W. Ting

986 citations

51 papers · 735 · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
Surfaces, Coatings and Films top 10%

Papers in

Electrical and Electronic Engineering 51
- Semiconductor materials and devices 50
- Advancements in Semiconductor Devices and Circuit Design 26
- Advanced Memory and Neural Computing 11
- Thin-Film Transistor Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 5
- Silicon Carbide Semiconductor Technologies 4
Materials Chemistry 10

Co-authors: Jinho Ahn (14 shared papers)Dim‐Lee Kwong (20 shared papers)D. L. Kwong (10 shared papers)G. Q. Lo (22 shared papers)Hyunsang Hwang (4 shared papers)D. L. Kwong (11 shared papers)S. Lin (5 shared papers)John Lee (1 shared paper)
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Letters (12 papers)Electronics Letters (6 papers)IEEE Transactions on Electron Devices (5 papers)Journal of Applied Physics (3 papers)
Partner nations: United States Taiwan Australia

In The Last Decade

W. Ting

47 papers receiving 700 citations

Peers

Countries citing papers authored by W. Ting

Since Specialization

Citations

This map shows the geographic impact of W. Ting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Ting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Ting more than expected).

Fields of papers citing papers by W. Ting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Ting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Ting. The network helps show where W. Ting may publish in the future.

Co-authors

The 25 scholars most cited alongside W. Ting, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Ting Line = papers co-authored together W. Ting links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 51 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications IEEE Electron Device Letters ·Jinho Ahn, W. Ting, Dim‐Lee Kwong	1992	85
2	MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O IEEE Electron Device Letters ·W. Ting, G. Q. Lo, Jinho Ahn, T. Chu, Dim‐Lee Kwong	1991	66
3	Composition and growth kinetics of ultrathin SiO2 films formed by oxidizing Si substrates in N2O Applied Physics Letters ·W. Ting, Hyunsang Hwang, J. Lee, D. L. Kwong	1990	62
4	Growth kinetics of ultrathin SiO2 films fabricated by rapid thermal oxidation of Si substrates in N2O Journal of Applied Physics ·W. Ting, Hyunsang Hwang, John Lee, D. L. Kwong	1991	51
5	Study of the composition of thin dielectrics grown on Si in a pure N2O ambient Applied Physics Letters ·T. Chu, W. Ting, Jinho Ahn, S. Lin, D. L. Kwong	1991	44
6	Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O IEEE Electron Device Letters ·Hyunsang Hwang, W. Ting, Dim‐Lee Kwong, J. Lee	1991	39
7	High Quality Ultrathin Gate Dielectrics Formation by Thermal Oxidation of Si in N 2 O Journal of The Electrochemical Society ·Junhyeok Ahn, W. Ting, T. Chu, S. Lin, D. L. Kwong	1991	33
8	High quality thin gate oxide prepared by annealing low-pressure chemical vapor deposited SiO2 in N2O Applied Physics Letters ·Jinho Ahn, W. Ting, T. Chu, S. Lin, D. L. Kwong	1991	25
9	A Novel Simple CBCM Method Free From Charge Injection-Induced Errors IEEE Electron Device Letters ·Yao‐Wen Chang, Hsuan‐Chun Chang, C.H. Hsieh, H.C. Lai, Tsung‐Chien Lu, W. Ting, J. Ku, C.-Y. Lu	2004	22
10	Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O Hyunsang Hwang, W. Ting, Dim‐Lee Kwong, J. Lee	2002	21
11	P-channel MOSFET's with ultrathin N/sub 2/O gate oxides IEEE Electron Device Letters ·G. Q. Lo, W. Ting, Jinho Ahn, D. L. Kwong	1992	21
12	Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxides Applied Physics Letters ·G. Q. Lo, D. K. Shih, W. Ting, D. L. Kwong	1989	19
13	Improved Performance and Reliability of MOSFETs with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient G. Q. Lo, W. Ting, Jinho Ahn, D. L. Kwong	1991	18
14	Radiation hardened metal-oxide-semiconductor devices with gate dielectrics grown by rapid thermal processing in O2 with diluted NF3 Applied Physics Letters ·Jinho Ahn, G. Q. Lo, W. Ting, D. L. Kwong, John Kuehne, C. W. Magee	1991	17
15	MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/ IEEE Electron Device Letters ·G. Q. Lo, W. Ting, Dim‐Lee Kwong, John Kuehne, C. W. Magee	1990	17
16	High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2/ IEEE Electron Device Letters ·Jinho Ahn, W. Ting, D. L. Kwong	1992	16
17	Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology IEEE Electron Device Letters ·N. K. Zous, M.Y. Lee, Wen-Jer Tsai, Albert Kuo, L.T. Huang, Tsung‐Chien Lu, C.J. Liu, T. Wang, Wei Lü, W. Ting, J. Ku, C.-Y. Lu	2004	16
18	Thin fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/ IEEE Transactions on Electron Devices ·G. Q. Lo, W. Ting, Jinho Ahn, Dim‐Lee Kwong, John Kuehne	1992	16
19	Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing Applied Physics Letters ·G. Q. Lo, W. Ting, D. K. Shih, D. L. Kwong	1990	15
20	Interconnect Capacitance Characterization Using Charge-Injection-Induced Error-Free (CIEF) Charge-Based Capacitance Measurement (CBCM) IEEE Transactions on Semiconductor Manufacturing ·Yao‐Wen Chang, Hsuan‐Chun Chang, Tien‐Chang Lu, Ya‐Chin King, W. Ting, Y.-H.J. Ku, C.-Y. Lu	2006	15

About W. Ting

W. Ting is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 51 papers that have together received 735 indexed citations. Recurring topics across this work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers), Advanced Memory and Neural Computing (11 papers), Thin-Film Transistor Technologies (7 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Copper Interconnects and Reliability (6 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (711 citations), Surfaces, Coatings and Films (48 citations), Ceramics and Composites (31 citations), Condensed Matter Physics (53 citations) and Materials Chemistry (206 citations). W. Ting has collaborated with scholars based in United States, Taiwan and Australia. Frequent co-authors include Jinho Ahn, Dim‐Lee Kwong, D. L. Kwong, G. Q. Lo, Hyunsang Hwang, D. L. Kwong, S. Lin, John Lee, John Kuehne and C.-Y. Lu. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Electronics Letters, IEEE Transactions on Electron Devices and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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