Jack Y.-C. Sun

3.0k citations
106 papers · 2.2k · 1 hit paper · h-index 25

Impact in

  • Electrical and Electronic Engineering top 2%
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Radio Frequency Integrated Circuit Design
    • Silicon Carbide Semiconductor Technologies
    • Silicon and Solar Cell Technologies
    • Thin-Film Transistor Technologies
  • Atomic and Molecular Physics, and Optics top 5%
    • Semiconductor materials and interfaces

Papers in

  • Electrical and Electronic Engineering 102
    • Semiconductor materials and devices 91
    • Advancements in Semiconductor Devices and Circuit Design 76
    • Integrated Circuits and Semiconductor Failure Analysis 23
    • Radio Frequency Integrated Circuit Design 16
    • Silicon Carbide Semiconductor Technologies 14
    • Thin-Film Transistor Technologies 12
    • Photonic and Optical Devices 8
  • Atomic and Molecular Physics, and Optics 23
    • Semiconductor materials and interfaces 14
Co-authors
James H. Comfort (25 shared papers)Johannes M. C. Stork (21 shared papers)Emmanuel F. Crabbé (17 shared papers)B.S. Meyerson (14 shared papers)Keith A. Jenkins (23 shared papers)Gary L. Patton (10 shared papers)Yuan Taur (7 shared papers)John Cressler (22 shared papers)
Journals
IEEE Electron Device Letters (23 papers)IEEE Transactions on Electron Devices (16 papers)Microelectronic Engineering (2 papers)IBM Journal of Research and Development (2 papers)IEEE Transactions on Microwave Theory and Techniques (1 paper)
Partner nations
United StatesTaiwanItaly

In The Last Decade

Jack Y.-C. Sun

95 papers receiving 2.1k citations

Jack Y.-C. Sun's Hit Papers

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors 1990 · 394 citations
3940+12+24Years since publication100200300
What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

  1. 1990 IEEE Electron Device Letters

Peers

Jack Y.-C. Sun
Comparison fields: 5 of 42
  • Electrical and Electronic Engineering 2.1k
  • Atomic and Molecular Physics, and Optics 520
  • Materials Chemistry 229
  • Hardware and Architecture 31
  • Biomedical Engineering 185
Replace J.C.S. Woo with:
J.C.S. Woo United States
James H. Comfort United States
G. Glass United States
Henk C. de Graaff Netherlands
Gilbert J. Declerck Belgium
Johannes M. C. Stork United States
Gerard Sarrabayrouse France
Srikanth B. Samavedam United States
N. Garry Tarr Canada
J. Widiez France
Jack Y.-C. Sun relative to J.C.S. Woo United States J.C.S. Woo's profile →
Citations per field
00.5×1.5×1.8×
J.C.S. Woo · 1×
Citations per year

Countries citing papers authored by Jack Y.-C. Sun

Since Specialization
Citations

This map shows the geographic impact of Jack Y.-C. Sun's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jack Y.-C. Sun with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jack Y.-C. Sun more than expected).

Fields of papers citing papers by Jack Y.-C. Sun

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jack Y.-C. Sun. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jack Y.-C. Sun. The network helps show where Jack Y.-C. Sun may publish in the future.

Co-authors

The 25 scholars most cited alongside Jack Y.-C. Sun, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jack Y.-C. Sun Line = papers co-authored together Jack Y.-C. Sun links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 106 papers — load more, or switch the sort, to bring in the rest.

#Work
1
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
IEEE Electron Device Letters ·Gary L. Patton, James H. Comfort, B.S. Meyerson, Emmanuel F. Crabbé, Gerald J. Scilla, Edouard de Frésart, Johannes M. C. Stork, Jack Y.-C. Sun
Hit paper breakdown →		1990394
2
Submicrometer-channel CMOS for low-temperature operation
IEEE Transactions on Electron Devices ·Jack Y.-C. Sun, Yuan Taur, Robert H. Dennard, S. P. Klepner
1987107
3
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations
IEEE Transactions on Electron Devices ·John Cressler, James H. Comfort, Emmanuel F. Crabbé, Gary L. Patton, Johannes M. C. Stork, Jack Y.-C. Sun, B.S. Meyerson
199388
4
A high-performance 0.25- mu m CMOS technology. II. Technology
IEEE Transactions on Electron Devices ·Bijan Davari, Wei‐Hsu Chang, Karen E. Petrillo, Catherine Y. Wong, Dan Moy, Matthew R. Wordeman, Jack Y.-C. Sun, Ching-Fang Hsu
199287
5
Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
IEEE Transactions on Electron Devices ·Qian Xie, Chia-Jung Lee, Jun Xu, Clement H. Wann, Jack Y.-C. Sun, Yuan Taur
201387
6
Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependences
Journal of Applied Physics ·Chih‐Tang Sah, Jack Y.-C. Sun, J.J. Tzou
198381
7
Characteristics of SOI FET's under pulsed conditions
IEEE Transactions on Electron Devices ·Keith A. Jenkins, Jack Y.-C. Sun, J. Gautier
199766
8
On the accuracy of channel length characterization of LDD MOSFET's
IEEE Transactions on Electron Devices ·Jack Y.-C. Sun, Matthew R. Wordeman, S.E. Laux
198656
9
Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating
IEEE Electron Device Letters ·Keith A. Jenkins, Jack Y.-C. Sun
199556
10
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
IEEE Electron Device Letters ·Emmanuel F. Crabbé, James H. Comfort, W. Lee, John Cressler, B.S. Meyerson, A.C. Megdanis, Jack Y.-C. Sun, Johannes M. C. Stork
199253
11
Source—Drain contact resistance in CMOS with self-aligned TiSi2
IEEE Transactions on Electron Devices ·Yuan Taur, Jack Y.-C. Sun, Dan Moy, L.K. Wang, Bijan Davari, S. P. Klepner, C. Y. Ting
198748
12
Doping of n+ and p+ polysilicon in a dual-gate CMOS process
Catherine Y. Wong, Jack Y.-C. Sun, Yuan Taur, C. S. Oh, Renato Angelucci, Bijan Davari
198846
13
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues
IEEE Transactions on Electron Devices ·John Cressler, Emmanuel F. Crabbé, James H. Comfort, Johannes M. C. Stork, Jack Y.-C. Sun
199346
14
A 0.13 μm CMOS technology with 193 nm lithography and Cu/low-k for high performance applications
Konrad K.-L. Young, Shuxian Wu, Chung-Cheng Wu, C.H. Wang, Chenfang Lin, J.Y. Cheng, Meng‐Hsueh Chiang, Siyue Chen
200242
15
Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors
IEEE Transactions on Electron Devices ·Joachim N. Burghartz, Jack Y.-C. Sun, Carol L. Stanis, Sebastian Mäder, J.D. Warnock
199235
16
CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications
IBM Journal of Research and Development ·GHAVAM G. SHAHIDI, J.D. Warnock, James H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, Terry I. Chappell, B.A. Chappell
199534
17
A 0.18 /spl mu/m CMOS logic technology with dual gate oxide and low-k interconnect for high-performance and low-power applications
Carlos H. Diaz, K.L. Young, Johnny Hsu, J.-C. Lin, Chuanchuan Hou, C.T. Lin, J.J. Liaw, Chung-Cheng Wu
199933
18
50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles
IEEE Electron Device Letters ·James N. Warnock, John Cressler, Keith A. Jenkins, T.-C. Chen, Jack Y.-C. Sun, D.D. Tang
199032
19
Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors
IEEE Electron Device Letters ·John Cressler, James H. Comfort, Emmanuel F. Crabbé, Gary L. Patton, W. Lee, Jack Y.-C. Sun, Johannes M. C. Stork, B.S. Meyerson
199131
20
Geometry effects in MOSFET channel length extraction algorithms
IEEE Electron Device Letters ·Matthew R. Wordeman, Jack Y.-C. Sun, S.E. Laux
198529

About Jack Y.-C. Sun

Jack Y.-C. Sun is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics, having authored 106 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (91 papers), Advancements in Semiconductor Devices and Circuit Design (76 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers), Radio Frequency Integrated Circuit Design (16 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor materials and interfaces (14 papers), Thin-Film Transistor Technologies (12 papers) and Photonic and Optical Devices (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (520 citations), Materials Chemistry (229 citations), Hardware and Architecture (31 citations) and Biomedical Engineering (185 citations). Jack Y.-C. Sun has collaborated with scholars based in United States, Taiwan and Italy. Frequent co-authors include James H. Comfort, Johannes M. C. Stork, Emmanuel F. Crabbé, B.S. Meyerson, Keith A. Jenkins, Gary L. Patton, Yuan Taur, John Cressler, Joachim N. Burghartz and Matthew R. Wordeman. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, IBM Journal of Research and Development and IEEE Transactions on Microwave Theory and Techniques.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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