A. E. Cherenkov

613 citations

21 papers · 555 · 1 hit paper · h-index 6

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Materials Chemistry top 10%
- ZnO doping and properties
- Nanoparticles: synthesis and applications
- Silicon Nanostructures and Photoluminescence

Papers in

Condensed Matter Physics 11
- GaN-based semiconductor devices and materials 11
Electrical and Electronic Engineering 10
- Silicon Carbide Semiconductor Technologies 10

Co-authors: Mikhail V. Chukichev (2 shared papers)Ya. I. Alivov (3 shared papers)E. V. Kalinina (2 shared papers)B. M. Ataev (3 shared papers)A. K. Omaev (3 shared papers)Darren M. Bagnall (2 shared papers)David C. Look (3 shared papers)D. Tsvetkov (6 shared papers)
Journals: Journal of Crystal Growth (1 paper)Applied Physics Letters (1 paper)MRS Internet Journal of Nitride Semiconductor Research (1 paper)Materials Science and Engineering B (1 paper)Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena (1 paper)
Partner nations: Russia United States United Kingdom

In The Last Decade

A. E. Cherenkov

20 papers receiving 535 citations

A. E. Cherenkov's Hit Papers

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Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates 2003 · 422 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2003 Applied Physics Letters

Peers

Countries citing papers authored by A. E. Cherenkov

Since Specialization

Citations

This map shows the geographic impact of A. E. Cherenkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Cherenkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Cherenkov more than expected).

Fields of papers citing papers by A. E. Cherenkov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Cherenkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Cherenkov. The network helps show where A. E. Cherenkov may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Cherenkov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Cherenkov Line = papers co-authored together A. E. Cherenkov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates Applied Physics Letters ·Ya. I. Alivov, E. V. Kalinina, A. E. Cherenkov, David C. Look, B. M. Ataev, A. K. Omaev, Mikhail V. Chukichev, Darren M. Bagnall Hit paper breakdown →	2003	422
2	Strain relaxation in GaN layers grown on porous GaN sublayers MRS Internet Journal of Nitride Semiconductor Research ·Marina G. Mynbaeva, A. N. Titkov, A. Kryzhanovski, I. S. Kotousova, A. S. Zubrilov, Valentin V. Ratnikov, V. Yu. Davydov, Nikolay I. Kuznetsov	1999	47
3	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, Andrey E. Nikolaev, И.П. Никитина, Nikolay I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	17
4	High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study Materials Science and Engineering B ·J. Chaudhuri, C. Ignatiev, С. И. Степанов, D. Tsvetkov, A. E. Cherenkov, Vladimir A. Dmitriev, Zofia U. Rek	2000	12
5	Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contact Semiconductors ·Yu. A. Goldberg, O. V. Konstantinov, Andrey E. Nikolaev, А. В. Фомин, A. E. Cherenkov +2 others	2001	11
6	The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates Journal of Crystal Growth ·T.S. Cheng, Sergei Novikov, V. Lebedev, R. P. Campion, N.J. Jeffs, Yu. Melnik, D. Tsvetkov, С. И. Степанов	1999	8
7	Study of the properties of a two-dimensional electron gas in p −-3C-SiC/n +-6H-SiC heterostructures at low temperatures Semiconductors ·A. A. Lebedev, D. K. Nelson, B. S. Razbirin, I. I. Saǐdashev, Alexey N. Kuznetsov∥, A. E. Cherenkov	2005	6
8	Growth of SiC and GaN on Porous Buffer Layers Materials science forum ·Marina G. Mynbaeva, N.S. Savkina, Alla S. Tregubova, Mikhail P. Scheglov, Alexander Alexandrovich Lebedev, A. S. Zubrilov, A. N. Titkov, A.K Kryganovskii	2000	4
9	Silicon Carbide Devices for Active Electronics and Optoelectronics Vladimir A. Dmitriev, P. A. Ivanov, Ya. V. Morozenko, V. E. Chelnokov, A. E. Cherenkov	1991	3
10	Temperature and current dependence of the intensity of the edge injection electroluminescence of SiC p-n structures Semiconductors ·M. M. Anikin, Anatoly M. Strel’chuk, Alexander L. Syrkin, V. E. Chelnokov, A. E. Cherenkov	1994	3
11	Properties of GaN Homoepitaxial Layers Grown on GaN Epitaxial Wafers MRS Proceedings ·Vladimir A. Dmitriev, Andrey E. Nikolaev, A. E. Cherenkov, D. Tsvetkov, Sergey Stepanov, Nikolay I. Kuznetsov, И.П. Никитина, A.P. Kovarsky	1998	3
12	6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Anatoly M. Strel’chuk, Alexander Alexandrovich Lebedev, A. E. Cherenkov, Alexey N. Kuznetsov, Alla S. Tregubova, Mikhail P. Scheglov, Lev M. Sorokin, Shigehiro Nishino +1 other	2005	3
13	Heteropolytype structures with SiC quantum dots Technical Physics Letters ·A. A. Lebedev, В. Н. Петров, A. N. Titkov, Lev M. Sorokin, Alla S. Tregubova, G. N. Mosina, A. E. Cherenkov, M. P. Shcheglov	2005	3
14	A study of n +-6H/n-3C/p +-6H-SiC heterostructures grown by sublimation epitaxy Semiconductors ·Alexander Alexandrovich Lebedev, Anatoly M. Strel’chuk, Sergei Yu. Davydov, A. E. Cherenkov, Alexey N. Kuznetsov, Alla S. Tregubova, Lev M. Sorokin, M. P. Shcheglov	2006	3
15	Liquid Phase Epitaxy of SiC-AlN Solid Solutions Springer proceedings in physics ·Vladimir A. Dmitriev, L. B. Elfimov, I. Yu. Linkov, Ya. V. Morozenko, И.П. Никитина, V. E. Chelnokov, A. E. Cherenkov, М. А. Чернов	1992	2
16	Forward and reverse current in 6H SiC p-n structures grown by container-free liquid epitaxy Semiconductors ·Anatoly M. Strel’chuk, Valery V. Evstropov, Valentin A. Dmitriev, A. E. Cherenkov	1995	2
17	Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Grigory A. Onushkin, Andrey E. Nikolaev, Oleg Ledyaev, A. E. Cherenkov, E. V. Kalinina, И.П. Никитина, O. V. Kovalenkov, Vladimir A. Dmitriev +1 other	2002	2
18	ZnO/AlGaN Ultraviolet Light Emitting Diodes NATO science series. Series II, Mathematics, physics and chemistry ·A. E. Cherenkov, Grigory A. Onushkin, Ya. I. Alivov, David C. Look, B. M. Ataev, A. K. Omaev, C. M. Chukichev +1 other	2005	2
19	GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates MRS Proceedings ·Marina G. Mynbaeva, A. N. Titkov, A. Kryzhanovski, A. S. Zubrilov, Valentin V. Ratnikov, V. Yu. Davydov, Nikolay I. Kuznetsov, Karim Mynbaev	1999	1
20	A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD Semiconductors ·Elena V. Bogdanova, Anna Volkova, A. E. Cherenkov, Alexander Alexandrovich Lebedev, Roumen Kakanakov, Lilyana Kolaklieva, G. A. Sarov, T. Cholakova	2005	1

About A. E. Cherenkov

A. E. Cherenkov is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Nuclear Energy and Engineering and Waste Management and Disposal, having authored 21 papers that have together received 555 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (11 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Condensed Matter Physics (181 citations), Materials Chemistry (337 citations), Atomic and Molecular Physics, and Optics (64 citations), Electrical and Electronic Engineering (76 citations) and Renewable Energy, Sustainability and the Environment (11 citations). A. E. Cherenkov has collaborated with scholars based in Russia, United States and United Kingdom. Frequent co-authors include Mikhail V. Chukichev, Ya. I. Alivov, E. V. Kalinina, B. M. Ataev, A. K. Omaev, Darren M. Bagnall, David C. Look, D. Tsvetkov, Vladimir A. Dmitriev and A. N. Titkov. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, Materials Science and Engineering B and Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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A. E. Cherenkov

A. E. Cherenkov's Hit Papers

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