Th. Stauden

559 citations

27 papers · 508 · h-index 11

Impact in

Bioengineering top 5%
- Analytical Chemistry and Sensors
Electrical and Electronic Engineering top 10%
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 26
- Silicon Carbide Semiconductor Technologies 16
- Semiconductor materials and devices 12
- Gas Sensing Nanomaterials and Sensors 6
- Thin-Film Transistor Technologies 5
- Silicon and Solar Cell Technologies 4
Materials Chemistry 11
- ZnO doping and properties 8

Co-authors: V. Cimalla (17 shared papers)O. Ambacher (14 shared papers)J. Pezoldt (21 shared papers)Ch. Y. Wang (4 shared papers)Th. Kups (4 shared papers)G. Ecke (9 shared papers)G. Eichhorn (5 shared papers)H. Romanus (3 shared papers)
Journals: Applied Physics Letters (4 papers)Sensors and Actuators B Chemical (4 papers)Thin Solid Films (3 papers)Diamond and Related Materials (2 papers)physica status solidi (a) (1 paper)
Partner nations: Germany France United States

In The Last Decade

Th. Stauden

27 papers receiving 502 citations

Peers

Countries citing papers authored by Th. Stauden

Since Specialization

Citations

This map shows the geographic impact of Th. Stauden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Th. Stauden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Th. Stauden more than expected).

Fields of papers citing papers by Th. Stauden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Th. Stauden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Th. Stauden. The network helps show where Th. Stauden may publish in the future.

Co-authors

The 25 scholars most cited alongside Th. Stauden, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Th. Stauden Line = papers co-authored together Th. Stauden links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Phase selective growth and properties of rhombohedral and cubic indium oxide Applied Physics Letters ·Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, (unknown), V. Lebedev, J. Pezoldt, O. Ambacher	2006	89
2	Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes Applied Physics Letters ·Ch. Y. Wang, V. Cimalla, Th. Kups, C.‐C. Röhlig, Th. Stauden, O. Ambacher, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, K. Köhler, J. Wagner	2007	71
3	NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition Sensors and Actuators B Chemical ·Ch. Y. Wang, Muhammad Ali, Th. Kups, C.‐C. Röhlig, V. Cimalla, Th. Stauden, O. Ambacher	2007	60
4	NOx sensing properties of In2O3 thin films grown by MOCVD Sensors and Actuators B Chemical ·Muhammad Ali, Ch. Y. Wang, C.‐C. Röhlig, V. Cimalla, Th. Stauden, O. Ambacher	2007	50
5	Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy Applied Physics Letters ·V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, J. Pezoldt, S. Sloboshanin, J.A. Schaefer	1998	42
6	Ge-modified Si(100) substrates for the growth of 3C-SiC(100) Applied Physics Letters ·Ch. Zgheib, L. E. McNeil, P. Masri, Ch. Förster, Francisco M. Morales, Th. Stauden, O. Ambacher, J. Pezoldt	2006	25
7	Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition Journal of Applied Physics ·Ch. Y. Wang, V. Cimalla, Th. Kups, C.‐C. Röhlig, H. Romanus, V. Lebedev, J. Pezoldt, Th. Stauden, O. Ambacher	2007	23
8	Investigation of the nucleation and growth of SiC nanostructures on Si Thin Solid Films ·F. Scharmann, P. Maslarski, W. Attenberger, J.K.N. Lindner, B. Stritzker, Th. Stauden, J. Pezoldt	2000	20
9	Chemical conversion of Si to SiC by solid source MBE and RTCVD Diamond and Related Materials ·J. Pezoldt, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, F. Scharmann, D. Schipanski	1997	16
10	Influence of the heating ramp on the heteroepitaxial growth of SiC on Si Materials Science and Engineering B ·V. Cimalla, Th. Stauden, G. Eichhorn, J. Pezoldt	1999	15
11	The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Francisco M. Morales, Ch. Zgheib, Sergio I. Molina, D. Araújo, R. Garcı́a, C. Fernández, A. Sanz‐Hervás, P. Masri, Petia Weih, Th. Stauden, V. Cimalla, O. Ambacher, J. Pezoldt	2004	10
12	The deposition of aluminum nitride on silicon by plasma-enhanced metal-organic chemical vapour deposition Diamond and Related Materials ·Th. Stauden, G. Eichhorn, V. Cimalla, J. Pezoldt, G. Ecke	1996	10
13	In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces Thin Solid Films ·Ch. Förster, F. Schnabel, Petia Weih, Th. Stauden, O. Ambacher, J. Pezoldt	2004	10
14	SiC-based FET for detection of NOx and O2 using InSnOx as a gate material Sensors and Actuators B Chemical ·Muhammad Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, Peter Sandvik, O. Ambacher	2006	9
15	Rapid Thermal Annealing of Thin ZnO Films physica status solidi (a) ·O. Nennewitz, Heinz–Jürgen Schmidt, J. Pezoldt, Th. Stauden, Jens Schawohl, Lothar Spieß	1994	9
16	Linear alignment of SiC dots on silicon substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V. Cimalla, Alexander Schmidt, Th. Stauden, Konstantinos Zekentes, O. Ambacher, J. Pezoldt	2004	7
17	Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces Thin Solid Films ·T. Wöhner, V. Cimalla, Th. Stauden, J.A. Schaefer, J. Pezoldt	2000	7
18	Simulation of quality of SiC/Si interface during MBE deposition of C on Si Materialwissenschaft und Werkstofftechnik ·D. V. Kulikov, Alexander Schmidt, С. А. Королев, Francisco M. Morales, Th. Stauden, Yu. V. Trushin, J. Pezoldt	2006	6
19	Lateral alignment of SiC dots on Si Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·V. Cimalla, J. Pezoldt, Th. Stauden, Alexander Schmidt, Konstantinos Zekentes, O. Ambacher	2004	6
20	Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities Surface and Interface Analysis ·J. Pezoldt, Francisco M. Morales, Ch. Zgheib, Ch. Förster, Th. Stauden, G. Ecke, Chunhui Wang, P. Masri	2006	5

About Th. Stauden

Th. Stauden is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Ceramics and Composites and Bioengineering, having authored 27 papers that have together received 508 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (12 papers), ZnO doping and properties (8 papers), Gas Sensing Nanomaterials and Sensors (6 papers), Semiconductor materials and interfaces (5 papers), Thin-Film Transistor Technologies (5 papers), Silicon and Solar Cell Technologies (4 papers) and Advanced ceramic materials synthesis (3 papers). The work is most often cited by research in Bioengineering (93 citations), Electrical and Electronic Engineering (440 citations), Materials Chemistry (286 citations), Electronic, Optical and Magnetic Materials (93 citations) and Polymers and Plastics (66 citations). Th. Stauden has collaborated with scholars based in Germany, France and United States. Frequent co-authors include V. Cimalla, O. Ambacher, J. Pezoldt, Ch. Y. Wang, Th. Kups, G. Ecke, G. Eichhorn, H. Romanus, Muhammad Ali and J.A. Schaefer. Their work appears in journals such as Applied Physics Letters, Sensors and Actuators B Chemical, Thin Solid Films, Diamond and Related Materials and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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