J. C. Lee

756 citations

22 papers · 687 · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials

Papers in

Electrical and Electronic Engineering 20
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 11
- Ferroelectric and Negative Capacitance Devices 6
- Advanced Memory and Neural Computing 6
- Silicon Carbide Semiconductor Technologies 3
Materials Chemistry 7
- Electronic and Structural Properties of Oxides 6

Co-authors: P. D. Kirsch (6 shared papers)John Gilbert Ekerdt (1 shared paper)Juan G. Lozano (1 shared paper)Chang Seok Kang (1 shared paper)Kang Min Ok (1 shared paper)S. Koveshnikov (1 shared paper)Wilman Tsai (1 shared paper)S. Oktyabrsky (2 shared papers)
Journals: Applied Physics Letters (7 papers)Journal of Applied Physics (2 papers)Journal of Electronic Materials (1 paper)ECS Solid State Letters (1 paper)Rare & Special e-Zone (The Hong Kong University of Science and Technology) (1 paper)
Partner nations: United States South Korea Taiwan

In The Last Decade

J. C. Lee

21 papers receiving 673 citations

Peers

Countries citing papers authored by J. C. Lee

Since Specialization

Citations

This map shows the geographic impact of J. C. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Lee more than expected).

Fields of papers citing papers by J. C. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Lee. The network helps show where J. C. Lee may publish in the future.

Co-authors

The 25 scholars most cited alongside J. C. Lee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. C. Lee Line = papers co-authored together J. C. Lee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100) Journal of Applied Physics ·P. D. Kirsch, Chang Seok Kang, Juan G. Lozano, J. C. Lee, John Gilbert Ekerdt	2002	241
2	Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer Applied Physics Letters ·S. Koveshnikov, Wilman Tsai, Kang Min Ok, J. C. Lee, V. Torkanov, Michail M. Yakimov, S. Oktyabrsky	2006	169
3	Electrical properties of ZrO2 gate dielectric on SiGe Applied Physics Letters ·Tat Ngai, Wenqiang Qi, Rajni Sharma, J. Fretwell, Xiaofeng Chen, J. C. Lee, Sanjay Kumar Banerjee	2000	99
4	Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices Journal of Applied Physics ·J. Yum, Tarik Akyol, Ming Lei, Todd W. Hudnall, Gennadi I. Bersuker, Michael Downer, Christopher W. Bielawski, J. C. Lee	2011	43
5	Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides Applied Physics Letters ·Mingang Hao, W.-M. Chen, Kah-Keen Lai, J. C. Lee, Mark Gardner, Jim Fulford	1995	30
6	Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors MRS Proceedings ·Chandra Sudhama, John C. Carrano, Logan B. Parker, Vinay Chikarmane, J. C. Lee, A.F. Tasch, Warner A. Miller, Norman Abt	1990	16
7	Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric Applied Physics Letters ·Tat Ngai, Wenqiang Qi, Rajni Sharma, J. Fretwell, Xiaofeng Chen, J. C. Lee, Sudipta Banerjee	2001	15
8	Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric Applied Physics Letters ·J. Yum, Tarik Akyol, Ming Lei, Domingo A. Ferrer, Todd W. Hudnall, Michael Downer, Christopher W. Bielawski, Gennadi I. Bersuker	2011	13
9	Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors Applied Physics Letters ·Hyo-Seob Shin, J. Yum, Derek W. Johnson, Harlan Rusty Harris, Todd W. Hudnall, Jungwoo Oh, P. D. Kirsch, W.-E. Wang	2013	11
10	Transient bicarrier response in high-k dielectrics and its impact on transient charge effects in high-k complementary metal oxide semiconductor devices Applied Physics Letters ·Chang Yong Kang, J. C. Lee, Rino Choi, Sook‐Keun Song, Chadwin D. Young, Gennadi I. Bersuker, B. H. Lee	2006	8
11	Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films ECS Solid State Letters ·Yen‐Ting Chen, Burt W. Fowler, Yao‐Feng Chang, Yiwen Wang, Fei Xue, Fei Zhou, J. C. Lee	2013	7
12	Thickness-scaling of sputtered PZT films in the 200 nm range for memory applications Journal of Electronic Materials ·Chandra Sudhama, Juri Kim, R. Khamankar, Vinay Chikarmane, J. C. Lee	1994	6
13	Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation Chang-Woo Sohn, Chang Yong Kang, Rock‐Hyun Baek, Do-Young Choi, Hyun Chul Sagong, Eui-Young Jeong, Jeong‐Soo Lee, P. D. Kirsch	2012	5
14	Effect of fin height of tapered FinFETs on the sub-22-nm System on Chip (SoC) application using TCAD simulation Chang-Woo Sohn, Chang Yong Kang, Myung-Dong Ko, Rock‐Hyun Baek, Chan-Hoon Park, Sung-Ho Kim, Eui-Young Jeong, Jeong‐Soo Lee	2013	5
15	Study of ambient effect in active SiOx-based resistive switching memory Yao‐Feng Chang, P. Y. Chen, Burt W. Fowler, Y. T. Chen, Fei Xue, Yiwen Wang, Fei Zhou, J. C. Lee	2013	4
16	Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure Yao‐Feng Chang, Burt W. Fowler, Fei Zhou, Kyung Seok Byun, J. C. Lee	2015	3
17	ALD beryllium oxide: Novel barrier layer for high performance gate stacks on Si and high mobility substrates J. Yum, Gennadi I. Bersuker, Domingo A. Ferrer, Tarik Akyol, Ming Lei, K.W. Park, Todd W. Hudnall, Michael Downer	2011	3
18	Challenges of III–V materials in advanced CMOS logic Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·P. D. Kirsch, Richard J. W. Hill, Jiayi Huang, W. Y. Loh, T.-W. Kim, Man Hoi Wong, Byung-Jun Min, C. Huffman	2012	3
19	High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture Yao‐Feng Chang, Ji Li, Y. C. Chen, Fei Zhou, Tsung‐Ming Tsai, Kuan-chang Chang, M. C. Chen, Tien‐Chun Chang	2014	2
20	Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge∕Si1−xGex∕Si substrates with Al2O3 gate dielectric Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Davood Shahrjerdi, Noppadon Nuntawong, Ganesh Balakrishnan, Domingo Ixcoatl Garcia-Gutierrez, Arezou Khoshakhlagh, Emanuel Tutuc, DL Huffaker, J. C. Lee	2008	2

About J. C. Lee

J. C. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Biomedical Engineering, having authored 22 papers that have together received 687 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Electronic and Structural Properties of Oxides (6 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Advanced Memory and Neural Computing (6 papers), Semiconductor materials and interfaces (4 papers), Silicon Carbide Semiconductor Technologies (3 papers) and Transition Metal Oxide Nanomaterials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (651 citations), Materials Chemistry (280 citations), Atomic and Molecular Physics, and Optics (156 citations), Electronic, Optical and Magnetic Materials (66 citations) and Bioengineering (14 citations). J. C. Lee has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include P. D. Kirsch, John Gilbert Ekerdt, Juan G. Lozano, Chang Seok Kang, Kang Min Ok, S. Koveshnikov, Wilman Tsai, S. Oktyabrsky, Michail M. Yakimov and Rajni Sharma. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, ECS Solid State Letters and Rare & Special e-Zone (The Hong Kong University of Science and Technology).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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