Ben Heying

5.6k citations

49 papers · 4.9k · 1 hit paper · h-index 26

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 48
Electronic, Optical and Magnetic Materials 22
- Ga2O3 and related materials 22

Co-authors: James S. Speck (34 shared papers)Steven P. DenBaars (23 shared papers)P. Fini (19 shared papers)Stacia Keller (15 shared papers)Umesh Kumar Mishra (24 shared papers)Bernd P. Keller (5 shared papers)David Kapolnek (5 shared papers)E. J. Tarsa (5 shared papers)
Journals: Applied Physics Letters (12 papers)Journal of Applied Physics (6 papers)Journal of Crystal Growth (4 papers)Japanese Journal of Applied Physics (3 papers)Journal of Physics D Applied Physics (2 papers)
Partner nations: United States Germany Sweden

In The Last Decade

Ben Heying

49 papers receiving 4.8k citations

Ben Heying's Hit Papers

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films 1996 · 759 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

1996 Applied Physics Letters

Peers

Countries citing papers authored by Ben Heying

Since Specialization

Citations

This map shows the geographic impact of Ben Heying's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ben Heying with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ben Heying more than expected).

Fields of papers citing papers by Ben Heying

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ben Heying. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ben Heying. The network helps show where Ben Heying may publish in the future.

Co-authors

The 25 scholars most cited alongside Ben Heying, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ben Heying Line = papers co-authored together Ben Heying links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 49 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films Applied Physics Letters ·Ben Heying, Xuemei Wu, Stacia Keller, Y. Li, David Kapolnek, Bernd P. Keller, Steven P. DenBaars, James S. Speck Hit paper breakdown →	1996	759
2	Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy Journal of Applied Physics ·Ben Heying, Robert Averbeck, L. F. Chen, E. Haus, H. Riechert, James S. Speck	2000	427
3	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, Christopher R. Elsass, James P. Ibbetson, Rama Vetury, Ben Heying, P. Fini, E. Haus, Steven P. DenBaars	1999	378
4	Dislocation mediated surface morphology of GaN Journal of Applied Physics ·Ben Heying, E. J. Tarsa, Christopher R. Elsass, P. Fini, Steven P. DenBaars, James S. Speck	1999	368
5	Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy Journal of Applied Physics ·E. J. Tarsa, Ben Heying, Xuemei Wu, P. Fini, Steven P. DenBaars, James S. Speck	1997	356
6	Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire Applied Physics Letters ·David Kapolnek, X. H. Wu, Ben Heying, Stacia Keller, Bernd P. Keller, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck	1995	292
7	Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates Applied Physics Letters ·Julia W. P. Hsu, Michael Manfra, R. J. Molnar, Ben Heying, James S. Speck	2002	271
8	Dislocation generation in GaN heteroepitaxy Journal of Crystal Growth ·X. H. Wu, P. Fini, E. J. Tarsa, Ben Heying, Stacia Keller, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck	1998	260
9	Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition Applied Physics Letters ·Stacia Keller, Bernd P. Keller, Yifeng Wu, Ben Heying, David Kapolnek, James S. Speck, Umesh Kumar Mishra, Steven P. DenBaars	1996	242
10	Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN Applied Physics Letters ·X. H. Wu, David Kapolnek, E. J. Tarsa, Ben Heying, Stacia Keller, Bernd P. Keller, Umesh Kumar Mishra, Steven P. DenBaars	1996	200
11	Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters ·Ben Heying, I. P. Smorchkova, Christiane Poblenz, Christopher R. Elsass, P. Fini, S. Den Baars, Umesh Kumar Mishra, James S. Speck	2000	172
12	Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers Applied Physics Letters ·I. P. Smorchkova, Stacia Keller, S. Heikman, Christopher R. Elsass, Ben Heying, P. Fini, James S. Speck, Umesh Kumar Mishra	2000	112
13	Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·I. P. Smorchkova, E. Haus, Ben Heying, P. Kozodoy, P. Fini, James P. Ibbetson, Stacia Keller, Steven P. DenBaars	2000	109
14	Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition Japanese Journal of Applied Physics ·X. H. Wu, P. Fini, Stacia Keller, E. J. Tarsa, Ben Heying, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck	1996	96
15	Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN Journal of Electronic Materials ·Bernd P. Keller, Stacia Keller, David Kapolnek, Wei Jiang, Yuan Wu, Hisashi Masui, X. H. Wu, Ben Heying	1995	92
16	High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters ·Christopher R. Elsass, I. P. Smorchkova, Ben Heying, E. Haus, P. Fini, Kevin D. Maranowski, James P. Ibbetson, Stacia Keller	1999	83
17	Characterization of an AlGaN/GaN two-dimensional electron gas structure Journal of Applied Physics ·A. Saxler, P. Debray, Ronald E. Perrin, Said Elhamri, William C. Mitchel, Christopher R. Elsass, I. P. Smorchkova, Ben Heying	2000	58
18	Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Adrian Hierro, Aaron R. Arehart, Ben Heying, M. Hansen, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck, Steven A. Ringel	2002	54
19	Capture Kinetics of Electron Traps in MBE-Grown n-GaN physica status solidi (b) ·Adrian Hierro, Aaron R. Arehart, Ben Heying, Mark W. Hansen, James S. Speck, Umesh Kumar Mishra, Steven P. DenBaars, Steven A. Ringel	2001	49
20	Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Christiane Poblenz, Patrick Waltereit, Siddharth Rajan, Umesh Kumar Mishra, James S. Speck, Ping-Chieh Chin, I. P. Smorchkova, Ben Heying	2005	48

About Ben Heying

Ben Heying is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 49 papers that have together received 4.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (22 papers), ZnO doping and properties (18 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (12 papers), Metal and Thin Film Mechanics (10 papers), Radio Frequency Integrated Circuit Design (8 papers) and Silicon Carbide Semiconductor Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (4.5k citations), Electronic, Optical and Magnetic Materials (2.2k citations), Materials Chemistry (2.2k citations), Mechanics of Materials (1.1k citations) and Atomic and Molecular Physics, and Optics (1.3k citations). Ben Heying has collaborated with scholars based in United States, Germany and Sweden. Frequent co-authors include James S. Speck, Steven P. DenBaars, P. Fini, Stacia Keller, Umesh Kumar Mishra, Bernd P. Keller, David Kapolnek, E. J. Tarsa, Christopher R. Elsass and Xuemei Wu. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Japanese Journal of Applied Physics and Journal of Physics D Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Ben Heying's Hit Papers

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About Ben Heying

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