S.T. Liu

614 citations

42 papers · 456 · h-index 10

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Gas Sensing Nanomaterials and Sensors
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 29
- Advancements in Semiconductor Devices and Circuit Design 23
- Integrated Circuits and Semiconductor Failure Analysis 21
- Radiation Effects in Electronics 15
- Silicon and Solar Cell Technologies 3
Materials Chemistry 6

Co-authors: Donald Long (1 shared paper)H.L. Hughes (9 shared papers)Soumendu Sinha (2 shared papers)S. Balster (2 shared papers)A. van der Ziel (4 shared papers)R. Weimer (2 shared papers)J. P. Campbell (2 shared papers)O. N. Tufte (2 shared papers)
Journals: IEEE Transactions on Nuclear Science (11 papers)Solid-State Electronics (6 papers)Solar Energy Materials and Solar Cells (1 paper)Proceedings of the IEEE (1 paper)Materials Science in Semiconductor Processing (1 paper)
Partner nations: United States China Netherlands

In The Last Decade

S.T. Liu

35 papers receiving 431 citations

Peers

Countries citing papers authored by S.T. Liu

Since Specialization

Citations

This map shows the geographic impact of S.T. Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.T. Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.T. Liu more than expected).

Fields of papers citing papers by S.T. Liu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.T. Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.T. Liu. The network helps show where S.T. Liu may publish in the future.

Co-authors

The 25 scholars most cited alongside S.T. Liu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.T. Liu Line = papers co-authored together S.T. Liu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Pyroelectric detectors and materials Proceedings of the IEEE ·S.T. Liu, Donald Long	1978	137
2	Radiation response of fully-depleted MOS transistors fabricated in SIMOX IEEE Transactions on Nuclear Science ·W.C. Jenkins, S.T. Liu	1994	46
3	Worst case total dose radiation response of 0.35 /spl mu/m SOI CMOSFETs IEEE Transactions on Nuclear Science ·S.T. Liu, S. Balster, Soumendu Sinha, W.C. Jenkins	1999	46
4	Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology IEEE Transactions on Nuclear Science ·S.T. Liu, W.C. Jenkins, H.L. Hughes	1998	44
5	Radiation-induced leakage currents: atomic scale mechanisms IEEE Transactions on Nuclear Science ·R.M. Lenahan, J. P. Campbell, A.Y. Kang, S.T. Liu, R. Weimer	2001	19
6	Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX/sup TM/ substrates IEEE Transactions on Nuclear Science ·S.T. Liu, L.P. Allen, M.J. Anc, W.C. Jenkins, H.L. Hughes, M. E. Twigg, R.K. Lawrence	1997	17
7	Comparison of two noise models in MOSFETs Solid-State Electronics ·H.S. Park, A. van der Ziel, S.T. Liu	1982	16
8	Proton-induced upset in SOI CMOS SRAMS IEEE Transactions on Nuclear Science ·S.T. Liu, H.Y. Liu, David K. Anthony, W.W. Heikkila, H.L. Hughes, A.B. Campbell, E.L. Petersen, P. J. McMarr	2004	13
9	The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments Solid-State Electronics ·Ying Li, Guofu Niu, John D. Cressler, Jagdish Patel, S.T. Liu, Robert A. Reed, Mohammad Mojarradi, Benjamin J. Blalock	2003	12
10	A 5 nm nitrided gate oxide for 0.25 /spl mu/m SOI CMOS technologies IEEE Transactions on Nuclear Science ·S.T. Liu, P. Fechner, S. Balster, G. Dougal, Soumendu Sinha, H. Chen, Ghing-Hao Shaw, Jin Yue, W.C. Jenkins, H.L. Hughes	1999	9
11	Fast turn characterization of SIMOX wafers S.T. Liu, P. Fechner, R.L. Roisen	2002	9
12	Proton induced single event upset in a 4M SOI SRAM H. Y. Liu, S.T. Liu, K.W. Golke, D. Nelson, W.W. Heikkila, W.C. Jenkins	2003	8
13	Single event effects in PDSOI 4 M SRAM fabricated in UNIBOND IEEE Transactions on Nuclear Science ·S.T. Liu, W.W. Heikkila, K.W. Golke, David K. Anthony, A. Hurst, G.D. Kirchner, W.C. Jenkins, H.L. Hughes, Subhasish Mitra, D.E. Ioannou	2003	6
14	Hot electron noise effects in buried channel MOSFETs Solid-State Electronics ·S.K. Kim, A. van der Ziel, S.T. Liu	1981	6
15	Noise in phosphorus-implanted buried channel MOS transistors Solid-State Electronics ·S.T. Liu, O. N. Tufte, A. van der Ziel, S. Y. Pai, W.L. Larson	1980	6
16	Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs Solid-State Electronics ·Dimitris P. Ioannou, Rahul Mishra, D.E. Ioannou, S.T. Liu, H.L. Hughes	2006	5
17	Alternate explanation of noise in ion-implanted MOSFETs Solid-State Electronics ·A. van der Ziel, R.J.J. Zijlstra, H.S. Park, S.T. Liu	1983	5
18	Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents Patrick M. Lenahan, J.J. Mele, J. P. Campbell, A.Y. Kang, Robert K. Lowry, Daniel Woodbury, S.T. Liu, R. Weimer	2002	5
19	The Pyroelectric Properties of the Lanthanum-Doped Ferroelectric PLZT Ceramics IEEE Transactions on Sonics and Ultrasonics ·S.T. Liu, J. D. Heaps, O. N. Tufte	1972	5
20	NBTI in SOI p-Channel MOS Field Effect Transistors S.T. Liu, D.E. Ioannou, Dimitris P. Ioannou, M. Flanery, H.L. Hughes	2006	5

About S.T. Liu

S.T. Liu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Hardware and Architecture, having authored 42 papers that have together received 456 indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers), Radiation Effects in Electronics (15 papers), Acoustic Wave Resonator Technologies (3 papers), Silicon and Solar Cell Technologies (3 papers), Nanowire Synthesis and Applications (2 papers) and VLSI and Analog Circuit Testing (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (383 citations), Hardware and Architecture (16 citations), Atomic and Molecular Physics, and Optics (56 citations), Biomedical Engineering (79 citations) and Materials Chemistry (80 citations). S.T. Liu has collaborated with scholars based in United States, China and Netherlands. Frequent co-authors include Donald Long, H.L. Hughes, Soumendu Sinha, S. Balster, A. van der Ziel, R. Weimer, J. P. Campbell, O. N. Tufte, M. E. Twigg and Guofu Niu. Their work appears in journals such as IEEE Transactions on Nuclear Science, Solid-State Electronics, Solar Energy Materials and Solar Cells, Proceedings of the IEEE and Materials Science in Semiconductor Processing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.T. Liu

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