Sang‐Bum Kim
Impact in
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- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Polymers and Plastics top 1%
- Transition Metal Oxide Nanomaterials
Papers in
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- Advanced Memory and Neural Computing 66
- Ferroelectric and Negative Capacitance Devices 21
- Semiconductor materials and devices 14
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- Phase-change materials and chalcogenides 46
- Co-authors
- H.‐S. Philip Wong (23 shared papers)Kenneth E. Goodson (10 shared papers)Mehdi Asheghi (10 shared papers)John P. Reifenberg (8 shared papers)Simone Raoux (7 shared papers)Jiale Liang (4 shared papers)Bipin Rajendran (2 shared papers)James H. Cauraugh (4 shared papers)
- Journals
- IEEE Electron Device Letters (5 papers)Advanced Science (4 papers)IEEE Transactions on Electron Devices (4 papers)Advanced Electronic Materials (3 papers)Physical Review B (3 papers)
- Partner nations
- South KoreaUnited StatesJapan
In The Last Decade
Sang‐Bum Kim
221 papers receiving 6.9k citations
Sang‐Bum Kim's Hit Papers
Peers
Comparison fields: 5 of 180
- Electrical and Electronic Engineering 4.5k
- Polymers and Plastics 1.1k
- Rehabilitation 376
- Materials Chemistry 2.4k
- Cellular and Molecular Neuroscience 806
Countries citing papers authored by Sang‐Bum Kim
This map shows the geographic impact of Sang‐Bum Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sang‐Bum Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sang‐Bum Kim more than expected).
Fields of papers citing papers by Sang‐Bum Kim
This network shows the impact of papers produced by Sang‐Bum Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sang‐Bum Kim. The network helps show where Sang‐Bum Kim may publish in the future.
Co-authors
The 25 scholars most cited alongside Sang‐Bum Kim, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 255 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Phase Change Memory Hit paper breakdown → | 2010 | 1418 |
| 2 | Neuromorphic computing using non-volatile memory Hit paper breakdown → | 2016 | 831 |
| 3 | Some Effective Techniques for Naive Bayes Text Classification Hit paper breakdown → | 2006 | 370 |
| 4 | 2016 | 288 | |
| 5 | 2000 | 261 | |
| 6 | 2018 | 231 | |
| 7 | 2002 | 184 | |
| 8 | 2014 | 165 | |
| 9 | 2015 | 137 | |
| 10 | 2007 | 108 | |
| 11 | 2002 | 107 | |
| 12 | 2009 | 102 | |
| 13 | 2020 | 98 | |
| 14 | 2013 | 80 | |
| 15 | 2009 | 76 | |
| 16 | 2018 | 75 | |
| 17 | 2022 | 75 | |
| 18 | 2021 | 70 | |
| 19 | 2009 | 67 | |
| 20 | 2017 | 62 |
About Sang‐Bum Kim
Sang‐Bum Kim is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Artificial Intelligence and Surgery, having authored 255 papers that have together received 7.2k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (66 papers), Phase-change materials and chalcogenides (46 papers), Ferroelectric and Negative Capacitance Devices (21 papers), Neural Networks and Reservoir Computing (15 papers), Korean Urban and Social Studies (14 papers), Semiconductor materials and devices (14 papers), Transition Metal Oxide Nanomaterials (13 papers) and Polymer composites and self-healing (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.5k citations), Polymers and Plastics (1.1k citations), Rehabilitation (376 citations), Materials Chemistry (2.4k citations) and Cellular and Molecular Neuroscience (806 citations). Sang‐Bum Kim has collaborated with scholars based in South Korea, United States and Japan. Frequent co-authors include H.‐S. Philip Wong, Kenneth E. Goodson, Mehdi Asheghi, John P. Reifenberg, Simone Raoux, Jiale Liang, Bipin Rajendran, James H. Cauraugh, Geoffrey W. Burr and Hae‐Chang Rim. Their work appears in journals such as IEEE Electron Device Letters, Advanced Science, IEEE Transactions on Electron Devices, Advanced Electronic Materials and Physical Review B.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.