J. A. Hallmark

833 citations
22 papers · 684 · h-index 11

Impact in

    • Electronic and Structural Properties of Oxides
    • Ferroelectric and Piezoelectric Materials
    • Semiconductor materials and devices
    • Ferroelectric and Negative Capacitance Devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis

Papers in

J. A. Hallmark

21 papers receiving 652 citations

Peers

J. A. Hallmark
Comparison fields: 5 of 26
  • Materials Chemistry 472
  • Electrical and Electronic Engineering 576
  • Atomic and Molecular Physics, and Optics 167
  • Surfaces, Coatings and Films 35
  • Electronic, Optical and Magnetic Materials 76
Replace Mau-Phon Houng with:
Mau-Phon Houng Taiwan
Jaehoo Park South Korea
C. Hobbs United States
Antonio Rotondaro United States
W. Kissinger Germany
P. Y. Hung United States
M. Badylevich Belgium
D. Roan United States
Sergio A. Ajuria United States
C. Overgaard United States
J. A. Hallmark relative to Mau-Phon Houng Taiwan Mau-Phon Houng's profile →
Citations per field
00.5×1.7×
Mau-Phon Houng · 1×
Citations per year

Countries citing papers authored by J. A. Hallmark

Since Specialization
Citations

This map shows the geographic impact of J. A. Hallmark's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. A. Hallmark with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. A. Hallmark more than expected).

Fields of papers citing papers by J. A. Hallmark

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. A. Hallmark. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. A. Hallmark. The network helps show where J. A. Hallmark may publish in the future.

Co-authors

The 25 scholars most cited alongside J. A. Hallmark, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. A. Hallmark Line = papers co-authored together J. A. Hallmark links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 22 papers — load more, or switch the sort, to bring in the rest.

#Work
1 2000261
2 2000103
3 200066
4 200034
5 199934
6 200032
7 199926
8 199925
9 199922
10 200516
11 200014
12 200210
13 19939
14 19978
15 20026
16 19975
17 20163
18 19973
19 19953
20 19942

About J. A. Hallmark

J. A. Hallmark is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Surfaces, Coatings and Films, having authored 22 papers that have together received 684 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Electronic and Structural Properties of Oxides (5 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Surface and Thin Film Phenomena (5 papers), Ferroelectric and Piezoelectric Materials (3 papers), Semiconductor materials and interfaces (3 papers), Electron and X-Ray Spectroscopy Techniques (3 papers) and Low-power high-performance VLSI design (3 papers). The work is most often cited by research in Materials Chemistry (472 citations), Electrical and Electronic Engineering (576 citations), Atomic and Molecular Physics, and Optics (167 citations), Surfaces, Coatings and Films (35 citations) and Electronic, Optical and Magnetic Materials (76 citations). J. A. Hallmark has collaborated with scholars based in United States, Spain and Sweden. Frequent co-authors include W. J. Ooms, J. Curless, J. Ramdani, K. Eisenbeiser, C. Overgaard, J. Finder, R. Droopad, Zhiyi Yu, Zhiping Yu and Loai G. Salem. Their work appears in journals such as Surface Science, Physical review. B, Condensed matter, IEEE Transactions on Electron Devices, Batteries and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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