J. Bläsing

7.6k citations

192 papers · 6.6k · 2 hit papers · h-index 40

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 128
- GaN-based semiconductor devices and materials 126
Electronic, Optical and Magnetic Materials 75
- Ga2O3 and related materials 67

Co-authors: A. Krost (121 shared papers)Armin Dadgar (104 shared papers)A. Diez (32 shared papers)Margit Zacharias (17 shared papers)Michael H. Schmidt (2 shared papers)R. Scholz (1 shared paper)U. Kahler (1 shared paper)Jacqueline Heitmann (1 shared paper)
Journals: Applied Physics Letters (40 papers)Journal of Crystal Growth (24 papers)physica status solidi (b) (16 papers)Journal of Applied Physics (12 papers)Japanese Journal of Applied Physics (11 papers)
Partner nations: Germany United States Japan

In The Last Decade

J. Bläsing

187 papers receiving 6.5k citations

J. Bläsing's Hit Papers

align trajectories log scale

Binary copper oxide semiconductors: From materials towards devices 2012 · 639 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2012 physica status solidi (b)
2002 Applied Physics Letters

Peers

Countries citing papers authored by J. Bläsing

Since Specialization

Citations

This map shows the geographic impact of J. Bläsing's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Bläsing with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Bläsing more than expected).

Fields of papers citing papers by J. Bläsing

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Bläsing. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Bläsing. The network helps show where J. Bläsing may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Bläsing, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Bläsing Line = papers co-authored together J. Bläsing links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 192 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach Applied Physics Letters ·Margit Zacharias, Jacqueline Heitmann, R. Scholz, U. Kahler, Michael H. Schmidt, J. Bläsing Hit paper breakdown →	2002	670
2	Binary copper oxide semiconductors: From materials towards devices physica status solidi (b) ·Bertrand Meyer, A. Polity, Daniel Reppin, Martin Becker, Philipp Hering, Peter Jens Klar, Th. Sander, Christian T. Reindl Hit paper breakdown →	2012	639
3	Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness Japanese Journal of Applied Physics ·Armin Dadgar, J. Bläsing, Annette Diez, Assadullah Alam, Michael Heuken, A. Krost	2000	294
4	Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking Applied Physics Letters ·Armin Dadgar, M. Poschenrieder, J. Bläsing, Karsten Fehse, A. Diez, A. Krost	2002	166
5	High Si and Ge n-type doping of GaN doping - Limits and impact on stress Applied Physics Letters ·Stephanie Fritze, Armin Dadgar, Hartmut Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost	2012	164
6	Thermal crystallization of amorphous Si/SiO2 superlattices Applied Physics Letters ·Margit Zacharias, J. Bläsing, Peter Veit, L. Tsybeskov, Karl D. Hirschman, Philippe M. Fauchet	1999	163
7	Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm−3 Physical Review B ·Martin Feneberg, Sarah Osterburg, Karsten Lange, Christian Lidig, Bernd Garke, Rüdiger Goldhahn, Eberhard Richter, Carsten Netzel	2014	156
8	High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) Applied Physics Letters ·Armin Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, Martin Neuburger, E. Kohn, Ingo Daumiller	2004	128
9	MOVPE growth of GaN on Si(111) substrates Journal of Crystal Growth ·Armin Dadgar, M. Poschenrieder, J. Bläsing, Oscar Edel Contreras, Frank Bertram, Till Riemann, A. Reiher, M. Kunze	2002	124
10	Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction New Journal of Physics ·Armin Dadgar, F. Schulze, Marion Wienecke, Aniko Gadanecz, J. Bläsing, Peter Veit, Thomas Hempel, A. Diez	2007	120
11	Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range Applied Physics Letters ·Christoph Hums, J. Bläsing, Armin Dadgar, A. Diez, Thomas Hempel, Jürgen H. Christen, A. Krost, Katharina Lorenz	2007	119
12	Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Armin Dadgar, André Strittmatter, J. Bläsing, M. Poschenrieder, Oscar Edel Contreras, Peter Veit, Till Riemann, Frank Bertram	2003	113
13	The origin of stress reduction by low-temperature AlN interlayers Applied Physics Letters ·J. Bläsing, A. Reiher, Armin Dadgar, A. Diez, A. Krost	2002	112
14	Growth of blue GaN LED structures on 150-mm Si(111) Journal of Crystal Growth ·Armin Dadgar, Christoph Hums, A. Diez, J. Bläsing, A. Krost	2006	110
15	Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers Journal of Crystal Growth ·A. Reiher, J. Bläsing, Armin Dadgar, A. Diez, A. Krost	2002	98
16	Reduction of stress at the initial stages of GaN growth on Si(111) Applied Physics Letters ·Armin Dadgar, M. Poschenrieder, A. Reiher, J. Bläsing, J. Christen, A. Krtschil, Tilo Finger, Thomas Hempel	2003	97
17	Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer Applied Physics Letters ·Armin Dadgar, J. Christen, Till Riemann, Shachar E. Richter, J. Bläsing, A. Diez, A. Krost, Assadullah Alam	2001	95
18	Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic Applied Physics Letters ·A. Krtschil, Armin Dadgar, Nikolay Oleynik, J. Bläsing, A. Diez, A. Krost	2005	84
19	MOVPE growth of high-quality AlN Journal of Crystal Growth ·Armin Dadgar, A. Krost, J. Christen, Barbara Bastek, Frank Bertram, A. Krtschil, Thomas Hempel, J. Bläsing	2006	78
20	MOVPE growth of GaN on Si – Substrates and strain Thin Solid Films ·Armin Dadgar, Peter Veit, F. Schulze, J. Bläsing, A. Krtschil, Hartmut Witte, A. Diez, Thomas Hempel	2006	78

About J. Bläsing

J. Bläsing is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 192 papers that have together received 6.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (126 papers), Ga2O3 and related materials (67 papers), ZnO doping and properties (54 papers), Metal and Thin Film Mechanics (52 papers), Semiconductor materials and devices (47 papers), Semiconductor Quantum Structures and Devices (30 papers), Silicon Nanostructures and Photoluminescence (18 papers) and Nanowire Synthesis and Applications (16 papers). The work is most often cited by research in Condensed Matter Physics (3.8k citations), Electronic, Optical and Magnetic Materials (2.2k citations), Materials Chemistry (3.7k citations), Mechanics of Materials (1.3k citations) and Electrical and Electronic Engineering (3.0k citations). J. Bläsing has collaborated with scholars based in Germany, United States and Japan. Frequent co-authors include A. Krost, Armin Dadgar, A. Diez, Margit Zacharias, Michael H. Schmidt, R. Scholz, U. Kahler, Jacqueline Heitmann, Peter Veit and Thomas Hempel. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, physica status solidi (b), Journal of Applied Physics and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J. Bläsing

J. Bläsing's Hit Papers

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Fields of papers citing papers by J. Bläsing

All Works

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