L. Nesbit

16 papers receiving 454 citations

Peers

L. Nesbit
Comparison fields: 5 of 41
  • General Materials Science 20
  • Materials Chemistry 274
  • Electrical and Electronic Engineering 337
  • Computational Mechanics 66
  • Ceramics and Composites 17
Replace T.F. Retajczyk with:
T.F. Retajczyk United States
M. Bartur United States
C. Hayzelden United States
Takako Yamashita Japan
D. J. Godfrey United Kingdom
J.P. Krog Denmark
H. K. Liou United States
D. Mangelinck France
S.-M. Kuo United States
Jaakko Lenkkeri Finland
L. Nesbit relative to T.F. Retajczyk United States T.F. Retajczyk's profile →
Citations per field
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T.F. Retajczyk · 1×
Citations per year

Countries citing papers authored by L. Nesbit

Since Specialization
Citations

This map shows the geographic impact of L. Nesbit's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Nesbit with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Nesbit more than expected).

Fields of papers citing papers by L. Nesbit

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Nesbit. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Nesbit. The network helps show where L. Nesbit may publish in the future.

Co-authors

The 22 scholars most cited alongside L. Nesbit, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Nesbit Line = papers co-authored together L. Nesbit links everyone, so they are left out of the graph.

All Works

16 of 16 papers shown
#Work
1 1985185
2 198649
3 197839
4 198535
5 198535
6 198626
7 198023
8 198422
9 198620
10 198117
11 200210
12 19847
13 19846
14 20026
15 19851
16 19861

About L. Nesbit

L. Nesbit is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 16 papers that have together received 482 indexed citations. Recurring topics across this work include Semiconductor materials and devices (10 papers), Silicon and Solar Cell Technologies (3 papers), Semiconductor materials and interfaces (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), High Temperature Alloys and Creep (3 papers), Copper Interconnects and Reliability (3 papers), Silicon Nanostructures and Photoluminescence (3 papers) and Advanced Materials Characterization Techniques (3 papers). The work is most often cited by research in General Materials Science (20 citations), Materials Chemistry (274 citations), Electrical and Electronic Engineering (337 citations), Computational Mechanics (66 citations) and Ceramics and Composites (17 citations). L. Nesbit has collaborated with scholars based in United States. Frequent co-authors include David E. Laughlin, James G. Ryan, S. R. Stiffler, Paihung Pan, Jun H. Souk, K. Y. Ahn, L. Krusin‐Elbaum, Charles W. Koburger, B. Davari and Ashok K Ray. Their work appears in journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices, Journal of Crystal Growth, IEEE Electron Device Letters and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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