Bobby Brar

1.5k citations

53 papers · 1.2k · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 43
- Radio Frequency Integrated Circuit Design 24
- Advancements in Semiconductor Devices and Circuit Design 22
- Semiconductor materials and devices 6
- Photonic and Optical Devices 3
- Advanced Power Amplifier Design 3
Atomic and Molecular Physics, and Optics 8
- Semiconductor Quantum Structures and Devices 7
- Quantum and electron transport phenomena 2

Co-authors: Glen D. Wilk (5 shared papers)Alan Seabaugh (11 shared papers)Josh Bergman (15 shared papers)Gary Frazier (7 shared papers)Tom P. E. Broekaert (7 shared papers)Frank Morris (7 shared papers)Robert Milo Wallace (2 shared papers)John P. McCaffrey (1 shared paper)
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (4 papers)Solid-State Electronics (2 papers)Superlattices and Microstructures (2 papers)Surface Science (1 paper)
Partner nations: United States Germany France

In The Last Decade

Bobby Brar

53 papers receiving 1.2k citations

Peers

Countries citing papers authored by Bobby Brar

Since Specialization

Citations

This map shows the geographic impact of Bobby Brar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bobby Brar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bobby Brar more than expected).

Fields of papers citing papers by Bobby Brar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bobby Brar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bobby Brar. The network helps show where Bobby Brar may publish in the future.

Co-authors

The 25 scholars most cited alongside Bobby Brar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bobby Brar Line = papers co-authored together Bobby Brar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	SiO 2 film thickness metrology by x-ray photoelectron spectroscopy Applied Physics Letters ·John P. McCaffrey, Bobby Brar, Glen D. Wilk, Robert Milo Wallace, L. C. Feldman, Sing-Pin Tay +1 other	1997	198
2	A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-State Circuits ·Tom P. E. Broekaert, Bobby Brar, Jan P. A. van der Wagt, Alan Seabaugh, Frank Morris, T. S. Moise, Edward Beam, Gary Frazier	1998	176
3	Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field Physical review. B, Condensed matter ·Richard John Warburton, C. Gauer, A. Wixforth, J. P. Kotthaus, Bobby Brar, H. Kroemer	1996	79
4	Interband impact ionization by terahertz illumination of InAs heterostructures Applied Physics Letters ·Andrea G. Markelz, Naggi G. Asmar, Bobby Brar, Elisabeth G. Gwinn	1996	75
5	An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier IEEE Microwave and Wireless Components Letters ·J.B. Hacker, Josh Bergman, Gerard Sullivan, Christoph Kadow, Heng‐Kuang Lin, Arthur C. Gossard, Mark J. W. Rodwell, Bobby Brar +1 other	2004	65
6	InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers IEEE Transactions on Microwave Theory and Techniques ·Bob Yintat Ma, Josh Bergman, Jonathan B. Hacker, Gerard Sullivan, Bobby Brar +2 others	2006	58
7	Impact ionization in high performance AlGaN/GaN HEMTs Bobby Brar, Karim S. Boutros, R.E. DeWarnes, V. Tilak, R.J. Shealy, LESTER F. EASTMAN	2003	55
8	Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature IEEE Electron Device Letters ·Glen D. Wilk, Bobby Brar	1999	54
9	Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory Technical digest - International Electron Devices Meeting/Technical digest ·Alan Seabaugh, T.G.W. Blake, Bobby Brar, Tom P. E. Broekaert, Roger K. Lake, Frank Morris, Gary Frazier +1 other	2002	31
10	An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier IEEE MTT-S International Microwave Symposium digest ·J.B. Hacker, Josh Bergman, Gerard Sullivan, Christoph Kadow, Heng‐Kuang Lin, Arthur C. Gossard, Mark J. W. Rodwell, Bobby Brar +1 other	2005	31
11	Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology ·C. Gauer, J. Scriba, A. Wixforth, J. P. Kotthaus, C. R. Bolognesi, C. Nguyen, Bobby Brar, H. Kroemer	1994	29
12	Ultra high frequency static dividers < 150 GHz in a narrow mesa InGaAs/InP DHBT technology Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting ·Zach Griffith, M. Dablstrom, Mark J. W. Rodwell, Miguel E. Urteaga, R.L. Pierson, Petra V. Rowell, Bobby Brar, Sangmin Lee	2004	26
13	Resonant-tunneling mixed-signal circuit technology Solid-State Electronics ·Alan Seabaugh, Bobby Brar, Tom P. E. Broekaert, Frank Morris, P. van der Wagt, Gary Frazier	1999	24
14	A 204.8GHz Static Divide-by-8 Frequency Divider in 250nm InP HBT IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ·Zach Griffith, Miguel E. Urteaga, R.L. Pierson, Petra V. Rowell, Mark J. W. Rodwell, Bobby Brar	2010	24
15	RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits IEEE Electron Device Letters ·Josh Bergman, Jae Joon Chang, Babak Matinpour, Joy Laskar, N.M. Jokerst, M.A. Brooke, Bobby Brar, Edward Beam +1 other	1999	23
16	InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs Conference proceedings. ... International Conference on Indium Phosphide and Related Materials ·Josh Bergman, G.J. Sullivan, Bobby Brar, Christoph Kadow, Heng‐Kuang Lin, Arthur C. Gossard, Mark J. W. Rodwell +1 other	2003	23
17	Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator Applied Physics Letters ·D.-H. Kim, Jesús A. del Alamo, D.A. Antoniadis, J. Li, J. M. Kuo, Paul R. Pinsukanjana, Yung-Chung Kao, P. Chen	2012	23
18	Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias Conference digest ·Josh Bergman, Gerard Sullivan, Amal Ikhlassi, Bobby Brar, Christoph Kadow, Heng‐Kuang Lin, Arthur C. Gossard, Mark J. W. Rodwell +1 other	2004	20
19	A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter IEEE Gallium Arsenide Integrated Circuit Symposium (GaAs IC) ·Tom P. E. Broekaert, Bobby Brar, Jan P. A. van der Wagt, Alan Seabaugh, T. S. Moise, Frank Morris, Edward Beam, Gary Frazier	1997	14
20	$hbox n^+$ -InAs–InAlAs Recess Gate Technology for InAs-Channel Millimeter-Wave HFETs IEEE Transactions on Electron Devices ·Christoph Kadow, Mattias E. Dahlstrom, Jinho Bae, Heng‐Kuang Lin, Arthur C. Gossard, Mark J. W. Rodwell, Bobby Brar, Gerard Sullivan	2005	13

About Bobby Brar

Bobby Brar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Biomedical Engineering and Surfaces, Coatings and Films, having authored 53 papers that have together received 1.2k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (24 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor Quantum Structures and Devices (7 papers), Semiconductor materials and devices (6 papers), Analog and Mixed-Signal Circuit Design (4 papers), Photonic and Optical Devices (3 papers), Advanced Power Amplifier Design (3 papers) and Quantum and electron transport phenomena (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (866 citations), Condensed Matter Physics (116 citations), Atomic and Molecular Physics, and Optics (286 citations), Surfaces, Coatings and Films (59 citations) and Materials Chemistry (71 citations). Bobby Brar has collaborated with scholars based in United States, Germany and France. Frequent co-authors include Glen D. Wilk, Alan Seabaugh, Josh Bergman, Gary Frazier, Tom P. E. Broekaert, Frank Morris, Robert Milo Wallace, John P. McCaffrey, L. C. Feldman and Edward Beam. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, Superlattices and Microstructures and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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