В.С. Першенков

626 citations
66 papers · 501 · h-index 13

Impact in

  • Electrical and Electronic Engineering top 10%
    • Radiation Effects in Electronics
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Advanced Memory and Neural Computing
  • Hardware and Architecture top 10%
    • VLSI and Analog Circuit Testing

Papers in

  • Electrical and Electronic Engineering 51
    • Semiconductor materials and devices 40
    • Advancements in Semiconductor Devices and Circuit Design 28
    • Radiation Effects in Electronics 27
    • Integrated Circuits and Semiconductor Failure Analysis 12
    • Advanced Memory and Neural Computing 6
  • Biomedical Engineering 10
    • Advanced Chemical Sensor Technologies 9
Co-authors
V.V. Belyakov (41 shared papers)Armen V. Sogoyan (13 shared papers)A.Y. Nikiforov (7 shared papers)A. I. Chumakov (6 shared papers)Gennady I. Zebrev (8 shared papers)Dmitry V. Boychenko (2 shared papers)Alexander Y. Nikiforov (1 shared paper)А. В. Головин (6 shared papers)
Journals
IEEE Transactions on Nuclear Science (15 papers)Microelectronics Reliability (9 papers)International Journal of Nanotechnology (1 paper)European Journal of Mass Spectrometry (1 paper)Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (1 paper)
Partner nations
RussiaRomaniaChina

In The Last Decade

В.С. Першенков

63 papers receiving 462 citations

Peers

В.С. Першенков
Comparison fields: 5 of 60
  • Electrical and Electronic Engineering 427
  • Hardware and Architecture 45
  • Radiation 32
  • Spectroscopy 33
  • Nuclear and High Energy Physics 23
Replace V.V. Belyakov with:
V.V. Belyakov Russia
R.L. Pease United States
C. Chatry France
K. Tittelbach‐Helmrich Germany
Maud Baylac France
Nathaniel A. Dodds United States
N. Buard France
S. M. Guertin United States
George N. Tzintzarov United States
C.I. Lee United States
В.С. Першенков relative to V.V. Belyakov Russia V.V. Belyakov's profile →
Citations per field
00.5×1.5×2.1×
V.V. Belyakov · 1×
Citations per year

Countries citing papers authored by В.С. Першенков

Since Specialization
Citations

This map shows the geographic impact of В.С. Першенков's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В.С. Першенков with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В.С. Першенков more than expected).

Fields of papers citing papers by В.С. Першенков

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В.С. Першенков. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В.С. Першенков. The network helps show where В.С. Першенков may publish in the future.

Co-authors

The 25 scholars most cited alongside В.С. Першенков, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with В.С. Першенков Line = papers co-authored together В.С. Першенков links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#Work
1
The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices
IEEE Transactions on Nuclear Science ·В.С. Першенков, V.B. Maslov, S.V. Cherepko, I.N. Shvetzov-Shilovsky, V.V. Belyakov, Armen V. Sogoyan, V.I. Rusanovsky, V.N. Ulimov, В. В. Емельянов, V.S. Nasibullin
199744
2
Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors
IEEE Transactions on Nuclear Science ·V.V. Belyakov, В.С. Першенков, A.V. Shal'nov, I.N. Shvetzov-Shilovsky
199540
3
Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment
IEEE Transactions on Nuclear Science ·Gennady I. Zebrev, D.Y. Pavlov, В.С. Першенков, A.Y. Nikiforov, Armen V. Sogoyan, Dmitry V. Boychenko, V.N. Ulimov, V. V. Emelyanov
200625
4
The conversion model of low dose rate effect in bipolar transistors
В.С. Першенков, D. V. Savchenkov, Alexander S. Bakerenkov, V.N. Ulimov, A.Y. Nikiforov, A. I. Chumakov, А. А. Романенко
200922
5
Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review
Russian Microelectronics ·V.V. Belyakov, В.С. Першенков, Gennady I. Zebrev, Armen V. Sogoyan, A. I. Chumakov, A.Y. Nikiforov, П. К. Скоробогатов
200320
6
Electromagnetic pulse effects and damage mechanism on the semiconductor electronics
Facta universitatis - series Electronics and Energetics ·V.V. Shurenkov, В.С. Першенков
201619
7
Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices
IEEE Transactions on Nuclear Science ·В. В. Емельянов, Armen V. Sogoyan, O.V. Meshurov, V.N. Ulimov, В.С. Першенков
199619
8
IC’s radiation effects modeling and estimation
Microelectronics Reliability ·V.V. Belyakov, A. I. Chumakov, A.Y. Nikiforov, В.С. Першенков, П. К. Скоробогатов, Armen V. Sogoyan
200018
9
Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs
Russian Microelectronics ·В.С. Першенков, D. V. Savchenkov, Alexander S. Bakerenkov, V.N. Ulimov
201017
10
Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures
IEEE Transactions on Nuclear Science ·В.С. Першенков, S.V. Cherepko, Armen V. Sogoyan, V.V. Belyakov, V.N. Ulimov, V.V. Abramov, A.V. Shal'nov, V.I. Rusanovsky
199617
11
X-ray ion mobility spectrometer
Microelectronics Reliability ·В.С. Першенков, A.D. Tremasov, V.V. Belyakov, A.U. Razvalyaev, V. S. Mochkin
200516
12
Interface trap model for the low-dose-rate effect in bipolar devices
В.С. Першенков, K.A. Chumakov, Alexander Y. Nikiforov, A. I. Chumakov, V.N. Ulimov, А. А. Романенко
200714
13
Three-point method of prediction of MOS device response in space environments
IEEE Transactions on Nuclear Science ·В.С. Першенков, V.V. Belyakov, S.V. Cherepko, I.N. Shvetzov-Shilovsky
199313
14
Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment
Gennady I. Zebrev, D.Y. Pavlov, В.С. Першенков, A.Y. Nikiforov, Armen V. Sogoyan, Dmitry V. Boychenko, V.N. Ulimov, V. V. Emelyanov
200512
15
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses
IEEE Transactions on Nuclear Science ·В. В. Емельянов, Gennady I. Zebrev, V.N. Ulimov, Rustem G. Useinov, V.V. Belyakov, В.С. Першенков
199611
16
The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation
Russian Microelectronics ·Armen V. Sogoyan, S.V. Cherepko, В.С. Першенков
201410
17
Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation
Russian Microelectronics ·V.V. Belyakov, A. I. Chumakov, A.Y. Nikiforov, В.С. Першенков, П. К. Скоробогатов, Armen V. Sogoyan
200310
18
Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures
IEEE Transactions on Nuclear Science ·В.С. Першенков, V.V. Belyakov, A.V. Shal'nov
199410
19
Thermal- and radiation-induced interface traps in MOS devices
Armen V. Sogoyan, S.V. Cherepko, В.С. Першенков, V. I. Rogov, V.N. Ulimov, В. В. Емельянов
200210
20
Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices
Russian Microelectronics ·Alexander S. Bakerenkov, V.V. Belyakov, В.С. Першенков, А. А. Романенко, D. V. Savchenkov, V.V. Shurenkov
20139

About В.С. Першенков

В.С. Першенков is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Spectroscopy, Radiation and Materials Chemistry, having authored 66 papers that have together received 501 indexed citations. Recurring topics across this work include Semiconductor materials and devices (40 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers), Radiation Effects in Electronics (27 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Advanced Chemical Sensor Technologies (9 papers), Mass Spectrometry Techniques and Applications (8 papers), Advanced Memory and Neural Computing (6 papers) and Ion-surface interactions and analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (427 citations), Hardware and Architecture (45 citations), Radiation (32 citations), Spectroscopy (33 citations) and Nuclear and High Energy Physics (23 citations). В.С. Першенков has collaborated with scholars based in Russia, Romania and China. Frequent co-authors include V.V. Belyakov, Armen V. Sogoyan, A.Y. Nikiforov, A. I. Chumakov, Gennady I. Zebrev, Dmitry V. Boychenko, Alexander Y. Nikiforov, А. В. Головин, Philipp Kopylov and Nikolay Samotaev. Their work appears in journals such as IEEE Transactions on Nuclear Science, Microelectronics Reliability, International Journal of Nanotechnology, European Journal of Mass Spectrometry and Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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