Anying Wei

1.4k citations

54 papers · 1.2k · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Electrostatic Discharge in Electronics
- Advanced Memory and Neural Computing
- Low-power high-performance VLSI design
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 50
- Semiconductor materials and devices 45
- Advancements in Semiconductor Devices and Circuit Design 42
- Silicon Carbide Semiconductor Technologies 14
- Integrated Circuits and Semiconductor Failure Analysis 13
- Silicon and Solar Cell Technologies 7
- 3D IC and TSV technologies 4
- Radiation Effects in Electronics 4
- Electrostatic Discharge in Electronics 3
Software 2

Co-authors: Steven L. Kosier (11 shared papers)Ronald Schrimpf (11 shared papers)W.E. Combs (8 shared papers)Daniel M Fleetwood (6 shared papers)M. DeLaus (8 shared papers)D.A. Antoniadis (10 shared papers)Ronald L. Pease (4 shared papers)R.N. Nowlin (2 shared papers)
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Nuclear Science (3 papers)IEEE Transactions on Electron Devices (3 papers)Materials Science and Engineering B (2 papers)Free Radical Biology and Medicine (1 paper)
Partner nations: United States Germany Canada

In The Last Decade

Anying Wei

50 papers receiving 1.1k citations

Peers

Countries citing papers authored by Anying Wei

Since Specialization

Citations

This map shows the geographic impact of Anying Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anying Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anying Wei more than expected).

Fields of papers citing papers by Anying Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anying Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anying Wei. The network helps show where Anying Wei may publish in the future.

Co-authors

The 25 scholars most cited alongside Anying Wei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Anying Wei Line = papers co-authored together Anying Wei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 54 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates IEEE Transactions on Nuclear Science ·Daniel M Fleetwood, Steven L. Kosier, R.N. Nowlin, Ronald Schrimpf, R.A. Reber, M. DeLaus, Peter S. Winokur, Anying Wei	1994	243
2	Charge separation for bipolar transistors IEEE Transactions on Nuclear Science ·Steven L. Kosier, Ronald Schrimpf, R.N. Nowlin, Daniel M Fleetwood, M. DeLaus, Ronald L. Pease, W.E. Combs, Anying Wei	1993	172
3	Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs IEEE Transactions on Electron Devices ·Steven L. Kosier, Anying Wei, Ronald Schrimpf, Daniel M Fleetwood, M. DeLaus, Ronald L. Pease, W.E. Combs	1995	102
4	Bounding the total-dose response of modern bipolar transistors IEEE Transactions on Nuclear Science ·Steven L. Kosier, W.E. Combs, Anying Wei, Ronald Schrimpf, Daniel M Fleetwood, M. DeLaus, Ronald L. Pease	1994	73
5	HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation Kaustubh Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay, Veena Chaudhary, N. Nanaware, B. Rajamohnan, Tsutomu Sato, Malcolm J. Bevan	2013	58
6	Effect of floating-body charge on SOI MOSFET design IEEE Transactions on Electron Devices ·Anying Wei, Melanie J. Sherony, D.A. Antoniadis	1998	46
7	Minimizing floating-body-induced threshold voltage variation in partially depleted SOI CMOS IEEE Electron Device Letters ·Anying Wei, D.A. Antoniadis, Lawrence A. Bair	1996	45
8	Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies L.T. Su, John Pellerin, Shih-Fen Huang, Mukesh V. Khare, Dominic J. Schepis, Ken Rim, Andrew Waite, Takahiro Satô	2005	43
9	Dose-rate effects on radiation-induced bipolar junction transistor gain degradation Applied Physics Letters ·Anying Wei, Steven L. Kosier, Ronald Schrimpf, Daniel M Fleetwood, W.E. Combs	1994	42
10	Transient behavior of the kink effect in partially-depleted SOI MOSFET's IEEE Electron Device Letters ·Anying Wei, Melanie J. Sherony, D.A. Antoniadis	1995	40
11	Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's IEEE Transactions on Electron Devices ·Anying Wei, Steven L. Kosier, Ronald Schrimpf, W.E. Combs, M. DeLaus	1995	33
12	Multiple Stress Memorization In Advanced SOI CMOS Technologies Anying Wei, Maciej Wiatr, A. Mowry, A. U. Gehring, Roman Boschke, Chris C. Scott, Jan Hoentschel, Stefan Duenkel	2007	31
13	Measurement of transient effects in SOI DRAM/SRAM access transistors IEEE Electron Device Letters ·Anying Wei, D.A. Antoniadis	1996	31
14	Architecting advanced technologies for 14nm and beyond with 3D FinFET transistors for the future SoC applications Ali Reza Keshavarzi, Dinesh Somasekhar, Mahbub Rashed, Shibly Ahmed, K. Maitra, Robert J. Miller, Andreas Knorr, Jin Yeon Cho	2011	19
15	Challenges of analog and I/O scaling in 10nm SoC technology and beyond Anying Wei, Jagar Singh, G. Bouche, Mark Zaleski, Rod Augur, Biswanath Senapati, Jason E. Stephens, Irene Kong Cheh Lin	2014	16
16	Design methodology for minimizing hysteretic V/sub T/-variation in partially-depleted SOI CMOS Anying Wei, D.A. Antoniadis	2002	13
17	Taking SOI substrates and low-k dielectrics into high-volume microprocessor production David Greenlaw, Gert Burbach, Thomas Feudel, Frank Feustel, Kai Frohberg, Falk Graetsch, G. Graßhoff, C. Hartig	2004	13
18	Advantages and challenges of high performance CMOS on SOI Mario M. Pelella, W. Maszara, Saraswathi Sundararajan, Soumendu Sinha, Anying Wei, D.-H. Ju, W.G. En, S. Krishnan	2002	12
19	Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx IEEE Electron Device Letters ·Kaustubh Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay, Tsutomu Sato, Malcolm J. Bevan, Bijesh Rajamohanan, Anying Wei, A. Noori	2012	11
20	SOI Devices and Technology European Solid-State Device Research Conference ·D.A. Antoniadis, Anying Wei, Anthony Lochtefeld	1999	11

About Anying Wei

Anying Wei is a scholar working on Electrical and Electronic Engineering, Software, Information Systems, Mechanics of Materials and Biochemistry, having authored 54 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Silicon Carbide Semiconductor Technologies (14 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Silicon and Solar Cell Technologies (7 papers), 3D IC and TSV technologies (4 papers), Radiation Effects in Electronics (4 papers) and Electrostatic Discharge in Electronics (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Hardware and Architecture (56 citations), Atomic and Molecular Physics, and Optics (48 citations), Radiation (13 citations) and Biomedical Engineering (60 citations). Anying Wei has collaborated with scholars based in United States, Germany and Canada. Frequent co-authors include Steven L. Kosier, Ronald Schrimpf, W.E. Combs, Daniel M Fleetwood, M. DeLaus, D.A. Antoniadis, Ronald L. Pease, R.N. Nowlin, Melanie J. Sherony and Peter S. Winokur. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, IEEE Transactions on Electron Devices, Materials Science and Engineering B and Free Radical Biology and Medicine.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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