T. Nasuno

457 citations
17 papers · 287 · h-index 10

Impact in

Papers in

Co-authors
Y. Noguchi (17 shared papers)M. Yasuhira (17 shared papers)Shoji Ikeda (17 shared papers)H. Honjo (17 shared papers)Tetsuo Endoh (16 shared papers)H. Sato (11 shared papers)Hideo Ohno (11 shared papers)Hiroki Koike (12 shared papers)
Journals
IEEE Transactions on Magnetics (3 papers)IEEE Journal of Solid-State Circuits (2 papers)AIP Advances (1 paper)IEEE Transactions on Electron Devices (1 paper)Symposium on VLSI Technology (1 paper)
Partner nations
Japan

In The Last Decade

T. Nasuno

17 papers receiving 277 citations

Peers

T. Nasuno
Comparison fields: 5 of 30
  • Atomic and Molecular Physics, and Optics 183
  • Hardware and Architecture 25
  • Condensed Matter Physics 43
  • Electrical and Electronic Engineering 189
  • Electronic, Optical and Magnetic Materials 59
Replace Y. Noguchi with:
Y. Noguchi Japan
S. Van Beek Belgium
M. Yasuhira Japan
Grégory Di Pendina France
Kuei‐Hung Shen Taiwan
Xiaoxuan Zhao China
W. Kim Belgium
Yushi Kato Japan
Denny D. Tang Taiwan
Jesmin Haq
T. Nasuno relative to Y. Noguchi Japan Y. Noguchi's profile →
Citations per field
00.5×1.5×
Y. Noguchi · 1×
Citations per year

Countries citing papers authored by T. Nasuno

Since Specialization
Citations

This map shows the geographic impact of T. Nasuno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Nasuno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Nasuno more than expected).

Fields of papers citing papers by T. Nasuno

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Nasuno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Nasuno. The network helps show where T. Nasuno may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Nasuno, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Nasuno Line = papers co-authored together T. Nasuno links everyone, so they are left out of the graph.

All Works

17 of 17 papers shown
#Work
1
14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process
H. Sato, H. Honjo, Takaya Watanabe, M. Niwa, Hiroki Koike, S. Miura, Takashi Saito, Hiroshi Inoue, T. Nasuno, T. Tanigawa, Y. Noguchi, T. Yoshiduka, M. Yasuhira, Shoji Ikeda, S.-Y. Kang, T. Kubo, Koji Yamashita, Yasushi Yagi, Ryo Tamura, Tetsuo Endoh
201845
2
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition
IEEE Journal of Solid-State Circuits ·Masanori Natsui, Akira Tamakoshi, H. Honjo, Toshinari Watanabe, T. Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
202042
3
A 47.14-$\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications
IEEE Journal of Solid-State Circuits ·Masanori Natsui, Y. Noguchi, M. Yasuhira, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, H. Honjo, Hiroki Koike, T. Nasuno, Yitao Ma, Takaho Tanigawa
201941
4
10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
H. Honjo, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, T. Endoh, H. Sato, Shoji Ikeda, Shūichi Satō, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira
201529
5
Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Hiroshi Inoue, M. Muraguchi, M. Niwa, Hideo Ohno, Tetsuo Endoh
201721
6
Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
IEEE Transactions on Magnetics ·H. Honjo, Shoji Ikeda, H. Sato, S. Sato, Takaya Watanabe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, Tetsuo Endoh
201620
7
12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz
Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, H. Honjo, Hiroki Koike, T. Nasuno, Yitao Ma, Takaho Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
201915
8
1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance
Hiroki Koike, S. Miura, H. Honjo, Watanabe Tosinari, H. Sato, Soshi Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, Takaho Tanigawa, M. Muraguchi, M. Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
201515
9
First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
IEEE Transactions on Electron Devices ·K. Nishioka, S. Miura, H. Honjo, Hiroshi Inoue, Takaya Watanabe, T. Nasuno, Hiroshi Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh
202113
10
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
Masanori Natsui, Akira Tamakoshi, H. Honjo, Takahiro Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, Hiroshi Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, H. Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu
202013
11
Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer
AIP Advances ·H. Honjo, Shoji Ikeda, H. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Keita Ito, Hideo Ohno, Tetsuo Endoh
20179
12
Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip
Hiroki Koike, S. Miura, H. Honjo, Toshinari Watanabe, H. Sato, Soshi Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, Takaho Tanigawa, M. Muraguchi, M. Niwa, Kenchi Ito, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh
20169
13
40 nm 1T–1MTJ 128 Mb STT-MRAM With Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design
IEEE Transactions on Magnetics ·Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Yoshiduka, Yitao Ma, H. Honjo, K. Nishioka, S. Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh
20205
14
Review of STT-MRAM circuit design strategies, and a 40-nm 1T-1MTJ 128Mb STT-MRAM design practice
Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Yoshiduka, Yitao Ma, H. Honjo, K. Nishioka, S. Miura, Hirofumi Inoue, Shoji Ikeda, Tetsuo Endoh
20205
15
Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm
Symposium on VLSI Technology ·Hiroshi Naganuma, S. Miura, H. Honjo, K. Nishioka, Takahito Watanabe, T. Nasuno, Hiroshi Inoue, T. V. A. Nguyen, Yasushi Endo, Y. Noguchi, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh
20212
16
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM
2022 International Electron Devices Meeting (IEDM) ·H. Honjo, K. Nishioka, S. Miura, Hiroshi Naganuma, Takaya Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, Hiroshi Inoue, M. Yasuhira, Shoji Ikeda, Tetsuo Endoh
20222
17
High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions
2018 IEEE International Magnetics Conference (INTERMAG) ·H. Honjo, Shoji Ikeda, Hiroshi Sato, K. Nishioka, Takeshi Watanabe, Satoshi Miura, T. Nasuno, Y. Noguchi, H. Inoue, M. Yasuhira, T. Tanigawa, Hiroki Koike, M. Muraguchi, M. Niwa, Hideo Ohno, Tetsuo Endoh
20181

About T. Nasuno

T. Nasuno is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Materials Chemistry, having authored 17 papers that have together received 287 indexed citations. Recurring topics across this work include Magnetic properties of thin films (14 papers), Magnetic Properties and Applications (7 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Advanced Memory and Neural Computing (7 papers), ZnO doping and properties (3 papers), Semiconductor materials and devices (3 papers), Quantum and electron transport phenomena (2 papers) and Physics of Superconductivity and Magnetism (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (183 citations), Hardware and Architecture (25 citations), Condensed Matter Physics (43 citations), Electrical and Electronic Engineering (189 citations) and Electronic, Optical and Magnetic Materials (59 citations). T. Nasuno has collaborated with scholars based in Japan. Frequent co-authors include Y. Noguchi, M. Yasuhira, Shoji Ikeda, H. Honjo, Tetsuo Endoh, H. Sato, Hideo Ohno, Hiroki Koike, M. Niwa and S. Miura. Their work appears in journals such as IEEE Transactions on Magnetics, IEEE Journal of Solid-State Circuits, AIP Advances, IEEE Transactions on Electron Devices and Symposium on VLSI Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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