Patrick Fiorenza

4.1k citations

169 papers · 3.2k · 1 hit paper · h-index 29

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 152
- Semiconductor materials and devices 120
- Silicon Carbide Semiconductor Technologies 102
- Advancements in Semiconductor Devices and Circuit Design 20
Atomic and Molecular Physics, and Optics 47
- Semiconductor materials and interfaces 42

Co-authors: Fabrizio Roccaforte (114 shared papers)Filippo Giannazzo (87 shared papers)Giuseppe Greco (55 shared papers)Raffaella Lo Nigro (59 shared papers)Ferdinando Iucolano (17 shared papers)Mario Saggio (22 shared papers)V. Raineri (33 shared papers)Marilena Vivona (24 shared papers)
Journals: Applied Physics Letters (20 papers)Applied Surface Science (9 papers)Materials Science in Semiconductor Processing (9 papers)Journal of Applied Physics (8 papers)Materials (6 papers)
Partner nations: Italy Czechia Switzerland

In The Last Decade

Patrick Fiorenza

161 papers receiving 3.1k citations

Patrick Fiorenza's Hit Papers

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Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices 2017 · 442 citations

Peers

Countries citing papers authored by Patrick Fiorenza

Since Specialization

Citations

This map shows the geographic impact of Patrick Fiorenza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Fiorenza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Fiorenza more than expected).

Fields of papers citing papers by Patrick Fiorenza

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Fiorenza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Fiorenza. The network helps show where Patrick Fiorenza may publish in the future.

Co-authors

The 25 scholars most cited alongside Patrick Fiorenza, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Patrick Fiorenza Line = papers co-authored together Patrick Fiorenza links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 169 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices Microelectronic Engineering ·Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio Hit paper breakdown →	2017	442
2	An Overview of Normally-Off GaN-Based High Electron Mobility Transistors Materials ·Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano	2019	221
3	Recent advances on dielectrics technology for SiC and GaN power devices Applied Surface Science ·Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio	2014	131
4	Challenges for energy efficient wide band gap semiconductor power devices physica status solidi (a) ·Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio	2014	114
5	Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review Energies ·Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte	2019	99
6	SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 Applied Physics Letters ·Patrick Fiorenza, Filippo Giannazzo, Marilena Vivona, Antonino La Magna, Fabrizio Roccaforte	2013	69
7	Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors Applied Physics Letters ·Alessia Frazzetto, Filippo Giannazzo, Patrick Fiorenza, V. Raineri, Fabrizio Roccaforte	2011	59
8	Selective Doping in Silicon Carbide Power Devices Materials ·Fabrizio Roccaforte, Patrick Fiorenza, Marilena Vivona, Giuseppe Greco, Filippo Giannazzo	2021	58
9	Critical issues for interfaces to p-type SiC and GaN in power devices Applied Surface Science ·Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Raffaella Lo Nigro, Mario Saggio, M. Leszczyński, P. Pristawko, V. Raineri	2012	54
10	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC AIP Advances ·Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte	2016	49
11	Interface Electrical Properties of Al₂O₃ Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer ACS Applied Materials & Interfaces ·G. Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, S. Ravesi, Filippo Giannazzo	2017	47
12	Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3 Applied Physics Letters ·Lukas K. Swanson, Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte	2012	46
13	Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors Applied Physics Letters ·Patrick Fiorenza, Alessia Frazzetto, (unknown), Mario Saggio, Fabrizio Roccaforte	2014	45
14	Localized electrical characterization of the giant permittivity effect in CaCu3Ti4O12 ceramics Applied Physics Letters ·Patrick Fiorenza, Raffaella Lo Nigro, Corrado Bongiorno, V. Raineri, Matthew C. Ferarrelli, Derek C. Sinclair, Anthony R. West	2008	43
15	Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures Applied Physics Letters ·Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, V. Raineri, Graziella Malandrino, Raffaella Lo Nigro	2012	43
16	Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂as Gate Insulator IEEE Transactions on Electron Devices ·Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte	2017	40
17	Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3 Applied Physics A ·Patrick Fiorenza, Lukas K. Swanson, Marilena Vivona, Filippo Giannazzo, Corrado Bongiorno, Alessia Frazzetto, Fabrizio Roccaforte	2013	37
18	Conductive atomic force microscopy studies of thin SiO2 layer degradation Applied Physics Letters ·Patrick Fiorenza, W. Polspoel, Wilfried Vandervorst	2006	34
19	Calcium Copper−Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects The Journal of Physical Chemistry B ·Raffaella Lo Nigro, Roberta G. Toro, Graziella Malandrino, Ignazio L. Fragalà, María Losurdo, (unknown), Giovanni Bruno, V. Raineri, Patrick Fiorenza	2006	33
20	Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures Applied Physics Letters ·Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte	2012	32

About Patrick Fiorenza

Patrick Fiorenza is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 169 papers that have together received 3.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (120 papers), Silicon Carbide Semiconductor Technologies (102 papers), Semiconductor materials and interfaces (42 papers), GaN-based semiconductor devices and materials (37 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Ferroelectric and Piezoelectric Materials (19 papers), Dielectric properties of ceramics (17 papers) and Copper Interconnects and Reliability (17 papers). The work is most often cited by research in Condensed Matter Physics (901 citations), Electronic, Optical and Magnetic Materials (856 citations), Electrical and Electronic Engineering (2.5k citations), Materials Chemistry (1.0k citations) and Atomic and Molecular Physics, and Optics (618 citations). Patrick Fiorenza has collaborated with scholars based in Italy, Czechia and Switzerland. Frequent co-authors include Fabrizio Roccaforte, Filippo Giannazzo, Giuseppe Greco, Raffaella Lo Nigro, Ferdinando Iucolano, Mario Saggio, V. Raineri, Marilena Vivona, Alessia Frazzetto and Emanuela Schilirò. Their work appears in journals such as Applied Physics Letters, Applied Surface Science, Materials Science in Semiconductor Processing, Journal of Applied Physics and Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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