T.P. Ma

4.1k citations

104 papers · 3.4k · 1 hit paper · h-index 26

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials

Papers in

Electrical and Electronic Engineering 102
- Semiconductor materials and devices 94
- Advancements in Semiconductor Devices and Circuit Design 72
- Integrated Circuits and Semiconductor Failure Analysis 46
- Ferroelectric and Negative Capacitance Devices 14
- Advanced Memory and Neural Computing 9
- Silicon Carbide Semiconductor Technologies 7
Atomic and Molecular Physics, and Optics 15
- Semiconductor materials and interfaces 8

Co-authors: Jin‐Ping Han (2 shared papers)Weihang Zhu (5 shared papers)Tatsuki Tamagawa (10 shared papers)Xin Guo (1 shared paper)Artur P. Balasinski (12 shared papers)Taisuke Furukawa (2 shared papers)Yasushiro Nishioka (5 shared papers)M. Gibson (2 shared papers)
Journals: IEEE Electron Device Letters (30 papers)IEEE Transactions on Electron Devices (10 papers)IEEE Transactions on Nuclear Science (7 papers)Journal of Applied Physics (4 papers)Applied Surface Science (3 papers)
Partner nations: United States Japan China

In The Last Decade

T.P. Ma

98 papers receiving 3.3k citations

T.P. Ma's Hit Papers

align trajectories log scale

Why is nonvolatile ferroelectric memory field-effect transistor still elusive? 2002 · 465 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2002 IEEE Electron Device Letters

Peers

Countries citing papers authored by T.P. Ma

Since Specialization

Citations

This map shows the geographic impact of T.P. Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.P. Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.P. Ma more than expected).

Fields of papers citing papers by T.P. Ma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.P. Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.P. Ma. The network helps show where T.P. Ma may publish in the future.

Co-authors

The 25 scholars most cited alongside T.P. Ma, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T.P. Ma Line = papers co-authored together T.P. Ma links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 104 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Why is nonvolatile ferroelectric memory field-effect transistor still elusive? IEEE Electron Device Letters ·T.P. Ma, Jin‐Ping Han Hit paper breakdown →	2002	465
2	Making silicon nitride film a viable gate dielectric IEEE Transactions on Electron Devices ·T.P. Ma	1998	324
3	Effect of Al inclusion in HfO 2 on the physical and electrical properties of the dielectrics IEEE Electron Device Letters ·Weihang Zhu, Tatsuki Tamagawa, M. Gibson, Taisuke Furukawa, T.P. Ma	2002	233
4	Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics IEEE Transactions on Electron Devices ·Weihang Zhu, Jin‐Ping Han, T.P. Ma	2004	200
5	Charge trapping in ultrathin hafnium oxide IEEE Electron Device Letters ·Weihang Zhu, T.P. Ma, Sufi Zafar, Tatsuki Tamagawa	2002	146
6	Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric IEEE Electron Device Letters ·Yee‐Chia Yeo, Qiang Lü, Wen-Chin Lee, Tsu‐Jae King, Chenming Calvin Hu, Xiewen Wang, Xin Guo, T.P. Ma	2000	143
7	Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content IEEE Electron Device Letters ·Xin Guo, T.P. Ma	1998	134
8	High-quality oxide/nitride/oxide gate insulator for GaN MIS structures IEEE Transactions on Electron Devices ·B. Gaffey, L. J. Guido, Xiaoxiong Wang, T.P. Ma	2001	104
9	Polarity dependent gate tunneling currents in dual-gate CMOSFETs IEEE Transactions on Electron Devices ·Ying Shi, T.P. Ma, Srinivasa Daya Prasad, Sumit Singh Dhanda	1998	102
10	Temperature Dependence of Channel Mobility in>tex<$hbox HfO_2$>/tex<-Gated NMOSFETs IEEE Electron Device Letters ·Weihang Zhu, T.P. Ma	2004	101
11	Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/ IEEE Electron Device Letters ·Yasushiro Nishioka, E.F. Da Silva, Yanzhuang Wang, T.P. Ma	1988	97
12	Lateral profiling of oxide charge and interface traps near MOSFET junctions IEEE Transactions on Electron Devices ·W. Chen, Artur P. Balasinski, T.P. Ma	1993	85
13	Hot-electron hardened Si-gate MOSFET utilizing F implantation IEEE Electron Device Letters ·Yasushiro Nishioka, Kiyonori OHYU, Yuzuru Ohji, N. Natuaki, Kazuma Mukai, T.P. Ma	1989	85
14	On physical models for gate oxide breakdown IEEE Electron Device Letters ·S. Holland, I.C. Chen, T.P. Ma, Chenming Calvin Hu	1984	85
15	Kilovolt AlGaN/GaN HEMTs as Switching Devices physica status solidi (a) ·N.-Q. Zhang, Brendan Moran, Steven P. DenBaars, Umesh Kumar Mishra, Xiaoxiong Wang, T.P. Ma	2001	63
16	HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport Wenjuan Zhu, T.P. Ma, Tatsuki Tamagawa, Yunxiang Di, Jin‐Hwan Kim, Roy Carruthers, M. Gibson, Taisuke Furukawa	2002	50
17	Surface-state spectra from thick-oxide MOS tunnel junctions Solid-State Electronics ·T.P. Ma, Richard C. Barker	1974	45
18	Special reliability features for Hf-based high-/spl kappa/ gate dielectrics IEEE Transactions on Device and Materials Reliability ·T.P. Ma, H. Bu, Xiaoxiong Wang, L. Song, Wei He, Miaomiao Wang, H.‐H. Tseng, Phil J. Tobin	2005	44
19	1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps IEEE Electron Device Letters ·Ming-Horn Tsai, T.P. Ma	1993	39
20	Effects of erase source bias on Flash EPROM device reliability IEEE Transactions on Electron Devices ·K. Tamer San, Çağlar Kaya, T.P. Ma	1995	35

About T.P. Ma

T.P. Ma is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 104 papers that have together received 3.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (94 papers), Advancements in Semiconductor Devices and Circuit Design (72 papers), Integrated Circuits and Semiconductor Failure Analysis (46 papers), Ferroelectric and Negative Capacitance Devices (14 papers), Advanced Memory and Neural Computing (9 papers), Semiconductor materials and interfaces (8 papers), Silicon Carbide Semiconductor Technologies (7 papers) and GaN-based semiconductor devices and materials (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.2k citations), Materials Chemistry (959 citations), Condensed Matter Physics (215 citations), Atomic and Molecular Physics, and Optics (483 citations) and Electronic, Optical and Magnetic Materials (273 citations). T.P. Ma has collaborated with scholars based in United States, Japan and China. Frequent co-authors include Jin‐Ping Han, Weihang Zhu, Tatsuki Tamagawa, Xin Guo, Artur P. Balasinski, Taisuke Furukawa, Yasushiro Nishioka, M. Gibson, Xiaoxiong Wang and Richard C. Barker. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Journal of Applied Physics and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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T.P. Ma's Hit Papers

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