D. J. As

4.4k citations

242 papers · 3.8k · h-index 35

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 206
- GaN-based semiconductor devices and materials 206
Electrical and Electronic Engineering 140
- Semiconductor materials and devices 95
- Silicon Carbide Semiconductor Technologies 20

Co-authors: K. Lischka (124 shared papers)D. Schikora (54 shared papers)T. Frey (29 shared papers)Jörg Schörmann (22 shared papers)R. Goldhahn (23 shared papers)T. Schupp (23 shared papers)B. Schöttker (19 shared papers)A. Tabata (19 shared papers)
Journals: Applied Physics Letters (39 papers)Journal of Applied Physics (23 papers)physica status solidi (b) (19 papers)Journal of Crystal Growth (18 papers)Semiconductor Science and Technology (7 papers)
Partner nations: Germany Brazil United States

In The Last Decade

D. J. As

239 papers receiving 3.8k citations

Peers

Countries citing papers authored by D. J. As

Since Specialization

Citations

This map shows the geographic impact of D. J. As's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. J. As with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. J. As more than expected).

Fields of papers citing papers by D. J. As

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. J. As. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. J. As. The network helps show where D. J. As may publish in the future.

Co-authors

The 25 scholars most cited alongside D. J. As, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. J. As Line = papers co-authored together D. J. As links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 242 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The near band edge photoluminescence of cubic GaN epilayers Applied Physics Letters ·D. J. As, F. Schmilgus, C. Wang, B. Schöttker, D. Schikora, K. Lischka	1997	133
2	Epitaxial growth and optical transitions of cubic GaN films Physical review. B, Condensed matter ·D. Schikora, M. Hankeln, D. J. As, K. Lischka, Th. Litz, A. Waag, T. Buhrow, F. Henneberger	1996	126
3	Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films Journal of Applied Physics ·R. Pässler, E. Griebl, H. Riepl, G. Lautner, Susanne E. Bauer, H. Preis, W. Gebhardt, B. Buda, D. J. As, D. Schikora, K. Lischka, Konstantinos Papagelis, S. Ves	1999	118
4	Phase separation suppression in InGaN epitaxial layers due to biaxial strain Applied Physics Letters ·A. Tabata, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, A. Kharchenko, T. Frey, D. J. As, D. Schikora, K. Lischka, J. Furthmüller, F. Bechstedt	2002	100
5	Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces Applied Physics Letters ·P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, Jörg Schörmann, D. J. As, K. Lischka, Daisuke Muto, H. Naoi, Yasushi Nanishi, Hai Lu, W. J. Schaff	2007	98
6	Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering Physical Review Letters ·V. Lemos, E. F. da Silveira, J. R. Leite, A. Tabata, R. Trentin, L. M. R. Scolfaro, T. Frey, D. J. As, D. Schikora, K. Lischka	2000	91
7	Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations Applied Physics Letters ·G. Kaczmarczyk, A. Kaschner, Stephanie Reich, A. Hoffmann, C. Thomsen, D. J. As, Alisson Padilha de Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert	2000	82
8	Molecular beam epitaxy of phase pure cubic InN Applied Physics Letters ·Jörg Schörmann, D. J. As, K. Lischka, P. Schley, R. Goldhahn, S. F. Li, W. Löffler, M. Hetterich, H. Kalt	2006	76
9	Investigations on the Stranski–Krastanow growth of CdSe quantum dots Applied Physics Letters ·D. Schikora, S. Schwedhelm, D. J. As, K. Lischka, D. Litvinov, Andreas Rosenauer, Dagmar Gerthsen, M. Straßburg, A. Hoffmann, D. Bimberg	2000	76
10	18 GHz all-optical frequency locking and clock recovery using a self-pulsating two-section DFB-laser IEEE Photonics Technology Letters ·U. Feiste, D. J. As, A. Ehrhardt	1994	62
11	Electroluminescence of a cubic GaN/GaAs (001) p–n junction Applied Physics Letters ·D. J. As, A. G. Richter, J. Busch, M. Lübbers, Jürgen Mimkes, K. Lischka	2000	62
12	Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells Applied Physics Letters ·Shufeng Li, Jörg Schörmann, D. J. As, K. Lischka	2007	62
13	Optical properties of cubic GaN from 1 to 20 eV Physical Review B ·Martin Feneberg, Marcus Röppischer, Christoph Cobet, N. Esser, Jörg Schörmann, T. Schupp, D. J. As, Florian Hörich, J. Bläsing, A. Krost, R. Goldhahn	2012	59
14	Refractive index and gap energy of cubic InxGa1−xN Applied Physics Letters ·R. Goldhahn, J. Scheiner, S. Shokhovets, T. Frey, Ulrich Köhler, D. J. As, K. Lischka	2000	57
15	Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics Microelectronics Journal ·D. J. As	2008	56
16	Band offsets in cubic GaN/AlN superlattices Physical Review B ·C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, Maria Tchernycheva, F. H. Julien, W. G. Schmidt, K. Lischka, D. J. As	2011	55
17	Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions Applied Physics Letters ·V. A. Chitta, J. A. H. Coaquira, J.R.L. Fernandez, Celso de Araújo Duarte, J. R. Leite, D. Schikora, D. J. As, K. Lischka, E. Abramof	2004	54
18	Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities Journal of Applied Physics ·Marcus Röppischer, R. Goldhahn, Georg Rossbach, P. Schley, Christoph Cobet, N. Esser, T. Schupp, K. Lischka, D. J. As	2009	53
19	Optical constants of cubic GaN in the energy range of 1.5–3.7 eV Journal of Applied Physics ·Ulrich Köhler, D. J. As, B. Schöttker, T. Frey, K. Lischka, J. Scheiner, S. Shokhovets, R. Goldhahn	1999	50
20	Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range Physical Review B ·H. Machhadani, Maria Tchernycheva, S. Sakr, Lorenzo Rigutti, R. Colombelli, E. Warde, C. Mietze, D. J. As, F. H. Julien	2011	50

About D. J. As

D. J. As is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 242 papers that have together received 3.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (206 papers), Semiconductor materials and devices (95 papers), Semiconductor Quantum Structures and Devices (91 papers), Ga2O3 and related materials (85 papers), ZnO doping and properties (63 papers), Metal and Thin Film Mechanics (29 papers), Silicon Carbide Semiconductor Technologies (20 papers) and Quantum and electron transport phenomena (13 papers). The work is most often cited by research in Condensed Matter Physics (2.8k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Atomic and Molecular Physics, and Optics (1.7k citations), Materials Chemistry (1.6k citations) and Electrical and Electronic Engineering (1.6k citations). D. J. As has collaborated with scholars based in Germany, Brazil and United States. Frequent co-authors include K. Lischka, D. Schikora, T. Frey, Jörg Schörmann, R. Goldhahn, T. Schupp, B. Schöttker, A. Tabata, Ulrich Köhler and J. R. Leite. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, physica status solidi (b), Journal of Crystal Growth and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

D. J. As

Impact in

Papers in i

In The Last Decade

D. J. As

Peers

Countries citing papers authored by D. J. As

Fields of papers citing papers by D. J. As

All Works

About D. J. As

Explore authors with similar magnitude of impact

Papers in