E. N. Mokhov
About
E. N. Mokhov has authored 209 papers that have received a total of 2.4k indexed citations.
This includes 158 papers in Electrical and Electronic Engineering, 70 papers in Materials Chemistry and 63 papers in Condensed Matter Physics. The topics of these papers are Silicon Carbide Semiconductor Technologies (125 papers), GaN-based semiconductor devices and materials (62 papers) and Semiconductor materials and devices (62 papers). E. N. Mokhov is often cited by papers focused on Silicon Carbide Semiconductor Technologies (125 papers), GaN-based semiconductor devices and materials (62 papers) and Semiconductor materials and devices (62 papers) and collaborates with scholars based in Russia, Germany and South Korea. E. N. Mokhov's co-authors include P. G. Baranov, A. D. Roenkov, Yu.N. Makarov, M.G. Ramm and Yu. A. Vodakov and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.
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