J. Bläsing

7.5k citations

190 papers · 6.3k · 2 hit papers · h-index 39

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 126
- GaN-based semiconductor devices and materials 124
Electrical and Electronic Engineering 86
- Semiconductor materials and devices 47

Co-authors: A. Krost (120 shared papers)A. Dadgar (102 shared papers)A. Diez (31 shared papers)Margit Zacharias (17 shared papers)Michael Schmidt (2 shared papers)J. Heitmann (1 shared paper)U. Kahler (1 shared paper)R. Scholz (1 shared paper)
Journals: Applied Physics Letters (40 papers)Journal of Crystal Growth (24 papers)physica status solidi (b) (16 papers)Journal of Applied Physics (12 papers)Japanese Journal of Applied Physics (11 papers)
Partner nations: Germany United States Japan

In The Last Decade

J. Bläsing

185 papers receiving 6.1k citations

J. Bläsing's Hit Papers

align trajectories log scale

Binary copper oxide semiconductors: From materials towards devices 2012 · 613 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2012 physica status solidi (b)
2002 Applied Physics Letters

Peers

Countries citing papers authored by J. Bläsing

Since Specialization

Citations

This map shows the geographic impact of J. Bläsing's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Bläsing with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Bläsing more than expected).

Fields of papers citing papers by J. Bläsing

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Bläsing. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Bläsing. The network helps show where J. Bläsing may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Bläsing, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Bläsing Line = papers co-authored together J. Bläsing links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 190 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach Applied Physics Letters ·Margit Zacharias, J. Heitmann, R. Scholz, U. Kahler, Michael Schmidt, J. Bläsing Hit paper breakdown →	2002	646
2	Binary copper oxide semiconductors: From materials towards devices physica status solidi (b) ·Bertrand Meyer, A. Polity, Daniel Reppin, Martin Becker, P. Hering, Peter J. Klar, Th. Sander, Christian T. Reindl, J. Benz, Martin Eickhoff, Christian Heiliger, Markus Heinemann, J. Bläsing, A. Krost, S. Shokovets, Christian Müller, Carsten Ronning Hit paper breakdown →	2012	613
3	Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness Japanese Journal of Applied Physics ·A. Dadgar, J. Bläsing, Annette Diez, A. Alam, M. Heuken, A. Krost	2000	277
4	Thermal crystallization of amorphous Si/SiO2 superlattices Applied Physics Letters ·Margit Zacharias, J. Bläsing, Peter Veit, L. Tsybeskov, Karl D. Hirschman, Philippe M. Fauchet	1999	158
5	Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking Applied Physics Letters ·A. Dadgar, M. Poschenrieder, J. Bläsing, Karsten Fehse, A. Diez, A. Krost	2002	158
6	High Si and Ge n-type doping of GaN doping - Limits and impact on stress Applied Physics Letters ·S. Fritze, A. Dadgar, H. De Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost	2012	153
7	Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to1020 cm−3 Physical Review B ·Martin Feneberg, Sarah Osterburg, Karsten Lange, Christian Lidig, B. Garke, R. Goldhahn, E. Richter, Carsten Netzel, M. Neumann, N. Esser, S. Fritze, H. De Witte, J. Bläsing, A. Dadgar, A. Krost	2014	145
8	High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111) Applied Physics Letters ·A. Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, Martin Neuburger, E. Kohn, I. Daumiller, M. Kunze	2004	126
9	MOVPE growth of GaN on Si(111) substrates Journal of Crystal Growth ·A. Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F. A. Ponce, E. Kohn, A. Krost	2002	119
10	Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range Applied Physics Letters ·Christoph Hums, J. Bläsing, A. Dadgar, A. Diez, Thomas Hempel, J. Christen, A. Krost, K. Lorenz, E. Alves	2007	118
11	Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction New Journal of Physics ·A. Dadgar, F. Schulze, M. Wienecke, Aniko Gadanecz, J. Bläsing, Peter Veit, Thomas Hempel, A. Diez, J. Christen, A. Krost	2007	112
12	Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, Peter Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, Thomas Hempel, Tilo Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, A. Krost	2003	107
13	Growth of blue GaN LED structures on 150-mm Si(111) Journal of Crystal Growth ·A. Dadgar, Christoph Hums, A. Diez, J. Bläsing, A. Krost	2006	106
14	The origin of stress reduction by low-temperature AlN interlayers Applied Physics Letters ·J. Bläsing, A. Reiher, A. Dadgar, A. Diez, A. Krost	2002	105
15	Reduction of stress at the initial stages of GaN growth on Si(111) Applied Physics Letters ·A. Dadgar, M. Poschenrieder, A. Reiher, J. Bläsing, J. Christen, A. Krtschil, Tilo Finger, Thomas Hempel, A. Diez, A. Krost	2003	94
16	Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers Journal of Crystal Growth ·A. Reiher, J. Bläsing, A. Dadgar, A. Diez, A. Krost	2002	88
17	Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer Applied Physics Letters ·A. Dadgar, J. Christen, T. Riemann, Shachar Richter, J. Bläsing, A. Diez, A. Krost, A. Alam, M. Heuken	2001	87
18	Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic Applied Physics Letters ·A. Krtschil, A. Dadgar, N. Oleynik, J. Bläsing, A. Diez, A. Krost	2005	82
19	MOVPE growth of GaN on Si – Substrates and strain Thin Solid Films ·A. Dadgar, Peter Veit, F. Schulze, J. Bläsing, A. Krtschil, H. De Witte, A. Diez, Thomas Hempel, J. Christen, R. Clos, A. Krost	2006	74
20	MOVPE growth of high-quality AlN Journal of Crystal Growth ·A. Dadgar, A. Krost, J. Christen, B. Bastek, F. Bertram, A. Krtschil, Thomas Hempel, J. Bläsing, U. Haboeck, A. Hoffmann	2006	74

About J. Bläsing

J. Bläsing is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 190 papers that have together received 6.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (124 papers), Ga2O3 and related materials (67 papers), ZnO doping and properties (54 papers), Metal and Thin Film Mechanics (52 papers), Semiconductor materials and devices (47 papers), Semiconductor Quantum Structures and Devices (28 papers), Silicon Nanostructures and Photoluminescence (18 papers) and Nanowire Synthesis and Applications (16 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (2.2k citations), Materials Chemistry (3.5k citations), Mechanics of Materials (1.3k citations) and Electrical and Electronic Engineering (2.8k citations). J. Bläsing has collaborated with scholars based in Germany, United States and Japan. Frequent co-authors include A. Krost, A. Dadgar, A. Diez, Margit Zacharias, Michael Schmidt, J. Heitmann, U. Kahler, R. Scholz, Peter Veit and Thomas Hempel. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, physica status solidi (b), Journal of Applied Physics and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J. Bläsing

J. Bläsing's Hit Papers

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