W.E. Ansley
Impact in
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- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Electromagnetic Compatibility and Noise Suppression
- Advancements in PLL and VCO Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Papers in
-
- Radio Frequency Integrated Circuit Design 10
- Advancements in Semiconductor Devices and Circuit Design 7
- Electromagnetic Compatibility and Noise Suppression 7
- Silicon Carbide Semiconductor Technologies 3
- Semiconductor materials and devices 3
- 3D IC and TSV technologies 2
- Electrostatic Discharge in Electronics 2
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- Energetic Materials and Combustion 2
- Co-authors
- John Cressler (12 shared papers)Guofu Niu (10 shared papers)C.S. Webster (7 shared papers)Shiming Zhang (7 shared papers)S.D. Clark (2 shared papers)J. M. R. Roldan (2 shared papers)David L. Harame (6 shared papers)D. Nguyen-Ngoc (1 shared paper)
- Journals
- IEEE Transactions on Electron Devices (3 papers)IEEE Transactions on Nuclear Science (2 papers)IEEE Transactions on Magnetics (1 paper)IEEE Transactions on Microwave Theory and Techniques (1 paper)
- Partner nations
- United StatesSweden
In The Last Decade
W.E. Ansley
15 papers receiving 271 citations
Peers
Comparison fields: 5 of 16
- Electrical and Electronic Engineering 289
- Hardware and Architecture 11
- Atomic and Molecular Physics, and Optics 43
- Biomedical Engineering 39
- Nuclear and High Energy Physics 7
Countries citing papers authored by W.E. Ansley
This map shows the geographic impact of W.E. Ansley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W.E. Ansley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W.E. Ansley more than expected).
Fields of papers citing papers by W.E. Ansley
This network shows the impact of papers produced by W.E. Ansley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W.E. Ansley. The network helps show where W.E. Ansley may publish in the future.
Co-authors
The 25 scholars most cited alongside W.E. Ansley, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2001 | 67 | |
| 2 | 1997 | 55 | |
| 3 | 1998 | 43 | |
| 4 | 1999 | 35 | |
| 5 | 1998 | 25 | |
| 6 | 2000 | 21 | |
| 7 | Noise Modeling and SiGe Profile Design Tradeoffs for RF Applications | 2000 | 17 |
| 8 | 2003 | 8 | |
| 9 | 2002 | 5 | |
| 10 | 2003 | 4 | |
| 11 | 2002 | 3 | |
| 12 | 2002 | 3 | |
| 13 | 2004 | 3 | |
| 14 | 1996 | 2 | |
| 15 | 2002 | 1 | |
| 16 | 1993 | 1 |
About W.E. Ansley
W.E. Ansley is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials, Nuclear and High Energy Physics, Control and Systems Engineering and Aerospace Engineering, having authored 16 papers that have together received 293 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (10 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Electromagnetic Compatibility and Noise Suppression (7 papers), Silicon Carbide Semiconductor Technologies (3 papers), Semiconductor materials and devices (3 papers), Energetic Materials and Combustion (2 papers), 3D IC and TSV technologies (2 papers) and Electrostatic Discharge in Electronics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (289 citations), Hardware and Architecture (11 citations), Atomic and Molecular Physics, and Optics (43 citations), Biomedical Engineering (39 citations) and Nuclear and High Energy Physics (7 citations). W.E. Ansley has collaborated with scholars based in United States and Sweden. Frequent co-authors include John Cressler, Guofu Niu, C.S. Webster, Shiming Zhang, S.D. Clark, J. M. R. Roldan, David L. Harame, D. Nguyen-Ngoc, D. Ahlgren and Robert A. Groves. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, IEEE Transactions on Magnetics and IEEE Transactions on Microwave Theory and Techniques.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.