M. Ramón
Impact in
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- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
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- Electronic and Structural Properties of Oxides
Papers in
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- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 7
- Ferroelectric and Negative Capacitance Devices 5
- Integrated Circuits and Semiconductor Failure Analysis 4
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- Electronic and Structural Properties of Oxides 3
- Co-authors
- J. Baker (4 shared papers)D. Roan (4 shared papers)Bruce E. White (4 shared papers)Dina H. Triyoso (3 shared papers)Philip J. Tobin (3 shared papers)Dennis Werho (2 shared papers)L.B. La (2 shared papers)Rich Gregory (2 shared papers)
- Journals
- Journal of The Electrochemical Society (3 papers)Applied Physics Letters (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)Journal of Applied Physics (1 paper)IEEE Electron Device Letters (1 paper)
- Partner nations
- United StatesFranceTaiwan
In The Last Decade
M. Ramón
14 papers receiving 419 citations
Peers
Comparison fields: 5 of 34
- Electrical and Electronic Engineering 415
- Materials Chemistry 198
- Electronic, Optical and Magnetic Materials 37
- Atomic and Molecular Physics, and Optics 50
- Condensed Matter Physics 14
Countries citing papers authored by M. Ramón
This map shows the geographic impact of M. Ramón's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ramón with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ramón more than expected).
Fields of papers citing papers by M. Ramón
This network shows the impact of papers produced by M. Ramón. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ramón. The network helps show where M. Ramón may publish in the future.
Co-authors
The 25 scholars most cited alongside M. Ramón, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2004 | 157 | |
| 2 | 2004 | 61 | |
| 3 | 2003 | 55 | |
| 4 | 2005 | 28 | |
| 5 | 2008 | 27 | |
| 6 | 2005 | 24 | |
| 7 | 2010 | 22 | |
| 8 | 2023 | 17 | |
| 9 | 2005 | 15 | |
| 10 | 2006 | 15 | |
| 11 | 2010 | 14 | |
| 12 | 2011 | 10 | |
| 13 | 2004 | 2 | |
| 14 | 2003 | 2 |
About M. Ramón
M. Ramón is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electrochemistry, Catalysis and Pharmacology, having authored 14 papers that have together received 449 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Electronic and Structural Properties of Oxides (3 papers), Alkaloids: synthesis and pharmacology (1 paper), Magnetic properties of thin films (1 paper) and Ionic liquids properties and applications (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (415 citations), Materials Chemistry (198 citations), Electronic, Optical and Magnetic Materials (37 citations), Atomic and Molecular Physics, and Optics (50 citations) and Condensed Matter Physics (14 citations). M. Ramón has collaborated with scholars based in United States, France and Taiwan. Frequent co-authors include J. Baker, D. Roan, Bruce E. White, Dina H. Triyoso, Philip J. Tobin, Dennis Werho, L.B. La, Rich Gregory, R. I. Hegde and J. Kulik. Their work appears in journals such as Journal of The Electrochemical Society, Applied Physics Letters, IEEE Transactions on Device and Materials Reliability, Journal of Applied Physics and IEEE Electron Device Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.