J.-P. Colinge

5.9k citations

144 papers · 4.5k · 1 hit paper · h-index 34

Impact in

Electrical and Electronic Engineering top 0.5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Radio Frequency Integrated Circuit Design
- Ferroelectric and Negative Capacitance Devices
Biomedical Engineering top 5%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 141
- Advancements in Semiconductor Devices and Circuit Design 116
- Semiconductor materials and devices 109
- Silicon Carbide Semiconductor Technologies 43
- Integrated Circuits and Semiconductor Failure Analysis 27
- Thin-Film Transistor Technologies 18
- Radio Frequency Integrated Circuit Design 14
Biomedical Engineering 23
- Nanowire Synthesis and Applications 15

Co-authors: Jong‐Tae Park (2 shared papers)Denis Flandre (30 shared papers)Jean‐Pierre Raskin (17 shared papers)Nima Dehdashti Akhavan (16 shared papers)Ran Yan (17 shared papers)Pedram Razavi (14 shared papers)Isabelle Pauline Ferain (14 shared papers)Christopher William Lee (10 shared papers)
Journals: IEEE Transactions on Electron Devices (18 papers)IEEE Electron Device Letters (17 papers)Electronics Letters (17 papers)Solid-State Electronics (12 papers)IEEE Transactions on Nuclear Science (5 papers)
Partner nations: Belgium United States France

In The Last Decade

J.-P. Colinge

136 papers receiving 4.3k citations

J.-P. Colinge's Hit Papers

align trajectories log scale

Multiple-gate SOI MOSFETs: device design guidelines 2002 · 389 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2002 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by J.-P. Colinge

Since Specialization

Citations

This map shows the geographic impact of J.-P. Colinge's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.-P. Colinge with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.-P. Colinge more than expected).

Fields of papers citing papers by J.-P. Colinge

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.-P. Colinge. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.-P. Colinge. The network helps show where J.-P. Colinge may publish in the future.

Co-authors

The 25 scholars most cited alongside J.-P. Colinge, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.-P. Colinge Line = papers co-authored together J.-P. Colinge links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 144 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Multiple-gate SOI MOSFETs: device design guidelines IEEE Transactions on Electron Devices ·Jong‐Tae Park, J.-P. Colinge Hit paper breakdown →	2002	389
2	Junctionless Nanowire Transistor (JNT): Properties and design guidelines Solid-State Electronics ·J.-P. Colinge, Abhinav Kranti, Ran Yan, Christopher William Lee, Isabelle Pauline Ferain, R. Yu, Nima Dehdashti Akhavan, Pedram Razavi	2011	366
3	Substrate crosstalk reduction using SOI technology IEEE Transactions on Electron Devices ·Jean‐Pierre Raskin, A. Viviani, Denis Flandre, J.-P. Colinge	1997	232
4	Silicon-on-insulator 'gate-all-around device' J.-P. Colinge, M.-H. Gao, Albert Romano-Rodriguez, H.E. Maes, Cor L. Claeys	2002	223
5	Multi-gate SOI MOSFETs Microelectronic Engineering ·J.-P. Colinge	2007	205
6	Reduction of kink effect in thin-film SOI MOSFETs IEEE Electron Device Letters ·J.-P. Colinge	1988	168
7	Junctionless Transistors: Physics and Properties Engineering materials ·J.-P. Colinge, Christopher William Lee, Nima Dehdashti Akhavan, Ran Yan, Isabelle Pauline Ferain, Pedram Razavi, Abhinav Kranti, R. Yu	2011	135
8	SOI gated resistor: CMOS without junctions UWA Profiles and Research Repository (University of Western Australia) ·J.-P. Colinge, Christopher William Lee, Aryan Afzalian, Nima Dehdashti Akhavan, Ran Yan, Isabelle Pauline Ferain, Pedram Razavi, B. O'Neill	2009	120
9	Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling IEEE Transactions on Electron Devices ·Jean‐Pierre Raskin, Renaud Gillon, Jian Chen, Danielle Vanhoenacker‐Janvier, J.-P. Colinge	1998	118
10	Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs IEEE Transactions on Electron Devices ·J.-P. Colinge	1990	114
11	Quantum-mechanical effects in trigate SOI MOSFETs IEEE Transactions on Electron Devices ·J.-P. Colinge, J. Alderman, Weize Xiong, C. Rinn Cleavelin	2006	112
12	An SOI voltage-controlled bipolar-MOS device IEEE Transactions on Electron Devices ·J.-P. Colinge	1987	103
13	Fully-depleted SOI CMOS for analog applications IEEE Transactions on Electron Devices ·J.-P. Colinge	1998	102
14	Design of SOI CMOS operational amplifiers for applications up to 300°C IEEE Journal of Solid-State Circuits ·J.-P. Eggermont, D. De Ceuster, Denis Flandre, B. Gentinne, Paul G. A. Jespers, J.-P. Colinge	1996	89
15	Hot-electron effects in Silicon-on-insulator n-channel MOSFET's IEEE Transactions on Electron Devices ·J.-P. Colinge	1987	85
16	Use of selective annealing for growing very large grain silicon on insulator films Applied Physics Letters ·J.-P. Colinge, E. Demoulin, D. Bensahel, G. Auvert	1982	78
17	Reduction of floating substrate effect in thin-film SOI MOSFETs Electronics Letters ·J.-P. Colinge	1986	69
18	Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors IEEE Electron Device Letters ·James C. Sturm, K. Tokunaga, J.-P. Colinge	1988	69
19	Low-temperature electron mobility in Trigate SOI MOSFETs IEEE Electron Device Letters ·J.-P. Colinge, Aidan J. Quinn, Liam Floyd, Gareth Redmond, J. Alderman, Weize Xiong, C. Rinn Cleavelin, T. Schulz	2006	65
20	Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature IEEE Transactions on Electron Devices ·Tarek Elewa, Francis Balestra, Sorin Cristoloveanu, Ismail Mohammed Hafez, J.-P. Colinge, A.J. Auberton‐Hervé, J. Davis	1990	64

About J.-P. Colinge

J.-P. Colinge is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Computational Mechanics, having authored 144 papers that have together received 4.5k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (116 papers), Semiconductor materials and devices (109 papers), Silicon Carbide Semiconductor Technologies (43 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers), Thin-Film Transistor Technologies (18 papers), Nanowire Synthesis and Applications (15 papers), Radio Frequency Integrated Circuit Design (14 papers) and Silicon Nanostructures and Photoluminescence (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.4k citations), Biomedical Engineering (967 citations), Atomic and Molecular Physics, and Optics (341 citations), Materials Chemistry (313 citations) and Hardware and Architecture (31 citations). J.-P. Colinge has collaborated with scholars based in Belgium, United States and France. Frequent co-authors include Jong‐Tae Park, Denis Flandre, Jean‐Pierre Raskin, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Isabelle Pauline Ferain, Christopher William Lee, Abhinav Kranti and R. Yu. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Electronics Letters, Solid-State Electronics and IEEE Transactions on Nuclear Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

J.-P. Colinge

Impact in

Papers in i

In The Last Decade

J.-P. Colinge

J.-P. Colinge's Hit Papers

Peers

Countries citing papers authored by J.-P. Colinge

Fields of papers citing papers by J.-P. Colinge

All Works

About J.-P. Colinge

Explore authors with similar magnitude of impact

Papers in