Ty McNutt

2.1k citations
85 papers · 1.7k · h-index 19

Impact in

  • Electrical and Electronic Engineering top 2%
    • Silicon Carbide Semiconductor Technologies
    • Advanced DC-DC Converters
    • Multilevel Inverters and Converters
    • Electromagnetic Compatibility and Noise Suppression
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • HVDC Systems and Fault Protection
  • Automotive Engineering top 5%
    • Advanced Battery Technologies Research

Papers in

  • Electrical and Electronic Engineering 85
    • Silicon Carbide Semiconductor Technologies 79
    • Semiconductor materials and devices 29
    • Advanced DC-DC Converters 25
    • Electromagnetic Compatibility and Noise Suppression 22
    • Advancements in Semiconductor Devices and Circuit Design 21
    • Multilevel Inverters and Converters 16
    • Silicon and Solar Cell Technologies 8
    • Electrostatic Discharge in Electronics 6
  • Mechanical Engineering 7
Co-authors
Alexander B. Lostetter (13 shared papers)Allen R. Hefner (13 shared papers)D.W. Berning (12 shared papers)Brandon Passmore (21 shared papers)H. Alan Mantooth (11 shared papers)Zach Cole (13 shared papers)Daniel Martin (10 shared papers)Bret Whitaker (11 shared papers)
Journals
IEEE Electron Device Letters (4 papers)IEEE Transactions on Power Electronics (4 papers)SAE technical papers on CD-ROM/SAE technical paper series (2 papers)IEEE Transactions on Electron Devices (2 papers)Solid-State Electronics (2 papers)
Partner nations
United StatesGermanyJapan

In The Last Decade

Ty McNutt

83 papers receiving 1.6k citations

Peers

Ty McNutt
Comparison fields: 5 of 41
  • Electrical and Electronic Engineering 1.6k
  • Automotive Engineering 192
  • Mechanical Engineering 198
  • Ceramics and Composites 30
  • Condensed Matter Physics 56
Replace Zhenxian Liang with:
Zhenxian Liang United States
Alexander B. Lostetter United States
Olayiwola Alatise United Kingdom
Shan Yin China
Brandon Passmore United States
Jacek Rąbkowski Poland
Uwe Scheuermann Germany
Szymon Bęczkowski Denmark
S. Waffler Switzerland
Jose Ortiz Gonzalez United Kingdom
Ty McNutt relative to Zhenxian Liang United States Zhenxian Liang's profile →
Citations per field
00.5×1.5×1.8×
Zhenxian Liang · 1×
Citations per year

Countries citing papers authored by Ty McNutt

Since Specialization
Citations

This map shows the geographic impact of Ty McNutt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ty McNutt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ty McNutt more than expected).

Fields of papers citing papers by Ty McNutt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ty McNutt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ty McNutt. The network helps show where Ty McNutt may publish in the future.

Co-authors

The 25 scholars most cited alongside Ty McNutt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ty McNutt Line = papers co-authored together Ty McNutt links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 85 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices
IEEE Transactions on Power Electronics ·Bret Whitaker, Adam Barkley, Zach Cole, Brandon Passmore, Daniel Martin, Ty McNutt, Alexander B. Lostetter, Jae Seung Lee, Koji Shiozaki
2013361
2
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
IEEE Transactions on Power Electronics ·Ty McNutt, Allen R. Hefner, H. Alan Mantooth, D.W. Berning, Sei‐Hyung Ryu
2007203
3
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
Jared Homberger, Alexander B. Lostetter, K.J. Olejniczak, Ty McNutt, Shalini Lal, Alan Mantooth
2004132
4
The next generation of high voltage (10 kV) silicon carbide power modules
Brandon Passmore, Zach Cole, Brad McGee, Matthew Wells, Jennifer Stabach, Josh Bradshaw, Robert Shaw, Dan Martin, Ty McNutt, Edward VanBrunt, Brett Hull, D.E. Grider
201679
5
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
IEEE Transactions on Power Electronics ·Ty McNutt, Allen R. Hefner, H. Alan Mantooth, J. Duliere, D.W. Berning, Ranbir Singh
200451
6
A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
Ranjan Lamichhane, Nance Ericsson, S.S. Frank, C.L. Britton, Laura D. Marlino, Alan Mantooth, Matt Francis, Paul Shepherd, Michael D. Glover, Sonia Peréz, Ty McNutt, Bret Whitaker, Zach Cole
201445
7
Silicon carbide power MOSFET model and parameter extraction sequence
Ty McNutt, Allen R. Hefner, Alan Mantooth, D.W. Berning, Sei‐Hyung Ryu
200442
8
A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
IEEE Transactions on Power Electronics ·Nance Ericson, S.S. Frank, C.L. Britton, Laura D. Marlino, Sei‐Hyung Ryu, D.E. Grider, Alan Mantooth, Matt Francis, Ranjan Lamichhane, Mihir Mudholkar, Paul Shepherd, Michael D. Glover, Javier Valle-Mayorga, Ty McNutt, Adam Barkley, Bret Whitaker, Zach Cole, Brandon Passmore, Alex Lostetter
201338
9
Bidirectional, SiC module-based solid-state circuit breakers for 270 V<inf>dc</inf> MEA/AEA systems
Jonathan Hayes, Kevin George, Peter Killeen, Brice McPherson, K.J. Olejniczak, Ty McNutt
201636
10
A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area
IEEE Electron Device Letters ·Victor Veliadis, Ty McNutt, Megan Snook, Harold Hearne, Paul Potyraj, Charles Scozzie
200834
11
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
IEEE Transactions on Electron Devices ·Robert S. Howell, Steven Buchoff, Stephen Van Campen, Ty McNutt, A. Ezis, Bettina Nechay, Christopher F. Kirby, M.E. Sherwin, R.C. Clarke, Ranbir Singh
200834
12
Design of a 250 kW, 1200 V SiC MOSFET-based three-phase inverter by considering a subsystem level design optimization approach
A.H. Wijenayake, K.J. Olejniczak, David Simco, Stephen Minden, Matthew Feurtado, Brandon Passmore, Ty McNutt, Alex Lostetter, Daniel Martin
201733
13
A technique to increase the efficiency of high-voltage charge pumps
IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing ·Mohammad Rashedul Hoque, Toqeer Ahmad, Ty McNutt, H. Alan Mantooth, Mohammad Mojarradi
200632
14
A high voltage Dickson charge pump in SOI CMOS
Mohammad Rashedul Hoque, Ty McNutt, J. Zhang, Alan Mantooth, Mohammad Mojarradi
200428
15
A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit
IEEE Electron Device Letters ·Victor Veliadis, Megan Snook, Ty McNutt, Harold Hearne, Paul Potyraj, Aivars J. Lelis, Charles Scozzie
200827
16
A compact 110 kVA, 140°C ambient, 105°C liquid cooled, all-SiC inverter for electric vehicle traction drives
K.J. Olejniczak, Tom Flint, David Simco, S. Storkov, B. McGee, Robert Shaw, Brandon Passmore, Kenny George, Austin Curbow, Ty McNutt
201727
17
Comparing the switching performance of SiC MOSFET intrinsic body diode to additional SiC schottky diodes in SiC power modules
Daniel Martin, Peter Killeen, William Austin Curbow, Brett Sparkman, Lauren E. Kegley, Ty McNutt
201622
18
High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications
Bret Whitaker, Zach Cole, Brandon Passmore, Daniel Martin, Ty McNutt, Alex Lostetter, M.N. Ericson, S.S. Frank, C.L. Britton, Laura D. Marlino, Alan Mantooth, Matt Francis, Ranjan Lamichhane, Paul Shepherd, Michael D. Glover
201422
19
Switching performance comparison of 1200 V and 1700 V SiC optimized half bridge power modules with SiC antiparallel schottky diodes versus MOSFET intrinsic body diodes
Daniel Martin, William Austin Curbow, Brett Sparkman, Lauren E. Kegley, Ty McNutt
201721
20
Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models
Ty McNutt, Allen R. Hefner, H. Alan Mantooth, J. Duliere, D.W. Berning, Ranbir Singh
200318

About Ty McNutt

Ty McNutt is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering, Automotive Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics, having authored 85 papers that have together received 1.7k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (79 papers), Semiconductor materials and devices (29 papers), Advanced DC-DC Converters (25 papers), Electromagnetic Compatibility and Noise Suppression (22 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Multilevel Inverters and Converters (16 papers), Silicon and Solar Cell Technologies (8 papers) and Electrostatic Discharge in Electronics (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Automotive Engineering (192 citations), Mechanical Engineering (198 citations), Ceramics and Composites (30 citations) and Condensed Matter Physics (56 citations). Ty McNutt has collaborated with scholars based in United States, Germany and Japan. Frequent co-authors include Alexander B. Lostetter, Allen R. Hefner, D.W. Berning, Brandon Passmore, H. Alan Mantooth, Zach Cole, Daniel Martin, Bret Whitaker, Sei‐Hyung Ryu and Adam Barkley. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Power Electronics, SAE technical papers on CD-ROM/SAE technical paper series, IEEE Transactions on Electron Devices and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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