J. Das

1.7k citations

89 papers · 1.4k · h-index 20

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 61
- Silicon Carbide Semiconductor Technologies 14
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 8
- Radio Frequency Integrated Circuit Design 6
- Silicon and Solar Cell Technologies 6
Condensed Matter Physics 32
- GaN-based semiconductor devices and materials 30

Co-authors: Marianne Germain (21 shared papers)Kai Cheng (17 shared papers)Gustaaf Borghs (14 shared papers)Denis Marcon (17 shared papers)Puneet Srivastava (10 shared papers)Maarten Leys (14 shared papers)M. Van Hove (14 shared papers)R. Mertens (15 shared papers)
Journals: IEEE Transactions on Industry Applications (8 papers)IEEE Electron Device Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)International Journal of Remote Sensing (3 papers)Signal Processing (3 papers)
Partner nations: Belgium United States India

In The Last Decade

J. Das

86 papers receiving 1.3k citations

Peers

Countries citing papers authored by J. Das

Since Specialization

Citations

This map shows the geographic impact of J. Das's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Das with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Das more than expected).

Fields of papers citing papers by J. Das

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Das. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Das. The network helps show where J. Das may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Das, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Das Line = papers co-authored together J. Das links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 89 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Power System Analysis: Short-Circuit Load Flow and Harmonics CERN Document Server (European Organization for Nuclear Research) ·J. Das	2002	158
2	Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal IEEE Electron Device Letters ·Puneet Srivastava, J. Das, Domenica Visalli, M. Van Hove, Paweł E. Malinowski, Denis Marcon, Silvia Lenci, Karen Geens, Kai Cheng, Maarten Leys, Stefaan Decoutere, R. Mertens, Gustaaf Borghs	2010	101
3	A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs Padua Research Archive (University of Padova) ·Denis Marcon, T. Kauerauf, Farid Medjdoub, J. Das, M. Van Hove, Puneet Srivastava, Kai Cheng, Maarten Leys, R. Mertens, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, G. Borghs	2010	76
4	Effects of momentary voltage dips on the operation of induction and synchronous motors IEEE Transactions on Industry Applications ·J. Das	1990	67
5	Power System Harmonics and Passive Filter Designs CERN Document Server (European Organization for Nuclear Research) ·J. Das	2015	65
6	Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design IEEE Transactions on Electron Devices ·J. Das, Herman Oprins, Hangfeng Ji, Andrei Sarua, Wouter Ruythooren, Joff Derluyn, Martin Kuball, Marianne Germain, G. Borghs	2006	64
7	Control of friction driven oscillation by time-delayed state feedback Journal of Sound and Vibration ·J. Das, A.K. Mallik	2006	54
8	A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si IEEE Electron Device Letters ·J. Das, Jordi Everts, Jeroen Van den Keybus, M. Van Hove, Domenica Visalli, Puneet Srivastava, Denis Marcon, Kai Cheng, Maarten Leys, Stefaan Decoutere, Johan Driesen, Gustaaf Borghs	2011	54
9	Effects of momentary voltage dips on the operation of induction and synchronous motors J. Das	2003	48
10	Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage IEEE Electron Device Letters ·Puneet Srivastava, J. Das, Domenica Visalli, Joff Derluyn, M. Van Hove, Paweł E. Malinowski, Denis Marcon, Karen Geens, Kai Cheng, Stefan Degroote, Maarten Leys, Marianne Germain, Stefaan Decoutere, R. Mertens, Gustaaf Borghs	2010	44
11	Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode Japanese Journal of Applied Physics ·Pol Van Dorpe, Vasyl Motsnyi, M. S. Nijboer, E. Goovaerts, Viacheslav I. Safarov, J. Das, (unknown), Gustaaf Borghs, Jo De Boeck	2003	37
12	Urethral Instability: Related to Stress and/or Urge Incontinence? The Journal of Urology ·R.L. Vereecken, J. Das	1985	35
13	Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Anne Lorenz, Joff Derluyn, J. Das, Kai Cheng, Stefan Degroote, Farid Medjdoub, Marianne Germain, Gustaaf Borghs	2009	31
14	Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf> Joff Derluyn, M. Van Hove, Domenica Visalli, Anne Lorenz, Denis Marcon, Puneet Srivastava, Karen Geens, B. Sijmus, J. Viaene, Xuanwu Kang, J. Das, Farid Medjdoub, Kai Cheng, Stefan Degroote, Maarten Leys, G. Borghs, Marianne Germain	2009	29
15	A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon TU/e Research Portal (Eindhoven University of Technology) ·Jordi Everts, J. Das, Jeroen Van den Keybus, Jan Genoe, Marianne Germain, Johan Driesen	2010	29
16	Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy IEEE Transactions on Electron Devices ·Hangfeng Ji, Martin Kuball, Andrei Sarua, J. Das, Wouter Ruythooren, Marianne Germain, G. Borghs	2006	23
17	Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection IEEE Electron Device Letters ·Paweł E. Malinowski, J. John, J.-Y. Duboz, Geert Hellings, Anne Lorenz, J. Madrid, Charles Sturdevant, Kai Cheng, Maarten Leys, Joff Derluyn, J. Das, M. Germain, K. Minoglou, Piet De Moor, Éric Frayssinet, F. Sèmond, J.‐F. Hochedez, B. Giordanengo, R. Mertens	2009	22
18	Silicon Substrate Engineered High-Voltage High-Temperature GaN-DHFETs IEEE Transactions on Electron Devices ·Puneet Srivastava, J. Das, R. Mertens, Gustaaf Borghs	2013	22
19	Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs IEEE Transactions on Electron Devices ·Domenica Visalli, M. Van Hove, Joff Derluyn, Puneet Srivastava, Denis Marcon, J. Das, M. Leys, Stefan Degroote, Kai Cheng, Erwin Vandenplas, Marianne Germain, Gustaaf Borghs	2010	21
20	Limitations of fault-current limiters for expansion of electrical distribution systems IEEE Transactions on Industry Applications ·J. Das	1997	20

About J. Das

J. Das is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 89 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Silicon Carbide Semiconductor Technologies (14 papers), Semiconductor materials and devices (14 papers), Ga2O3 and related materials (11 papers), Semiconductor Quantum Structures and Devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Radio Frequency Integrated Circuit Design (6 papers) and Silicon and Solar Cell Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (595 citations), Electronic, Optical and Magnetic Materials (338 citations), Electrical and Electronic Engineering (1.0k citations), Control and Systems Engineering (220 citations) and Urology (34 citations). J. Das has collaborated with scholars based in Belgium, United States and India. Frequent co-authors include Marianne Germain, Kai Cheng, Gustaaf Borghs, Denis Marcon, Puneet Srivastava, Maarten Leys, M. Van Hove, R. Mertens, G. Borghs and A.K. Mallik. Their work appears in journals such as IEEE Transactions on Industry Applications, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, International Journal of Remote Sensing and Signal Processing.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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