Thomas Melde

996 citations
23 papers · 862 · 1 hit paper · h-index 9

Impact in

    • Ferroelectric and Negative Capacitance Devices
    • Semiconductor materials and devices
    • Advanced Memory and Neural Computing
    • Advancements in Semiconductor Devices and Circuit Design
    • MXene and MAX Phase Materials
    • Ferroelectric and Piezoelectric Materials
    • Electronic and Structural Properties of Oxides

Papers in

Thomas Melde

23 papers receiving 838 citations

Thomas Melde's Hit Papers

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond 2017 · 462 citations
4620+3+6Years since publication100200300400

Peers

Thomas Melde
Comparison fields: 5 of 28
  • Electrical and Electronic Engineering 833
  • Materials Chemistry 419
  • Hardware and Architecture 18
  • Computer Networks and Communications 34
  • Artificial Intelligence 29
Replace D. A. Lohr with:
D. A. Lohr Germany
Peter Moll Germany
Christine Fuchs France
Jan Paul Germany
Jan Höntschel Germany
A. Subirats Belgium
Pengpeng Ren China
Matthew San Jose United States
Narendra Parihar India
Girish Pahwa India
Thomas Melde relative to D. A. Lohr Germany D. A. Lohr's profile →
Citations per field
00.5×2×4×6×8×
D. A. Lohr · 1×
Citations per year

Countries citing papers authored by Thomas Melde

Since Specialization
Citations

This map shows the geographic impact of Thomas Melde's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Melde with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Melde more than expected).

Fields of papers citing papers by Thomas Melde

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Melde. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Melde. The network helps show where Thomas Melde may publish in the future.

Co-authors

The 25 scholars most cited alongside Thomas Melde, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Thomas Melde Line = papers co-authored together Thomas Melde links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 23 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Hit paper breakdown →
2017462
2 2012177
3 201966
4 202042
5 200616
6 201915
7 201012
8 200811
9 200711
10 20086
11 20096
12 20096
13 20085
14 20095
15 20204
16 20084
17 20193
18 20102
19 20092
20 20212

About Thomas Melde

Thomas Melde is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications, Hardware and Architecture, Materials Chemistry and Computational Theory and Mathematics, having authored 23 papers that have together received 862 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Advanced Memory and Neural Computing (7 papers), Advanced Data Storage Technologies (6 papers), Electronic and Structural Properties of Oxides (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and MXene and MAX Phase Materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (833 citations), Materials Chemistry (419 citations), Hardware and Architecture (18 citations), Computer Networks and Communications (34 citations) and Artificial Intelligence (29 citations). Thomas Melde has collaborated with scholars based in Germany, Austria and United States. Frequent co-authors include Thomas Mikolajick, Johannes Müller, Steve Knebel, Andrew Graham, U. Schröder, Ekaterina Yurchuk, Jonas Sundqvist, Sven Beyer, Stefan Dünkel and Martin Trentzsch. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Thin Solid Films, IEEE Journal of the Electron Devices Society and IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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