A.G. O’Neill

3.4k citations

212 papers · 2.7k · h-index 27

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 182
- Semiconductor materials and devices 124
- Advancements in Semiconductor Devices and Circuit Design 90
- Silicon Carbide Semiconductor Technologies 61
- Integrated Circuits and Semiconductor Failure Analysis 40
- Silicon and Solar Cell Technologies 19
Atomic and Molecular Physics, and Optics 43
- Semiconductor materials and interfaces 32

Co-authors: K.S.K. Kwa (27 shared papers)Nicolas G. Wright (59 shared papers)Sarah H. Olsen (59 shared papers)C. Mark Johnson (34 shared papers)Alton B. Horsfall (49 shared papers)Nikhil Ponon (10 shared papers)Daniel J. R. Appleby (5 shared papers)Konstantin Vassilevski (27 shared papers)
Journals: Journal of Applied Physics (26 papers)IEEE Transactions on Electron Devices (20 papers)Solid-State Electronics (15 papers)Materials Science and Engineering B (9 papers)Semiconductor Science and Technology (8 papers)
Partner nations: United Kingdom Australia Belgium

In The Last Decade

A.G. O’Neill

201 papers receiving 2.6k citations

Peers

Countries citing papers authored by A.G. O’Neill

Since Specialization

Citations

This map shows the geographic impact of A.G. O’Neill's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.G. O’Neill with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.G. O’Neill more than expected).

Fields of papers citing papers by A.G. O’Neill

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.G. O’Neill. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.G. O’Neill. The network helps show where A.G. O’Neill may publish in the future.

Co-authors

The 25 scholars most cited alongside A.G. O’Neill, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A.G. O’Neill Line = papers co-authored together A.G. O’Neill links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 212 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature Nano Letters ·Daniel J. R. Appleby, Nikhil Ponon, K.S.K. Kwa, Bin Zou, Peter K. Petrov, Tianle Wang, Neil McN. Alford, A.G. O’Neill	2014	207
2	Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films Thin Solid Films ·Nikhil Ponon, Daniel J. R. Appleby, Erhan Arac, P King, Srinivas Ganti, K.S.K. Kwa, A.G. O’Neill	2015	171
3	Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide Journal of Applied Physics ·И.П. Никитина, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall, A.G. O’Neill, C. Mark Johnson	2005	125
4	Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation IEEE Transactions on Electron Devices ·C. Fiegna, Yang Yang, E. Sangiorgi, A.G. O’Neill	2008	122
5	High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture IEEE Transactions on Electron Devices ·Sarah H. Olsen, A.G. O’Neill, L.S. Driscoll, K.S.K. Kwa, Sanatan Chattopadhyay, A.M. Waite, Y.T. Tang, A G R Evans, David J. Norris, A.G. Cullis, Douglas J. Paul, David J. Robbins	2003	72
6	Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs IEEE Transactions on Electron Devices ·Goutam Kumar Dalapati, Sanatan Chattopadhyay, K.S.K. Kwa, Sarah H. Olsen, Parker Y. L. Tsang, R. Agaiby, A.G. O’Neill, P. Dobrosz, S.J. Bull	2006	65
7	Deep submicron CMOS based on silicon germanium technology IEEE Transactions on Electron Devices ·A.G. O’Neill, D.A. Antoniadis	1996	63
8	Pediatric Trampoline Injuries Journal of Pediatric Orthopaedics ·Conor Hurson, Kath Browne, O. Callender, Turlough O'Donnell, A.G. O’Neill, D. Moore, Esmond E. Fogarty, Francis E. Dowling	2007	55
9	Mechanical Flexibility Reduces the Foreign Body Response to Long-Term Implanted Microelectrodes in Rabbit Cortex PLoS ONE ·Harbaljit S. Sohal, Gavin J. Clowry, Andrew Jackson, A.G. O’Neill, Stuart N. Baker	2016	54
10	Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing Semiconductor Science and Technology ·Konstantin Vassilevski, Nicolas G. Wright, И.П. Никитина, Alton B. Horsfall, A.G. O’Neill, Michael J. Uren, K.P. Hilton, A. Masterton, A.J. Hydes, C. Mark Johnson	2005	53
11	A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor Journal of Applied Physics ·Shahin A. Mojarad, K.S.K. Kwa, Jonathan P. Goss, Zhiyong Zhou, Nikhil Ponon, Daniel J. R. Appleby, Raied Al-hamadany, A.G. O’Neill	2012	49
12	A new version of crystal field theory and its application to ZnSe: Co Solid State Communications ·A.G. O’Neill, J. W. Allen	1983	48
13	Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO₂/ Al₂O₃Gate Stack IEEE Electron Device Letters ·Faiz Arith, J. Urresti, Konstantin Vasilevskiy, Sarah H. Olsen, Nicolas G. Wright, A.G. O’Neill	2018	36
14	Device and circuit performance of SiGe/Si MOSFETs Solid-State Electronics ·S.G. Badcock, A.G. O’Neill, E.G. Chester	2002	34
15	A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors IEEE Transactions on Electron Devices ·Marco De Michielis, David Esseni, Parker Y. L. Tsang, Pierpaolo Palestri, L. Selmi, A.G. O’Neill, Sanatan Chattopadhyay	2007	34
16	Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition Journal of Applied Physics ·Daniel J. R. Appleby, Nikhil Ponon, K.S.K. Kwa, Srinivas Ganti, U. Hannemann, Peter K. Petrov, Neil McN. Alford, A.G. O’Neill	2014	33
17	A new model for the diffusion of arsenic in polycrystalline silicon Journal of Applied Physics ·A.G. O’Neill, Chris Hill, John R. King, Colin P. Please	1988	31
18	Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Kirsten E. Moselund, P. Dobrosz, Sarah H. Olsen, V. Pott, Luca De Michielis, Dimitrios Tsamados, D. Bouvet, A.G. O’Neill, Adrian M. Ionescu	2007	31
19	Top-down fabrication of single crystal silicon nanowire using optical lithography Journal of Applied Physics ·Nor Farahidah Za’bah, K.S.K. Kwa, Leon Bowen, Budhika G. Mendis, A.G. O’Neill	2012	29
20	Reduced self-heating by strained silicon substrate engineering Applied Surface Science ·A.G. O’Neill, R. Agaiby, Sarah H. Olsen, Yanbin Yang, Per‐Erik Hellström, Mikael Östling, Michael Oehme, K. Lyutovich, E. Kasper, Geert Eneman, P. Verheyen, Roger Loo, C. Claeys, C. Fiegna, E. Sangiorgi	2008	29

About A.G. O’Neill

A.G. O’Neill is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 212 papers that have together received 2.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (124 papers), Advancements in Semiconductor Devices and Circuit Design (90 papers), Silicon Carbide Semiconductor Technologies (61 papers), Integrated Circuits and Semiconductor Failure Analysis (40 papers), Semiconductor materials and interfaces (32 papers), Copper Interconnects and Reliability (22 papers), Silicon and Solar Cell Technologies (19 papers) and Nanowire Synthesis and Applications (18 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.2k citations), Atomic and Molecular Physics, and Optics (589 citations), Materials Chemistry (709 citations), Electronic, Optical and Magnetic Materials (276 citations) and Biomedical Engineering (449 citations). A.G. O’Neill has collaborated with scholars based in United Kingdom, Australia and Belgium. Frequent co-authors include K.S.K. Kwa, Nicolas G. Wright, Sarah H. Olsen, C. Mark Johnson, Alton B. Horsfall, Nikhil Ponon, Daniel J. R. Appleby, Konstantin Vassilevski, Sanatan Chattopadhyay and D.A. Antoniadis. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices, Solid-State Electronics, Materials Science and Engineering B and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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A.G. O’Neill

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