D. Greenberg

2.2k citations

54 papers · 1.1k · h-index 20

Impact in

Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Silicon Carbide Semiconductor Technologies
- Microwave Engineering and Waveguides
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 53
- Radio Frequency Integrated Circuit Design 37
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 25
- 3D IC and TSV technologies 12
- Electrostatic Discharge in Electronics 7
- Electromagnetic Compatibility and Noise Suppression 6
Atomic and Molecular Physics, and Optics 6
- Semiconductor Quantum Structures and Devices 6

Co-authors: Jesús A. del Alamo (12 shared papers)G. Freeman (19 shared papers)Jae-Sung Rieh (9 shared papers)B. Jagannathan (17 shared papers)D. Ahlgren (17 shared papers)S. Subbanna (14 shared papers)D.L. Harame (13 shared papers)Andy Stricker (2 shared papers)
Journals: IEEE Transactions on Electron Devices (4 papers)IEEE Electron Device Letters (3 papers)Solid-State Electronics (2 papers)Applied Physics Letters (2 papers)Applied Surface Science (1 paper)
Partner nations: United States South Korea Australia

In The Last Decade

D. Greenberg

53 papers receiving 1.0k citations

Peers

Countries citing papers authored by D. Greenberg

Since Specialization

Citations

This map shows the geographic impact of D. Greenberg's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Greenberg with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Greenberg more than expected).

Fields of papers citing papers by D. Greenberg

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Greenberg. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Greenberg. The network helps show where D. Greenberg may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Greenberg, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Greenberg Line = papers co-authored together D. Greenberg links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 54 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Interconnects in the third dimension Proceedings - ACM IEEE Design Automation Conference ·Kerry Bernstein, Ruchir Puri, Anthony Young, Paul Andry, Jerome Cann, Phil Emma, D. Greenberg, Wilfried Haensch, Mike Ignatowski, Steven J. Koester, J. H. Magerlein	2007	94
2	SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications IEEE Transactions on Microwave Theory and Techniques ·Jae-Sung Rieh, B. Jagannathan, D. Greenberg, Mounir Meghelli, Alexander Rylyakov, F Guarin, Zhijian Yang, D. Ahlgren, G. Freeman, P.E. Cottrell, D.L. Harame	2004	61
3	A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure IEEE Electron Device Letters ·S.J. Jeng, B. Jagannathan, Jae-Sung Rieh, J. Johnson, K. Schonenberg, D. Greenberg, Andy Stricker, H. Chen, Marwan Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna	2001	60
4	Velocity saturation in the extrinsic device: a fundamental limit in HFET's IEEE Transactions on Electron Devices ·D. Greenberg, Jesús A. del Alamo	1994	59
5	Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors Jae-Sung Rieh, D. Greenberg, B. Jagannathan, G. Freeman, S. Subbanna	2002	50
6	Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace D. Ahlgren, M. Gilbert, D. Greenberg, Jen-Tzong Jeng, J. Malinowski, D. Nguyen-Ngoc, K. Schonenberg, K. Stein, R. Groves, K. Walter, G. Hueckel, D. Colavito, G. Freeman, D.A. Sunderland, D.L. Harame, B.S. Meyerson	2002	48
7	Structure Optimization of Trench-Isolated SiGe HBTs for Simultaneous Improvements in Thermal and Electrical Performances IEEE Transactions on Electron Devices ·Jae-Sung Rieh, D. Greenberg, Qiqi Liu, Alvin Joseph, G. Freeman, D. Ahlgren	2005	46
8	Nonlinear source and drain resistance in recessed-gate heterostructure field-effect transistors IEEE Transactions on Electron Devices ·D. Greenberg, Jesús A. del Alamo	1996	46
9	Scaling of SiGe Heterojunction Bipolar Transistors Proceedings of the IEEE ·Jae-Sung Rieh, D. Greenberg, Andy Stricker, G. Freeman	2005	45
10	Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process Hongmei Li, B. Jagannathan, Jing Wang, Tai-Chi Su, Susan L. Sweeney, John J. Pekarik, Yun Shi, D. Greenberg, Zhenrong Jin, R. Groves, L. Wagner, S.M. Csutak	2007	41
11	Structural dependence of the thermal resistance of trench-isolated bipolar transistors Jae-Sung Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman, S. Subbanna	2003	39
12	The revolution in SiGe: impact on device electronics Applied Surface Science ·D.L. Harame, Steven J. Koester, G. Freeman, P Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, James Dunn, D. Greenberg, Alvin Joseph, F. Anderson, Jae-Sung Rieh, St. Onge, Douglas Coolbaugh, V. Ramachandran, John D. Cressler, S. Subbanna	2004	39
13	Electron mobility in p-GaAs by time of flight Applied Physics Letters ·R. K. Ahrenkiel, D. J. Dunlavy, D. Greenberg, Jenny Schlüpmann, H. C. Hamaker, H.F. MacMillan	1987	37
14	A SiGe HBT BiCMOS technology for mixed signal RF applications D. Ahlgren, G. Freeman, S. Subbanna, R. Groves, D. Greenberg, J. Malinowski, D. Nguyen-Ngoc, S.J. Jeng, K. Stein, K. Schonenberg, D. Kiesling, Martin Bartels, S. Wu, D.L. Harame, B.S. Meyerson	2002	36
15	Interconnects in the Third Dimension: Design Challenges for 3D ICs Proceedings - ACM IEEE Design Automation Conference ·Kerry Bernstein, Paul Andry, Jerome Cann, Phil Emma, D. Greenberg, Wilfried Haensch, Mike Ignatowski, Steven J. Koester, J. H. Magerlein, Ruchir Puri, Anthony Young	2007	32
16	A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications IEEE Electron Device Letters ·D. Greenberg, Jesús A. del Alamo, J. P. Harbison, L. T. Florez	1991	27
17	Fundamental Power and Frequency Limits of Deeply-Scaled CMOS for RF Power Applications Jörg Scholvin, D. Greenberg, Jesús A. del Alamo	2006	24
18	RFCMOS technology from 0.25μm to 65nm: the state of the art John J. Pekarik, D. Greenberg, B. Jagannathan, R. Groves, Joyelle Jones, Raminderpal Singh, A. Chinthakindi, X. Wang, M. Breitwisch, Douglas Coolbaugh, P.E. Cottrell, J. Florkey, G. Freeman, R. Krishnasamy	2004	23
19	Noise performance of a low base resistance 200 GHz SiGe technology D. Greenberg, B. Jagannathan, Susan L. Sweeney, G. Freeman, D. Ahlgren	2003	23
20	A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer IEEE Electron Device Letters ·D. Greenberg, Jesús A. del Alamo, R. Bhat	1992	20

About D. Greenberg

D. Greenberg is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Surgery and Computer Networks and Communications, having authored 54 papers that have together received 1.1k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (37 papers), Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers), 3D IC and TSV technologies (12 papers), Electrostatic Discharge in Electronics (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Electromagnetic Compatibility and Noise Suppression (6 papers) and GaN-based semiconductor devices and materials (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Atomic and Molecular Physics, and Optics (229 citations), Condensed Matter Physics (83 citations), Hardware and Architecture (40 citations) and Biomedical Engineering (107 citations). D. Greenberg has collaborated with scholars based in United States, South Korea and Australia. Frequent co-authors include Jesús A. del Alamo, G. Freeman, Jae-Sung Rieh, B. Jagannathan, D. Ahlgren, S. Subbanna, D.L. Harame, Andy Stricker, Jörg Scholvin and Steven J. Koester. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Solid-State Electronics, Applied Physics Letters and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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