S. Bodnar

628 citations

33 papers · 529 · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 32
- Semiconductor materials and devices 15
- Silicon and Solar Cell Technologies 10
- Chalcogenide Semiconductor Thin Films 8
- Advancements in Semiconductor Devices and Circuit Design 6
- Thin-Film Transistor Technologies 6
Atomic and Molecular Physics, and Optics 15
- Semiconductor materials and interfaces 14

Co-authors: J.L. Regolini (18 shared papers)P. Boucaud (8 shared papers)D. Bouchier (8 shared papers)F. H. Julien (5 shared papers)B. Lambert (2 shared papers)Colin G. Francis (2 shared papers)C. Broussillou (5 shared papers)Jean–Michel Lourtioz (3 shared papers)
Journals: Thin Solid Films (5 papers)Applied Physics Letters (4 papers)Journal of Crystal Growth (2 papers)Materials Science in Semiconductor Processing (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
Partner nations: France United States Israel

In The Last Decade

S. Bodnar

32 papers receiving 517 citations

Peers

Countries citing papers authored by S. Bodnar

Since Specialization

Citations

This map shows the geographic impact of S. Bodnar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Bodnar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Bodnar more than expected).

Fields of papers citing papers by S. Bodnar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Bodnar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Bodnar. The network helps show where S. Bodnar may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Bodnar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Bodnar Line = papers co-authored together S. Bodnar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 33 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Band-edge and deep level photoluminescence of pseudomorphic Si1−x−yGexCy alloys Applied Physics Letters ·P. Boucaud, Colin G. Francis, F. H. Julien, Jean–Michel Lourtioz, D. Bouchier, S. Bodnar, B. Lambert, J.L. Regolini	1994	84
2	Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Bodnar, E. de Berranger, Pierre Bouillon, M. Mouis, T. Skotnicki, J.L. Regolini	1997	55
3	High density platinum nanocrystals for non-volatile memory applications Applied Physics Letters ·J. Dufourcq, S. Bodnar, Guillaume Gay, D. Lafond, P. Mur, G. Molas, J. P. Nieto, L. Vandroux, L. Jodin, F. Gustavo, T. Baron	2008	50
4	Photoluminescence of strained Si1−yCy alloys grown at low temperature Applied Physics Letters ·P. Boucaud, Colin G. Francis, A. Larré, F. H. Julien, J.-M. Lourtioz, D. Bouchier, S. Bodnar, J.L. Regolini	1995	40
5	Strain compensated heterostructures in the Si1−x−yGexCy ternary system Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J.L. Regolini, S. Bodnar, J.C. Oberlin, F. Ferrieu, M. Gauneau, B. Lambert, P. Boucaud	1994	37
6	Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment Applied Physics Letters ·Carmen M. Ruiz, Xavier Fontané, Andrew Fairbrother, Víctor Izquierdo‐Roca, C. Broussillou, S. Bodnar, A. Pérez-Rodrı́guez, V. Bermúdez	2013	33
7	Growth of ternary alloy Si1−x−yGexCy by rapid thermal chemical vapor deposition Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·S. Bodnar, J.L. Regolini	1995	29
8	Statistical Process Control for Cu(In,Ga)(S,Se)2 electrodeposition-based manufacturing process of 60×120cm2 modules up to 14,0% efficiency C. Broussillou, C. Viscogliosi, A. Rogee, S. Angle, P. Grand, S. Bodnar, C. Débauche, J.-L. Allary, Brian P. Bertrand, C. Guillou, L. Parissi, S. Coletti	2015	28
9	Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors Thin Solid Films ·Florian Oliva, C. Broussillou, M. Annibaliano, Nadia Frédérich, P. Grand, A. Roussy, P. Collot, S. Bodnar	2012	25
10	Sulfurization of Cu–In electrodeposited precursors for CuInS2-based solar cells Solar Energy Materials and Solar Cells ·C. Broussillou, M. Andrieux, M. Herbst‐Ghysel, Michel Jeandin, J.S. Jaime-Ferrer, S. Bodnar, E. Morin	2011	18
11	Local strains in Si1−x−yGexCy alloys as deduced from vibrational frequencies Thin Solid Films ·E. Finkman, H. Rücker, F. Meyer, Steven Prawer, D. Bouchier, J. Boulmer, S. Bodnar, J.L. Regolini	1997	17
12	Rapid thermal processing annealing challenges for large scale Cu₂ZnSnS₄thin films physica status solidi (a) ·Laura Vauche, (unknown), Aurélie Laparre, M. Pasquinelli, S. Bodnar, Pierre‐Philippe Grand, S. Jaime	2014	15
13	Schottky barrier heights on IV-IV compound semiconductors Journal of Electronic Materials ·F. Meyer, M. Mamor, V. Aubry-Fortuna, P. Warren, S. Bodnar, D. Dutartre, J.L. Regolini	1996	14
14	Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory Solid-State Electronics ·S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger, S. Deleonibus	2008	10
15	Growth of Si 1 − x − y Ge x C y multi-quantum wells: structural and optical properties Thin Solid Films ·P. Boucaud, C. Guedj, F. H. Julien, E. Finkman, S. Bodnar, J.L. Regolini	1996	8
16	Cu₂ZnSnSe₄ thin film solar cells above 5% conversion efficiency from electrodeposited Cu Sn Zn precursors physica status solidi (a) ·Laura Vauche, (unknown), Aurélie Laparre, Fabien Mollica, Romain Bodeux, Sébastien Delbos, Carmen M. Ruiz, M. Pasquinelli, Farid Bahi, Thomas Goislard de Monsabert, S. Jaime, S. Bodnar, Pierre‐Philippe Grand	2014	7
17	Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation Thin Solid Films ·M. Mamor, J.-L. Perrossier, V. Aubry-Fortuna, F. Meyer, D. Bouchier, S. Bodnar, J.L. Regolini	1997	7
18	What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds? Microelectronic Engineering ·V. Aubry-Fortuna, J.-L. Perrossier, M. Mamor, F. Meyer, Christer Fröjdh, Göran Thungström, C. S. Petersson, S. Bodnar, J.L. Regolini	1997	6
19	Schottky Diodes on Si_1-x-yGe_xC_y Alloys. MRS Proceedings ·M. Mamnor, C. Guedj, P. Boucaud, F. Meyer, D. Bouchier, S. Bodnar, J.L. Regolini	1995	5
20	Optical properties of bulk and multi-quantum well SiGe: C heterostructures Journal of Crystal Growth ·P. Boucaud, C. Guedj, D. Bouchier, F. H. Julien, Jean–Michel Lourtioz, S. Bodnar, J.L. Regolini, E. Finkman	1995	5

About S. Bodnar

S. Bodnar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Bioengineering and Mechanics of Materials, having authored 33 papers that have together received 529 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Semiconductor materials and interfaces (14 papers), Silicon and Solar Cell Technologies (10 papers), Chalcogenide Semiconductor Thin Films (8 papers), Silicon Nanostructures and Photoluminescence (8 papers), Quantum Dots Synthesis And Properties (7 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Thin-Film Transistor Technologies (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (498 citations), Atomic and Molecular Physics, and Optics (221 citations), Materials Chemistry (276 citations), Surfaces, Coatings and Films (12 citations) and Biomedical Engineering (50 citations). S. Bodnar has collaborated with scholars based in France, United States and Israel. Frequent co-authors include J.L. Regolini, P. Boucaud, D. Bouchier, F. H. Julien, B. Lambert, Colin G. Francis, C. Broussillou, Jean–Michel Lourtioz, Pierre Bouillon and T. Skotnicki. Their work appears in journals such as Thin Solid Films, Applied Physics Letters, Journal of Crystal Growth, Materials Science in Semiconductor Processing and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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