, Andrew L. Sternberg, K.F. Galloway, Arto Javanainen, D.E. Grider, Daniel J. Lichtenwalner, Brett Hull	2017	81
3	Recent progress in SiC DMOSFETs and JBS diodes at Cree Robert Callanan, Anant Agarwal, Albert A. Burk, Mrinal K. Das, Brett Hull, F. Husna, A. Powell, Jim Richmond, Sei‐Hyung Ryu, Qingchun Zhang	2008	81
4	New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications Jeffrey B. Casady, Vipindas Pala, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Gangyao Wang, Jim Richmond, Scott T. Allen, D.E. Grider, John W. Palmour	2015	79
5	The next generation of high voltage (10 kV) silicon carbide power modules Brandon Passmore, Zach Cole, Brad McGee, Matthew Wells, Jennifer Stabach, Josh Bradshaw, Robert Shaw, Dan Martin, Ty McNutt, Edward VanBrunt, Brett Hull, D.E. Grider	2016	79
6	Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices Materials science forum ·Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, C. Hallin, Brett Hull, Erik Janzén, H. Lendenmann, Michael O’Loughlin, Michael J. Paisley, S. Ha, Marek Skowroński, John W. Palmour, Calvin H. Carter	2006	78
7	Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers IEEE Transactions on Electron Devices ·Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin, Qingchun Zhang, Jim Richmond, Adrian R. Powell, Eugene A. Imhoff, Karl D. Hobart, Angel Rivera-Lopez, Allen R. Hefner	2008	71
8	10 kV, 5A 4H-SiC Power DMOSFET Sei‐Hyung Ryu, Sumi Krishnaswami, Brett Hull, Jim Richmond, Anant Agarwal, Allen R. Hefner	2006	61
9	Short-Circuit Degradation of 10-kV 10-A SiC MOSFET IEEE Transactions on Power Electronics ·Emanuel-Petre Eni, Szymon Bęczkowski, Stig Munk‐Nielsen, Tamás Kerekes, Remus Teodorescu, R. R. Juluri, Brian Julsgaard, Edward VanBrunt, Brett Hull, Shadi Sabri, David Grider, Christian Uhrenfeldt	2017	60
10	Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs Brett Hull, Scott T. Allen, Q. Zhang, D. A. Gajewski, Vipindas Pala, Jim Richmond, Sei‐Hyung Ryu, Michael O’Loughlin, Edward Van Brunt, Lin Cheng, Albert A. Burk, Jeff B. Casady, D.E. Grider, John W. Palmour	2014	59
11	New generation 6.5 kV SiC power MOSFET Shadi Sabri, Edward Van Brunt, Adam Barkley, Brett Hull, Michael O’Loughlin, Al Burk, Scott T. Allen, John W. Palmour	2017	58
12	Reliability studies of SiC vertical power MOSFETs Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, D. A. Gajewski, D.E. Grider, Scott T. Allen, John W. Palmour, Akin Akturk, J.M. McGarrity	2018	52
13	Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures Semiconductor Science and Technology ·S. L. Rumyantsev, M. S. Shur, M. E. Levinshteĭn, P. A. Ivanov, John W. Palmour, Anant Agarwal, Brett Hull, Sei‐Hyung Ryu	2009	51
14	Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices Conference record ·Allen R. Hefner, Sei‐Hyung Ryu, Brett Hull, D.W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam Duong, Adwoa Akuffo, Madelaine Hernández-Mora	2006	50
15	SiC power device reliability D. A. Gajewski, Brett Hull, Daniel J. Lichtenwalner, Sei‐Hyung Ryu, Eric Bonelli, Habib A. Mustain, Gangyao Wang, Scott T. Allen, John W. Palmour	2016	49
16	Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes IEEE Transactions on Nuclear Science ·Akin Akturk, J.M. McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, D.E. Grider, R. Wilkins	2018	49
17	Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout Materials science forum ·Daniel J. Lichtenwalner, Akin Akturk, J.M. McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, David Grider, Scott T. Allen, John W. Palmour	2018	41
18	Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs Materials science forum ·Sei‐Hyung Ryu, Brett Hull, Sarit Dhar, Lin Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das, Anant Agarwal, John W. Palmour, Aivars J. Lelis, Bruce Geil, Charles Scozzie	2010	40
19	Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Materials science forum ·Mrinal K. Das, Joseph J. Sumakeris, Brett Hull, Jim Richmond, Sumi Krishnaswami, Adrian R. Powell	2005	39
20	20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems Brett Hull, Mrinal K. Das, F. Husna, Robert Callanan, Abhishek Agarwal, John W. Palmour	2009	35

About Brett Hull

Brett Hull is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Control and Systems Engineering, Electronic, Optical and Magnetic Materials and Mechanical Engineering, having authored 116 papers that have together received 2.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (110 papers), Semiconductor materials and devices (48 papers), Multilevel Inverters and Converters (29 papers), Electromagnetic Compatibility and Noise Suppression (24 papers), HVDC Systems and Fault Protection (17 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and interfaces (11 papers) and Pulsed Power Technology Applications (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.3k citations), Condensed Matter Physics (111 citations), Electronic, Optical and Magnetic Materials (139 citations), Atomic and Molecular Physics, and Optics (216 citations) and Ceramics and Composites (34 citations). Brett Hull has collaborated with scholars based in United States, China and Russia. Frequent co-authors include John W. Palmour, Scott T. Allen, Jim Richmond, Sei‐Hyung Ryu, Mrinal K. Das, Daniel J. Lichtenwalner, Edward Van Brunt, D.E. Grider, Anant Agarwal and Lin Cheng. Their work appears in journals such as Materials science forum, Solid-State Electronics, Journal of Applied Physics, Semiconductor Science and Technology and IEEE Transactions on Nuclear Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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