Alma E. Wickenden

4.9k citations

110 papers · 4.3k · 1 hit paper · h-index 33

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 91
- GaN-based semiconductor devices and materials 91
Electronic, Optical and Magnetic Materials 40
- Ga2O3 and related materials 37

Co-authors: D. D. Koleske (45 shared papers)S.C. Binari (17 shared papers)R.L. Henry (19 shared papers)R. L. Henry (21 shared papers)Jaime A. Freitas (15 shared papers)M. E. Twigg (9 shared papers)Paul B. Klein (8 shared papers)Harry B. Dietrich (4 shared papers)
Journals: Applied Physics Letters (15 papers)Journal of Electronic Materials (9 papers)Journal of Applied Physics (8 papers)Journal of Crystal Growth (4 papers)Physica B Condensed Matter (3 papers)
Partner nations: United States Germany Poland

In The Last Decade

Alma E. Wickenden

110 papers receiving 4.1k citations

Alma E. Wickenden's Hit Papers

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs 2001 · 552 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2001 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by Alma E. Wickenden

Since Specialization

Citations

This map shows the geographic impact of Alma E. Wickenden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alma E. Wickenden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alma E. Wickenden more than expected).

Fields of papers citing papers by Alma E. Wickenden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alma E. Wickenden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alma E. Wickenden. The network helps show where Alma E. Wickenden may publish in the future.

Co-authors

The 25 scholars most cited alongside Alma E. Wickenden, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Alma E. Wickenden Line = papers co-authored together Alma E. Wickenden links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 110 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Trapping effects and microwave power performance in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·S.C. Binari, Kiki Ikossi, J.A. Roussos, Walter Kruppa, Doewon Park, Harry B. Dietrich, D. D. Koleske, Alma E. Wickenden Hit paper breakdown →	2001	552
2	Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy Applied Physics Letters ·Paul B. Klein, S.C. Binari, Kiki Ikossi, Alma E. Wickenden, D. D. Koleske, R. L. Henry	2001	251
3	Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Journal of Crystal Growth ·D. D. Koleske, Alma E. Wickenden, R.L. Henry, M. E. Twigg	2002	242
4	GaN decomposition in H2 and N2 at MOVPE temperatures and pressures Journal of Crystal Growth ·D. D. Koleske, Alma E. Wickenden, R.L. Henry, James C. Culbertson, M. E. Twigg	2001	199
5	Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors Applied Physics Letters ·Paul B. Klein, Jaime A. Freitas, S.C. Binari, Alma E. Wickenden	1999	154
6	The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation Applied Surface Science ·Victor M. Bermudez, D. D. Koleske, Alma E. Wickenden	1998	145
7	Biosensor Technologies for Augmented Brain–Computer Interfaces in the Next Decades Proceedings of the IEEE ·Lun‐De Liao, Chin‐Teng Lin, Kaleb McDowell, Alma E. Wickenden, Klaus Gramann, Tzyy‐Ping Jung, Li‐Wei Ko, Jyh‐Yeong Chang	2012	142
8	Growth model for GaN with comparison to structural, optical, and electrical properties Journal of Applied Physics ·Daniel D. Koleske, Alma E. Wickenden, R. L. Henry, William J. DeSisto, R. J. Gorman	1998	137
9	GaN FETs for microwave and high-temperature applications Solid-State Electronics ·Steven C. Binari, Kathleen Doverspike, G. Kelner, Harry B. Dietrich, Alma E. Wickenden	1997	135
10	The growth and properties of Al and AlN films on GaN(0001)–(1×1) Journal of Applied Physics ·Victor M. Bermudez, T. Jung, Kathleen Doverspike, Alma E. Wickenden	1996	128
11	Fabrication and characterization of GaN FETs Solid-State Electronics ·S.C. Binari, Walter Kruppa, Harry B. Dietrich, G. Kelner, Alma E. Wickenden, Jaime A. Freitas	1997	122
12	Resistivity control in unintentionally doped GaN films grown by MOCVD Journal of Crystal Growth ·Alma E. Wickenden, D. D. Koleske, R.L. Henry, M. E. Twigg, Mohammad Hossein Fatemi	2003	98
13	Persistent photoconductivity in n-type GaN Applied Physics Letters ·Guy Beadie, William S. Rabinovich, Alma E. Wickenden, D. D. Koleske, S.C. Binari, Jaime A. Freitas	1997	79
14	Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors Electronics Letters ·Paul B. Klein, S.C. Binari, Kiki Ikossi-Anastasiou, Alma E. Wickenden, D. D. Koleske, R. L. Henry, Douglas Scott Katzer	2001	76
15	Enhanced GaN decomposition in H2 near atmospheric pressures Applied Physics Letters ·Daniel D. Koleske, Alma E. Wickenden, R.L. Henry, M. E. Twigg, James C. Culbertson, R. J. Gorman	1998	74
16	The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition Journal of Applied Physics ·Alma E. Wickenden, D. K. Wickenden, Thomas J. Kistenmacher	1994	69
17	Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress Applied Physics Letters ·Jeffrey A. Mittereder, S.C. Binari, Paul B. Klein, J.A. Roussos, Douglas Scott Katzer, David F. Storm, D. D. Koleske, Alma E. Wickenden	2003	68
18	Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors Journal of Applied Physics ·Paul B. Klein, S.C. Binari, Jaime A. Freitas, Alma E. Wickenden	2000	62
19	Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition Physical review. B, Condensed matter ·Evan R. Glaser, William E. Carlos, G. C. B. Braga, Jaime A. Freitas, William Moore, Benjamin V. Shanabrook, R. L. Henry, Alma E. Wickenden	2002	62
20	Electron Transport and Velocity Oscillations in a Carbon Nanotube IEEE Transactions on Nanotechnology ·Akin Akturk, Gary Pennington, Neil Goldsman, Alma E. Wickenden	2007	61

About Alma E. Wickenden

Alma E. Wickenden is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 110 papers that have together received 4.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (91 papers), Semiconductor materials and devices (40 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (32 papers), Semiconductor Quantum Structures and Devices (12 papers), Silicon Carbide Semiconductor Technologies (11 papers), Photocathodes and Microchannel Plates (11 papers) and Metal and Thin Film Mechanics (9 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.8k citations), Electrical and Electronic Engineering (2.3k citations), Atomic and Molecular Physics, and Optics (952 citations) and Materials Chemistry (1.4k citations). Alma E. Wickenden has collaborated with scholars based in United States, Germany and Poland. Frequent co-authors include D. D. Koleske, S.C. Binari, R.L. Henry, R. L. Henry, Jaime A. Freitas, M. E. Twigg, Paul B. Klein, Harry B. Dietrich, Kiki Ikossi and Daniel D. Koleske. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, Journal of Applied Physics, Journal of Crystal Growth and Physica B Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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