M. Raine

5.7k citations
71 papers · 1.2k · h-index 22

Impact in

  • Radiation top 5%
    • Radiation Detection and Scintillator Technologies
  • Electrical and Electronic Engineering top 5%
    • Radiation Effects in Electronics
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • CCD and CMOS Imaging Sensors

Papers in

  • Electrical and Electronic Engineering 58
    • Semiconductor materials and devices 32
    • Radiation Effects in Electronics 31
    • Advancements in Semiconductor Devices and Circuit Design 21
    • Integrated Circuits and Semiconductor Failure Analysis 18
    • CCD and CMOS Imaging Sensors 9
  • Radiation 16
    • Radiation Detection and Scintillator Technologies 8
Co-authors
Marc Gaillardin (47 shared papers)Philippe Paillet (50 shared papers)N. Richard (23 shared papers)Olivier Duhamel (33 shared papers)Vincent Goiffon (15 shared papers)Sylvain Girard (21 shared papers)G. Hubert (4 shared papers)A. Valentin (4 shared papers)
Journals
IEEE Transactions on Nuclear Science (42 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (7 papers)Journal of Applied Physics (3 papers)Applied Surface Science (2 papers)Journal of Electron Spectroscopy and Related Phenomena (1 paper)
Partner nations
FranceUnited StatesSlovenia

In The Last Decade

M. Raine

70 papers receiving 1.2k citations

Peers

M. Raine
Comparison fields: 5 of 46
  • Radiation 176
  • Electrical and Electronic Engineering 1.1k
  • Instrumentation 67
  • Surfaces, Coatings and Films 117
  • Hardware and Architecture 108
Replace C.J. Dale with:
C.J. Dale United States
J. Baggio France
F.J. Zutavern United States
J.L. Leray France
Marco Van Uffelen Belgium
D. J. Bartelink United States
Olivier Duhamel France
Zunqi Lin China
G. Pellegrini Spain
Paul Denham United States
M. Raine relative to C.J. Dale United States C.J. Dale's profile →
Citations per field
00.5×5×10×15.7×
C.J. Dale · 1×
Citations per year

Countries citing papers authored by M. Raine

Since Specialization
Citations

This map shows the geographic impact of M. Raine's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Raine with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Raine more than expected).

Fields of papers citing papers by M. Raine

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Raine. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Raine. The network helps show where M. Raine may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Raine, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Raine Line = papers co-authored together M. Raine links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 71 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node
IEEE Transactions on Nuclear Science ·M. Raine, G. Hubert, Marc Gaillardin, L. Artola, Philippe Paillet, S. Girard, Jean-Etienne Sauvestre, Arnaud Bournel
201180
2
Modeling Single Event Transients in Advanced Devices and ICs
IEEE Transactions on Nuclear Science ·L. Artola, Marc Gaillardin, G. Hubert, M. Raine, Philippe Paillet
201570
3
Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node
IEEE Transactions on Nuclear Science ·Marc Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, M. Raine, C. Marcandella, Olivier Duhamel, N. Richard, Olivier Faynot
201366
4
Simulation of Single Particle Displacement Damage in Silicon–Part II: Generation and Long-Time Relaxation of Damage Structure
IEEE Transactions on Nuclear Science ·Antoine Jay, M. Raine, N. Richard, Normand Mousseau, Vincent Goiffon, Anne Hémeryck, Pierre Magnan
201657
5
SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node
IEEE Transactions on Nuclear Science ·L. Artola, G. Hubert, Kevin M. Warren, Marc Gaillardin, Ronald D. Schrimpf, Robert A. Reed, Robert A. Weller, Jonathan R. Ahlbin, Philippe Paillet, M. Raine, Sylvain Girard, S. Duzellier, L. W. Massengill, F. Bezerra
201156
6
Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization
IEEE Transactions on Nuclear Science ·M. Raine, Marc Gaillardin, Jean-Etienne Sauvestre, O. Flament, Arnaud Bournel, V. Aubry-Fortuna
201043
7
Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·A. Valentin, M. Raine, J. E. Sauvestre, Marc Gaillardin, Philippe Paillet
201242
8
Improved Simulation of Ion Track Structures Using New Geant4 Models—Impact on the Modeling of Advanced Technologies Response
IEEE Transactions on Nuclear Science ·M. Raine, A. Valentin, Marc Gaillardin, Philippe Paillet
201237
9
Simulation of Single Particle Displacement Damage in Silicon – Part I: Global Approach and Primary Interaction Simulation
IEEE Transactions on Nuclear Science ·M. Raine, Antoine Jay, N. Richard, Vincent Goiffon, Stéphane Girard, Marc Gaillardin, Philippe Paillet
201637
10
Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies
IEEE Transactions on Nuclear Science ·Marc Gaillardin, M. Martinez, Philippe Paillet, M. Raine, F. Andrieu, O. Faynot, Olivier Thomas
201437
11
Dark Current Random Telegraph Signals in Solid-State Image Sensors
IEEE Transactions on Nuclear Science ·Cédric Virmontois, Vincent Goiffon, Mark S. Robbins, Laurie Tauziede, Hervé Geoffray, M. Raine, Sylvain Girard, O. Gilard, Pierre Magnan, A. Bardoux
201334
12
Transient Radiation Responses of Optical Fibers: Influence of MCVD Process Parameters
IEEE Transactions on Nuclear Science ·Sylvain Girard, C. Marcandella, A. Alessi, A. Boukenter, Y. Ouerdane, N. Richard, Philippe Paillet, Marc Gaillardin, M. Raine
201233
13
Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for protons and heavy ions in silicon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·A. Valentin, M. Raine, Marc Gaillardin, Philippe Paillet
201233
14
Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring
IEEE Transactions on Nuclear Science ·Stéphane Girard, Bruno Capoen, Hicham El Hamzaoui, Mohamed Bouazaoui, Géraud Bouwmans, Adriana Morana, Diego Di Francesca, A. Boukenter, Olivier Duhamel, Philippe Paillet, M. Raine, Marc Gaillardin, M. Trinczek, Cornelia Hoehr, E. W. Blackmore, Y. Ouerdane
201631
15
Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors
IEEE Transactions on Nuclear Science ·Marc Gaillardin, C. Marcandella, M. Martinez, Olivier Duhamel, Thierry Lagutère, P. Paillet, M. Raine, N. Richard, F. Andrieu, Sylvain Barraud, M. Vinet
201728
16
Dark Current Spectroscopy in Neutron, Proton and Ion Irradiated CMOS Image Sensors: From Point Defects to Clusters
IEEE Transactions on Nuclear Science ·Jean-Marc Belloir, Vincent Goiffon, Cédric Virmontois, Philippe Paillet, M. Raine, Romain Molina, Clémentine Durnez, O. Gilard, Pierre Magnan
201626
17
Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Quentin Gibaru, C. Inguimbert, Pablo Caron, M. Raine, Damien Lambert, J. Puech
202025
18
Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. Raine, Marc Gaillardin, Philippe Paillet
201425
19
Electron emission yield for low energy electrons: Monte Carlo simulation and experimental comparison for Al, Ag, and Si
Journal of Applied Physics ·J. Pierron, C. Inguimbert, Mohamed Belhaj, T. Gineste, J. Puech, M. Raine
201724
20
Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors
IEEE Transactions on Nuclear Science ·Jonathan Riffaud, Marc Gaillardin, C. Marcandella, M. Martinez, Philippe Paillet, Olivier Duhamel, Thierry Lagutère, M. Raine, N. Richard, F. Andrieu, Sylvain Barraud, M. Vinet, O. Faynot
201724

About M. Raine

M. Raine is a scholar working on Electrical and Electronic Engineering, Radiation, Surfaces, Coatings and Films, Nuclear and High Energy Physics and Computational Mechanics, having authored 71 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (32 papers), Radiation Effects in Electronics (31 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Electron and X-Ray Spectroscopy Techniques (14 papers), CCD and CMOS Imaging Sensors (9 papers), Radiation Detection and Scintillator Technologies (8 papers) and Ion-surface interactions and analysis (7 papers). The work is most often cited by research in Radiation (176 citations), Electrical and Electronic Engineering (1.1k citations), Instrumentation (67 citations), Surfaces, Coatings and Films (117 citations) and Hardware and Architecture (108 citations). M. Raine has collaborated with scholars based in France, United States and Slovenia. Frequent co-authors include Marc Gaillardin, Philippe Paillet, N. Richard, Olivier Duhamel, Vincent Goiffon, Sylvain Girard, G. Hubert, A. Valentin, M. Martinez and L. Artola. Their work appears in journals such as IEEE Transactions on Nuclear Science, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of Applied Physics, Applied Surface Science and Journal of Electron Spectroscopy and Related Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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