W. E. Hoke

2.9k citations

134 papers · 2.4k · h-index 26

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 115
- Semiconductor materials and devices 60
- Radio Frequency Integrated Circuit Design 32
- Semiconductor Lasers and Optical Devices 21
- Advancements in Semiconductor Devices and Circuit Design 19
- Advanced Semiconductor Detectors and Materials 16
- Photonic and Optical Devices 14
Atomic and Molecular Physics, and Optics 88
- Semiconductor Quantum Structures and Devices 79

Co-authors: P. J. Lemonias (51 shared papers)Tomás Palacios (3 shared papers)Eduardo M. Chumbes (2 shared papers)J.W. Chung (1 shared paper)A. Torabi (25 shared papers)T.E. Kazior (30 shared papers)P. S. Lyman (23 shared papers)P.F. Marsh (25 shared papers)
Journals: Applied Physics Letters (11 papers)Electronics Letters (7 papers)IEEE Electron Device Letters (6 papers)Journal of Applied Physics (6 papers)The Journal of Chemical Physics (5 papers)
Partner nations: United States France United Kingdom

In The Last Decade

W. E. Hoke

130 papers receiving 2.2k citations

Peers

Countries citing papers authored by W. E. Hoke

Since Specialization

Citations

This map shows the geographic impact of W. E. Hoke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. E. Hoke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. E. Hoke more than expected).

Fields of papers citing papers by W. E. Hoke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. E. Hoke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. E. Hoke. The network helps show where W. E. Hoke may publish in the future.

Co-authors

The 25 scholars most cited alongside W. E. Hoke, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. E. Hoke Line = papers co-authored together W. E. Hoke links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	AlGaN/GaN HEMT With 300-GHz $f_{\max}$ IEEE Electron Device Letters ·J.W. Chung, W. E. Hoke, Eduardo M. Chumbes, Tomás Palacios	2010	332
2	Phonon scattering in strained transition layers for GaN heteroepitaxy Physical Review B ·Jungwan Cho, Yiyang Li, W. E. Hoke, David Altman, Mehdi Asheghi, Kenneth E. Goodson	2014	109
3	Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke, P. J. Lemonias, J. J. Mosca, P. S. Lyman, A. Torabi, P.F. Marsh, R.A. McTaggart, S.M. Lardizabal, K.T. Hetzler	1999	84
4	Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke, R.V. Chelakara, John Bettencourt, T.E. Kazior, J. R. LaRoche, T. D. Kennedy, J. J. Mosca, A. Torabi, A. J. Kerr, H.-S. Lee, Tomás Palacios	2011	75
5	Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs IEEE Electron Device Letters ·Mark Somerville, Jesús A. del Alamo, W. E. Hoke	1996	70
6	Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films Journal of Crystal Growth ·W. E. Hoke, P. J. Lemonias, D. G. Weir	1991	64
7	Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride Applied Physics Letters ·W. E. Hoke, P. J. Lemonias	1985	63
8	Monolithic integration of InP-based transistors on Si substrates using MBE Journal of Crystal Growth ·W.K. Liu, D. Lubyshev, J. M. Fastenau, Ying Wu, Mayank T. Bulsara, Eugene A. Fitzgerald, Miguel Urteaga, W. Ha, J. Bergman, B. Brar, W. E. Hoke, J. R. LaRoche, K.J. Herrick, T.E. Kazior, David Clark, D. A. Smith, R. Thompson, Charlotte Drazek, Nicolas Daval	2008	55
9	Metal-organic vapor deposition of CdTe and HgCdTe films Journal of Applied Physics ·W. E. Hoke, R. Traczewski	1983	53
10	Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates Applied Physics Letters ·W. E. Hoke, P. J. Lemonias, R. Traczewski	1984	50
11	Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride Journal of Applied Physics ·R. Korenstein, W. E. Hoke, P. J. Lemonias, K. T. HIGA, Daniel C. Harris	1987	45
12	A π, τ, π/2 type pulse sequence method for the determination of T1 in rotational transitions The Journal of Chemical Physics ·H. Mäder, J. Ekkers, W. E. Hoke, W. H. Flygare	1975	45
13	Low-temperature metalorganic growth of CdTe and HgTe films using ditertiarybutyltelluride Applied Physics Letters ·W. E. Hoke, P. J. Lemonias	1986	43
14	An examination of organometallic thermal stability and its relevance to low-temperature MOCVD growth of HgCdTe Journal of materials research/Pratt's guide to venture capital sources ·W. E. Hoke, P. J. Lemonias, R. Korenstein	1988	41
15	High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate T.E. Kazior, R.V. Chelakara, W. E. Hoke, John Bettencourt, Tomás Palacios, H. S. Lee	2011	41
16	High indium metamorphic HEMT on a GaAs substrate Journal of Crystal Growth ·W. E. Hoke, T. D. Kennedy, A. Torabi, C.S. Whelan, P.F. Marsh, R. Leoni, Chao Xu, K. C. Hsieh	2003	36
17	The measurement and interpretation of T1 and T2 in the inversion doublets of 15NH3 and the rotational transitions in OCS The Journal of Chemical Physics ·W. E. Hoke, David R. Bauer, J. Ekkers, W. H. Flygare	1976	36
18	Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke, P. S. Lyman, C.S. Whelan, J. J. Mosca, A. Torabi, K. L. Chang, K. C. Hsieh	2000	31
19	Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates IEEE Journal of Solid-State Circuits ·C.S. Whelan, T.E. Kazior, P.F. Marsh, W. E. Hoke, R.A. McTaggart, P. S. Lyman, P. J. Lemonias, S.M. Lardizabal, R.E. Leoni, S.J. Lichwala	2000	31
20	Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Lubyshev, J. M. Fastenau, Yuh‐Renn Wu, W. K. Liu, Mayank T. Bulsara, Eugene A. Fitzgerald, W. E. Hoke	2008	30

About W. E. Hoke

W. E. Hoke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Biomedical Engineering, having authored 134 papers that have together received 2.4k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (79 papers), Semiconductor materials and devices (60 papers), GaN-based semiconductor devices and materials (34 papers), Radio Frequency Integrated Circuit Design (32 papers), Semiconductor Lasers and Optical Devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Advanced Semiconductor Detectors and Materials (16 papers) and Photonic and Optical Devices (14 papers). The work is most often cited by research in Condensed Matter Physics (823 citations), Atomic and Molecular Physics, and Optics (1.3k citations), Electrical and Electronic Engineering (1.9k citations), Electronic, Optical and Magnetic Materials (283 citations) and Materials Chemistry (524 citations). W. E. Hoke has collaborated with scholars based in United States, France and United Kingdom. Frequent co-authors include P. J. Lemonias, Tomás Palacios, Eduardo M. Chumbes, J.W. Chung, A. Torabi, T.E. Kazior, P. S. Lyman, P.F. Marsh, W. H. Flygare and C.S. Whelan. Their work appears in journals such as Applied Physics Letters, Electronics Letters, IEEE Electron Device Letters, Journal of Applied Physics and The Journal of Chemical Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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