E. I. Shek

406 citations

70 papers · 288 · h-index 10

Impact in

Materials Chemistry
- Silicon Nanostructures and Photoluminescence
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 65
- Silicon and Solar Cell Technologies 48
- Thin-Film Transistor Technologies 15
- Semiconductor materials and devices 10
- Integrated Circuits and Semiconductor Failure Analysis 9
Materials Chemistry 54
- Silicon Nanostructures and Photoluminescence 53

Co-authors: Н. А. Соболев (67 shared papers)A. M. Emel’yanov (16 shared papers)V. I. Vdovin (19 shared papers)T. G. Yugova (7 shared papers)O. B. Gusev (5 shared papers)D. I. Tetelbaum (8 shared papers)В. И. Сахаров (15 shared papers)I. T. Serenkov (15 shared papers)
Journals: Physica B Condensed Matter (3 papers)Journal of Luminescence (2 papers)Materials Science and Engineering B (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)Semiconductor Science and Technology (1 paper)
Partner nations: Russia China United States

In The Last Decade

E. I. Shek

67 papers receiving 284 citations

Peers

Countries citing papers authored by E. I. Shek

Since Specialization

Citations

This map shows the geographic impact of E. I. Shek's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. I. Shek with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. I. Shek more than expected).

Fields of papers citing papers by E. I. Shek

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. I. Shek. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. I. Shek. The network helps show where E. I. Shek may publish in the future.

Co-authors

The 25 scholars most cited alongside E. I. Shek, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. I. Shek Line = papers co-authored together E. I. Shek links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature Applied Physics Letters ·Н. А. Соболев, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, A. M. Emel’yanov	1998	30
2	Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes Physica B Condensed Matter ·Н. А. Соболев, A. M. Emel’yanov, E. I. Shek, V. I. Vdovin	2003	17
3	Dislocation-related luminescence in Er-implanted silicon Journal of Luminescence ·Н. А. Соболев, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, A. M. Emel’yanov	1998	12
4	Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing Semiconductors ·Н. А. Соболев, A. M. Emel’yanov, В. И. Сахаров, I. T. Serenkov, E. I. Shek, D. I. Tetelbaum	2007	11
5	Influence of the deformation on the luminescence properties of Si light‐emitting diodes Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Н. А. Соболев, A. M. Emel’yanov, E. I. Shek, O. V. Feklisova, E. B. Yakimov, Т.V. Kotereva	2005	11
6	Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength Physics of the Solid State ·A. M. Emel’yanov, Н. А. Соболев, E. I. Shek	2004	10
7	Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Н. А. Соболев, A. M. Emel’yanov, E. I. Shek, V. I. Vdovin	2003	10
8	Si:Si LEDs with room-temperature dislocation-related luminescence Semiconductors ·Н. А. Соболев, A. E. Kalyadin, M. V. Konovalov, П. Н. Аруев, V. V. Zabrodskiy, E. I. Shek, K. F. Shtel’makh, Alexey Mikhaylov, D. I. Tetelbaum	2016	10
9	Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si Physics of the Solid State ·Н. А. Соболев, A. M. Emel’yanov, E. I. Shek, V. I. Vdovin	2004	9
10	Extended defects in Si wafers implanted with ions of rare-earth elements Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·V. I. Vdovin, T. G. Yugova, Н. А. Соболев, E. I. Shek, M.I. Makovijchuk, E. O. Parshin	1999	9
11	Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus Semiconductors ·Н. А. Соболев, A. M. Emel’yanov, В. В. Забродский, N. V. Zabrodskaya, В. Л. Суханов, E. I. Shek	2007	7
12	Photoluminescence in silicon implanted with silicon ions at amorphizing doses Semiconductors ·Н. А. Соболев, A. E. Kalyadin, R. N. Kyutt, В. И. Сахаров, I. T. Serenkov, E. I. Shek, V. V. Afrosimov, D. I. Tetelbaum	2011	7
13	Photoluminescence associated with {113} defects in oxygen‐implanted silicon physica status solidi (a) ·Н. А. Соболев, A. E. Kalyadin, E. I. Shek, K. F. Shtel’makh, V. I. Vdovin, А. К. Гутаковский, Л. И. Федина	2017	6
14	Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon Semiconductors ·О. В. Александров, A. O. Zakhar’in, Н. А. Соболев, E. I. Shek, M. I. Makoviichuk, E. O. Parshin	1998	6
15	Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon Semiconductors ·Alexey Mikhaylov, A. I. Belov, Д. С. Королев, А. О. Тимофеева, V. K. Vasiliev, А. Н. Шушунов, А. И. Бобров, Д. А. Павлов, D. I. Tetelbaum, E. I. Shek	2014	6
16	A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon Journal of Luminescence ·V. V. Emtsev, D. S. Poloskin, E. I. Shek, Н. А. Соболев	1998	5
17	Optical and Electrical Properties of Si:Er Light-Emitting Structures Materials science forum ·Н. А. Соболев, O.V. Alexandrov, M. S. Bresler, O. B. Gusev, E. I. Shek, M.I. Makovijchuk, E. O. Parshin	1995	5
18	Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium Semiconductors ·V. V. Emtsev, D. S. Poloskin, Н. А. Соболев, E. I. Shek, Jürgen Michel, Lionel C. Kimerling	1999	5
19	Extended Defects in O+-Implanted Si Layers and Their Luminescence Crystallography Reports ·V. I. Vdovin, Л. И. Федина, А. К. Гутаковский, A. E. Kalyadin, E. I. Shek, K. F. Shtel’makh, Н. А. Соболев	2021	5
20	Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers Physica B Condensed Matter ·Н. А. Соболев, A. M. Emel’yanov, В. И. Сахаров, I. T. Serenkov, E. I. Shek, (unknown), W. V. Lundin, N. M. Shmidt, A. S. Usikov, E. E. Zavarin	2003	5

About E. I. Shek

E. I. Shek is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Computational Mechanics and Biomedical Engineering, having authored 70 papers that have together received 288 indexed citations. Recurring topics across this work include Silicon Nanostructures and Photoluminescence (53 papers), Silicon and Solar Cell Technologies (48 papers), Semiconductor materials and interfaces (36 papers), Thin-Film Transistor Technologies (15 papers), Ion-surface interactions and analysis (15 papers), Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and GaN-based semiconductor devices and materials (4 papers). The work is most often cited by research in Materials Chemistry (242 citations), Atomic and Molecular Physics, and Optics (137 citations), Electrical and Electronic Engineering (250 citations), Computational Mechanics (63 citations) and Structural Biology (3 citations). E. I. Shek has collaborated with scholars based in Russia, China and United States. Frequent co-authors include Н. А. Соболев, A. M. Emel’yanov, V. I. Vdovin, T. G. Yugova, O. B. Gusev, D. I. Tetelbaum, В. И. Сахаров, I. T. Serenkov, D. S. Poloskin and V. V. Emtsev. Their work appears in journals such as Physica B Condensed Matter, Journal of Luminescence, Materials Science and Engineering B, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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E. I. Shek

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